Fairchild Semiconductor FQI6N90, FQB6N90 Datasheet

FQB6N90 / FQI6N90

900V N-Channel MOSFET

December 2000

QFET

QFET

QFETQFET

FQB6N90 / FQI6N90

TM

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize
on-state resistance, provide superior switching
performance, and withstand a high energy pulse in the
avalanche and commutation modes. These devices are
well suited for high efficiency switch mode power supplies.

D

G

S

D2-PAK

FQB Series

Absolute Maximum Ratings T

Symbol Parameter FQB6N90 / FQI6N90 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

, T

T

J

STG

T

L

Drain-Source Voltage 900 V
Drain Current

Drain Current - Pulsed
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TA = 25°C) *
Power Dissipation (T

Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

G

D

S

= 25°C unless otherwise noted

C

- Continuous (T

- Continuous (T

= 25°C)

C

- Derate above 25°C 1.34 W/°C

= 25°C)

C

= 100°C)

C

Features

• 5.8A, 900V, R

• Low gate charge ( typical 40 nC)

• Low Crss ( typical 17 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

I2-PAK

FQI Series

(Note 1)

(Note 2)
(Note 1)
(Note 1)
(Note 3)

= 1.9Ω @VGS = 10 V

DS(on)

G

5.8 A

3.7 A

23.2 A

712 mJ

5.8 A

16.7 mJ

4.0 V/ns

3.13 W
167 W

300 °C

D

!

!

"

"

"

"

!

!

"

!

!

"
"

"

!

!

S

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJC

R

θJA

R

θJA

* When mounted on the minimum pad size recommended (PCB Mount)

©2000 Fairchild Semiconductor International

Thermal Resistance, Junction-to-Case -- 0.75 °C/W
Thermal Resistance, Junction-to-Ambient * -- 40 °C/W
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

Rev. A2, December 2000

FQB6N90 / FQI6N90

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV
∆BV
/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage

DSS

Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 µA

V

GS

I

= 250 µA, Referenced to 25°C

D

V

= 900 V, VGS = 0 V

DS

V

= 720 V, TC = 125°C

DS

V

= 30 V, VDS = 0 V

GS

= -30 V, VDS = 0 V

V

GS

900 -- -- V

-- 0.96 -- V/°C

-- -- 10 µA

-- -- 100 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

V

= VGS, ID = 250 µA

DS

= 10 V , ID = 2.9 A

V

GS

= 50 V, ID = 2.9 A

V

DS

(Note 4)

3.0 -- 5.0 V

-- 1.5 1.9 Ω

-- 6.3 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 140 185 pF
Reverse Transfer Capacitance -- 17 23 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 1440 1880 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Turn-On Rise Time -- 80 170 ns
Turn-Off Delay Time -- 95 200 ns
Turn-Off Fall Time -- 55 120 ns
Total Gate Charge
Gate-Source Charge -- 8.5 -- nC
Gate-Drain Charge -- 20 -- nC

= 450 V, ID = 5.8 A,

V

DD

= 25 Ω

R

G

V

= 720 V, ID = 5.8 A,

DS

V

GS

= 10 V

(Note 4, 5)

(Note 4, 5)

-- 35 80 ns

-- 40 52 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 40mH, IAS = 5.8A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 5.8A, di/dt ≤ 200A/µs, V

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

©2000 Fairchild Semiconductor International

Maximum Continuous Drain-Source Diode Forward Current -- -- 5.8 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 23.2 A

= 0 V, IS = 5.8 A

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 4.3 -- µC

≤ BV

DD

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = 5.8 A,

V

GS

/ dt = 100 A/µs

dI

F

-- -- 1.4 V

-- 400 -- ns

(Note 4)

Rev. A2, December 2000

Typical Characteristics

FQB6N90 / FQI6N90

V

GS

Top : 15.0 V

1

10.0 V

10

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V
Bottom : 5.0 V

0

10

-1

, Drain Current [A]

10

D

I

-2

10

-1

10

0

10

※

Notes :

1. 250μs Pulse Test

℃

= 25

2. T

C

10

VDS, Drain-Source Voltage [V]

4

3

],

Ω

[

2

DS(ON)

R

1

VGS = 10V

VGS = 20V

Drain-Source On-Resistance

0

0 5 10 15 20

ID, Drain Current [A]

※

1

Note : T

1

10

0

10

℃

, Drain Current [A]

D

I

-1

10

150

℃

25

℃

-55

246810

V

, Gate-Source Voltage [V]

GS

※

Notes :

= 50V

1. V

DS

2. 250μs Pulse Test

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

1

10

℃

= 25

J

0

10

, Reverse Drain Current [A]

DR

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4

℃

150

℃

25

※

Notes :

1. V

2. 250

= 0V

GS

μ

s Pulse Test

VSD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

3000

2500

2000

1500

1000

Capacitance [pF]

500

0

-1

10

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Ch a ra ct eristics

©2000 Fairchild Semiconductor International

C
C
C

C

iss

C

oss

C

rss

0

10

VDS, Drain-Source Voltage [V]

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

oss

gd

= C

rss

gd

※

Notes :

= 0 V

1. V

GS

2. f = 1 M H z

1

10

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

VDS = 180V

VDS = 450V

VDS = 720V

※

= 5.8A

Note : I

D

Rev. A2, December 2000

12

10

8

6

4

2

, Gate-Source Voltage [V]

GS

V

0

0 5 10 15 20 25 30 35 40 45

QG, Total Gate Charge [nC]