Fairchild Semiconductor FQI11N40, FQB11N40 Datasheet
FQB11N40 / FQI11N40
400V N-Channel MOSFET
FQB11N40 / FQI11N40
November 2001
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
Features
• 11.4A, 400V, R
• Low gate charge ( typical 27 nC)
• Low Crss ( typical 20 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
= 0.48Ω @VGS = 10 V
DS(on)
suited for high efficiency switch mode power supply,
electronic lamp ballast based on half bridge.
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S
D
GS
D2-PAK
FQB Series
GSD
Absolute Maximum Ratings T
I2-PAK
FQI Series
= 25°C unless otherwise noted
C
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G
Symbol Parameter FQB11N40 / FQI11N40 Units
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
Drain-Source Voltage 400 V
Drain Current
- Continuous (T
- Continuous (T
Drain Current - Pulsed
= 25°C)
C
= 100°C)
C
(Note 1)
11.4 A
7.2 A
46 A
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (TA = 25°C) *
Power Dissipation (T
= 25°C)
C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
520 mJ
11.4 A
14.7 mJ
4.5 V
3.13 W
147 W
- Derate above 25°C 1.18 W/°C
, T
T
J
STG
T
L
Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
300 °C
Thermal Characteristics
Symbol Parameter Typ Max Units
R
θJC
R
θJA
R
θJA
* When mounted on the minimum pad size recommended (PCB Mount)
©2001 Fairchild Semiconductor Corporation
Thermal Resistance, Junction-to-Case -- 0.85 °C/W
Thermal Resistance, Junction-to-Ambient * -- 40 °C/W
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W
Rev. B, November 2001
FQB11N40 / FQI11N40
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
∆BV
/ ∆T
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
DSS
Breakdown Voltage Temperature
DSS
Coefficient
J
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
= 0 V, ID = 250 µA
V
GS
I
= 250 µA, Referenced to 25°C
D
V
= 400 V, VGS = 0 V
DS
V
= 320 V, TC = 125°C
DS
V
= 30 V, VDS = 0 V
GS
= -30 V, VDS = 0 V
V
GS
400 -- -- V
-- 0.42 -- V/°C
-- -- 1 µA
-- -- 10 µA
-- -- 100 nA
-- -- -100 nA
On Characteristics
V
R
g
FS
GS(th)
DS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
= VGS, ID = 250 µA
DS
= 10 V, ID = 5.7 A
V
GS
= 50 V, ID = 5.7 A
V
DS
(Note 4)
3.0 -- 5.0 V
-- 0.38 0.48 Ω
-- 7.6 -- S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance -- 180 240 pF
V
= 25 V, VGS = 0 V,
DS
f = 1.0 MHz
Reverse Transfer Capacitance -- 20 30 pF
-- 1100 1400 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Turn-On Rise Time -- 100 210 ns
= 200 V, ID = 11.4 A,
V
DD
R
= 25 Ω
G
-- 30 70 ns
Turn-Off Delay Time -- 60 130 ns
Turn-Off Fall Time -- 60 130 ns
Total Gate Charge
Gate-Source Charge -- 7.3 -- nC
V
= 320 V, ID = 11.4 A,
DS
V
= 10 V
GS
Gate-Drain Charge -- 12.3 -- nC
(Note 4, 5)
-- 27 35 nC
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 7mH, IAS = 11.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 11.4A, di/dt ≤ 200A/µs, VDD ≤ BV
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2001 Fairchild Semiconductor Corporation
Maximum Continuous Drain-Source Diode Forward Current -- -- 11.4 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 46 A
= 0 V, IS = 11.4 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 1.8 -- µC
Starting TJ = 25°C
DSS,
V
GS
= 0 V, IS = 11.4 A,
V
GS
/ dt = 100 A/µs
dI
F
-- -- 1.5 V
-- 240 -- ns
(Note 4)
Rev. B, November 2001
Typical Characteristics
FQB11N40 / FQI11N40
V
GS
Top : 15 V
10 V
8.0 V
7.0 V
1
6.5 V
10
6.0 V
Botto m : 5.5 V
0
10
, Dra in C u rre n t [A ]
D
I
※
Note s :
1. 250μs Pulse Test
-1
10
-1
10
0
10
2. T
VDS , Drain-Source Voltage [V]
Figure 1. On-Region Char act er i stic s
1.6
1.4
1.2
],
1.0
Ω
[
0.8
DS(on)
R
0.6
0.4
Drain-Source On-Resistance
0.2
0.0
0 5 10 15 20 25 30 35 40
VGS = 10V
VGS = 20V
※
ID , Drain Current [A]
= 25
C
Note : T
1
10
0
10
, Dra in C u rre n t [A ]
D
I
℃
1
10
-1
10
246810
℃
150
℃
25
VGS , G ate -Sou rce V o lta g e [V ]
℃
-55
※
Note s :
1. V
= 40V
DS
2. 250μs Pulse Tes t
Figure 2. Transfer Characteristics
1
10
0
10
, Reverse Drain Current [A]
DR
I
℃
= 25
J
10
℃
150
-1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
℃
25
※
Note s :
= 0V
1. V
GS
2. 250μs Pulse Test
VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variati on vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
2400
1800
1200
Capacitance [pF]
600
0
-1
10
VDS, Drain-Source Voltage [V]
C
= Cgs + Cgd (Cds = shorted)
iss
C
= Cds + C
oss
gd
C
= C
rss
gd
C
iss
C
oss
※
Note s :
1. V
= 0 V
GS
10
2. f = 1 MHz
1
C
rss
0
10
12
10
8
6
4
, Gate-Source Voltage [V]
2
GS
V
0
0 5 10 15 20 25 30
QG, Tota l Gate Charge [n C]
VDS = 80V
VDS = 200V
VDS = 320V
※
Note : I
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Ch a ra ct eristics
= 11.4 A
D
Rev. B, November 2001©2001 Fairchild Semiconductor Corporation
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