Fairchild Semiconductor FQG4902 Datasheet

FQG4902

250V Dual N & P-Channel MOSFET

FQG4902

TM

QFET

General Description

These dual N and P-channel enhancement mode power
field effect transistors are produced using Fairchild’s
proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for electronic lamp ballast based on half bridge.

D2

D2

D1

D1

G2

S2

G1

S1

8-DIP

Pin #1

Features

• N-Channel 0.54A, 250V, R
P-Channel -0.54A, -250V, R

• Low gate charge ( typical N-Channel 6.0 nC)
( typical P-Channel 12.0 nC)

• Fast switching

• Improved dv/dt capability

5

6

7

8

= 2.0 Ω @ VGS = 10 V

DS(on)

= 2.0 Ω @ VGS = -10 V

DS(on)

4

3

2

1

Absolute Maximum Ratings T

Symbol Parameter N-Channel P-Channel Units

V

DSS

I

D

I

DM

V

GSS

dv/dt Peak Diode Recovery dv/dt
P

D

T

, T

J

STG

Drain-Source Voltage 250 -250 V
Drain Current

Drain Curent - Pulsed
Gate-Source Voltage ± 30 V

Power Dissipation (TA = 25°C)

- Derate above 25°C 0.011 W/°C
Operating and Storage Temperature Range -55 to +150 °C

- Continuous (T

- Continuous (T

= 25°C unless otherwise noted

A

= 25°C)

A

= 100°C)

A

(Note 1)

(Note 2)

0.54 -0.54 A

0.34 -0.34 A

4.32 -4.32 A

5.5 -5.5 V/ns

1.4 W

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJA

©2002 Fairchild Semiconductor Corporation Rev. A1, April 2002

Thermal Resistance, Junction-to-Ambient

(Note 5a)

-- 90 °C/W

FQG4902

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Type Min Typ Max Units

Off Characteristics

BV

∆BV
/ ∆T

I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA

DSS

V

= 0 V, ID = -250 µA

GS

Breakdown Voltage Temperature

DSS

Coefficient

J

ID = 250 µA,
Referenced to 25°C
I

= -250 µA,

D

Referenced to 25°C

Zero Gate Voltage Drain Current VDS = 250 V, VGS = 0 V

V

= 200 V, TA = 125°C

DS

V

= -250 V, VGS = 0 V

DS

= -200 V, TA = 125°C

V

DS

= 30 V, VDS = 0 V

Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse

V

GS

= -30 V, VDS = 0 V

V

GS

N-Ch 250 -- -- V
P-Ch -250 -- -- V

N-Ch -- 0.24 -- V/°C

P-Ch -- -0.2 -- V/°C

N-Ch

P-Ch

-- -- 10 µA

-- -- 100 µA

-- -- -10 µA

-- -- -100 µA
All -- -- 100 nA
All -- -- -100 nA

On Characteristics

V

R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage VDS = VGS, ID = 250 µA

V

= VGS, ID = -250 µA

DS

Static Drain-Source On-Resistance VGS = 10 V, ID = 0.27 A

V

= -10 V, ID = -0.27 A

GS

Forward Transconductance VDS = 40 V, ID = 0.27 A

= -40 V, ID = -0.27 A

V

DS

N-Ch 2.0 -- 4.0 V
P-Ch -2.0 -- -4.0 V
N-Ch -- 1.1 2.0 Ω
P-Ch -- 1.5 2.0 Ω
N-Ch -- 1.3 -- S
P-Ch -- 1.1 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance

Output Capacitance N-Ch -- 40 55 pF

Reverse Transfer Capacitance N-Ch -- 7 9. 5 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

Q

Q

g

gs

gd

Turn-On Delay Time

Turn-On Rise Time N-Ch -- 17 45 ns

Turn-Off Delay Time N-Ch -- 29 70 ns

Turn-Off Fall Time N-Ch -- 23 55 ns

Total Gate Charge N-Channel

Gate-Source Charge N-Ch -- 1.1 -- nC

Gate-Drain Charge N-Ch -- 2.7 -- nC

N-Channel
V

= 25 V, VGS = 0 V,

DS

f = 1.0 MHz
P-Channel

= -25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

N-Channel

= 125 V, ID = 0.54 A,

V

DD

= 25 Ω

R

G

P-Channel
V

= -125 V, ID = -0.54 A,

DD

= 25 Ω

R

G

(Note 3,4)

= 200 V, ID = 0.54 A,

V

DS

V

= 10 V

GS

P-Channel
V

= -200 V, ID = -0.54 A,

DS

V

GS

= -10 V

(Note 3,4)

N-Ch -- 195 250 pF
P-Ch -- 345 445 pF

P-Ch -- 65 85 pF

P-Ch -- 11 14.5 pF

N-Ch -- 5.5 20 ns
P-Ch -- 8.0 25 ns

P-Ch -- 19 50 ns

P-Ch -- 44 100 ns

P-Ch -- 33 75 ns
N-Ch -- 6.0 7.8 nC
P-Ch -- 12.0 15.6 nC

P-Ch -- 2.2 -- nC

P-Ch -- 5.3 -- nC

©2002 Fairchild Semiconductor Corporation

Rev. A1, April 2002

FQG4902

Electrical Characteristics

(Continued)

Symbol Parameter Test Conditions Type Min Typ Max Units

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. ISD ≤ 0.54A, di/dt ≤ 200A/µs, VDD ≤ BV

3. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

4. Essentially independent of operating temperature

5. R
Maximum R
a. 90°C/W when mounted without any pad copper
b. 62.5°C/W when mounted on a 4.5 in2 pad of 2oz copper. In such an environment, the power dissipation can be enhanced up to 2W

Maximum Continuous Drain-Source Diode Forward Current N-Ch -- -- 0.54 A

P-Ch -- -- -0.54 A

Maximum Pulsed Drain-Source Diode Forward Current N-Ch -- -- 4.32 A

P-Ch -- -- -4.32 A

Drain-Source Diode Forward Voltage VGS = 0 V , IS = 0.54 A

V

= 0 V , IS = -0.54 A

GS

= 0 V , IS = 0.54 A,

Reverse Recovery Time
Reverse Recovery Charge -- 189 -- nC
Reverse Recovery Time
Reverse Recovery Charge -- 210 -- nC

Starting TJ = 25°C

DSS,

is the sum of the junction-to-case and case-to-ambient thermal resistance. R

JA

θ

using the different board layouts on 3”x4.5” FR-4 PCB in a still air environment :

JA

θ

V

GS

dI

/ dt = 100 A/µs

F

= 0 V , IS = -0.54 A,

V

GS

/ dt = 100 A/µs

dI

F

θ

(Note 3)

(Note 3)

is determined by the user’s board design

CA

N-Ch -- -- 1.5 V
P-Ch -- -- -5.0 V

N-Ch

P-Ch

-- 90 -- ns

-- 77 -- ns

©2002 Fairchild Semiconductor Corporation

Rev. A1, April 2002

Typical Characteristics : N-Channel

FQG4902

V

GS

Top : 15 .0 V

10.0 V

8.0 V

6.0 V

5.5 V

5.0 V

0

4.5 V

10

Bottom : 4.0 V

, Drain Current [A]

D

I

-1

10

-1

10

0

10

!

Notes :

1. 250#s Pulse Test

"

2. TA = 25

1

10

VDS, Drain-Source Voltage [V]

Figure 1. On-Region Char act er i stic s

10

8

6

],

$

[

4

DS(ON)

R

2

Drain-Source On-Resistance

0

0246810

VGS = 10V

VGS = 20V

ID, Drain Current [A]

!

Note : T

"

= 25

J

0

10

, Drain Current [A]

D

I

-1

10

0246810

"

150

"

25

"

-55

!

Note s :

= 40V

1. V

DS

2. 250#s Pulse Test

VGS , Gate-Source Voltage [V]

Figure 2. Transfer Characteristics

0

10

"

, Reverse Drain Current [A]

DR

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4

150

"

25

!

Note s :

1. V

= 0V

GS

2. 250#s Pulse Test

VSD, Sou rce -Drain vo lta ge [V ]

Figure 3. On-Resistance Variati on vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

VDS = 50V
VDS = 125V
VDS = 200V

!

Note : I

= 0.54 A

D

400

300

200

Capacitance [pF]

100

0

-1

10

C

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

C

oss

gd

C

= C

rss

gd

C

iss

C

oss

C

rss

0

10

!

Note s :

= 0 V

1. V

GS

2. f = 1 MHz

1

10

VDS, Drain-Source Voltage [V]

12

10

8

6

4

, Gate-Source Voltage [V]

GS

2

V

0

02468

QG, Tota l G ate C h arg e [nC]

Figure 5. Capacitance C haracteristics Figure 6. Ga te Ch arge Characteristics

©2002 Fairchild Semiconductor Corporation Rev. A1, April 2002