Fairchild Semiconductor FQU7N10L, FQD7N10L Datasheet
FQD7N10L / FQU7N10L
100V LOGIC N-Channel MOSFET
December 2000
QFET
QFET
QFETQFET
FQD7N10L / FQU7N10L
TM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize
on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation modes. These devices are
well suited for low voltage applications such as high
efficiency switching DC/DC converters, and DC motor
control.
D
S
D-PAK
= 25°C)
C
G
D
S
= 25°C unless otherwise noted
C
= 25°C)
C
= 100°C)
C
FQD Series
- Continuous (T
- Continuous (T
- Derate above 25°C 0.2 W/°C
G
Absolute Maximum Ratings T
Symbol Parameter FQD7N10L / FQU7N10L Units
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
, T
T
J
STG
T
L
Drain-Source Voltage 100 V
Drain Current
Drain Current - Pulsed
Gate-Source Voltage ± 20 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (TA = 25°C) *
Power Dissipation (T
Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Features
• 5.8A, 100V, R
• Low gate charge ( typical 4.6 nC)
• Low Crss ( typical 12 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low level gate drive requirments allowing
direct operation from logic drives
I-PAK
FQU Series
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
= 0.35Ω @VGS = 10 V
DS(on)
!
!
G
5.8 A
3.67 A
23.2 A
50 mJ
5.8 A
2.5 mJ
6.0 V/ns
2.5 W
25 W
300 °C
!
!
D
!
!
"
"
"
"
"
"
"
"
!
!
S
Thermal Characteristics
Symbol Parameter Typ Max Units
R
θJC
R
θJA
R
θJA
* When mounted on the minimum pad size recommended (PCB Mount)
©2000 Fairchild Semiconductor International
Thermal Resistance, Junction-to-Case -- 5.0 °C/W
Thermal Resistance, Junction-to-Ambient * -- 50 °C/W
Thermal Resistance, Junction-to-Ambient -- 110 °C/W
Rev. A2, December 2000
FQD7N10L / FQU7N10L
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter T e s t Conditions Min Typ Max Units
Off Characteristics
BV
∆BV
/ ∆T
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
DSS
Breakdown Voltage Temperature
DSS
Coefficient
J
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
= 0 V, ID = 250 µA
V
GS
I
= 250 µA, Referenced to 25°C
D
V
= 100 V, VGS = 0 V
DS
V
= 80 V, TC = 125°C
DS
V
= 20 V, VDS = 0 V
GS
= -20 V, VDS = 0 V
V
GS
100 -- -- V
-- 0.1 -- V/°C
-- -- 1 µA
-- -- 10 µA
-- -- 100 nA
-- -- -100 nA
On Characteristics
V
R
g
FS
GS(th)
DS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
= VGS, ID = 250 µA
DS
V
= 10 V, ID = 2.9 A
GS
= 5 V, ID = 2.9 A
V
GS
V
= 30 V, ID = 2.9 A
DS
(Note 4)
1.0 -- 2.0 V
0.275
--
0.300
0.35
0.38
-- 4.6 -- S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance -- 55 72 pF
Reverse Transfer Capacitance -- 12 15 pF
= 25 V, VGS = 0 V,
V
DS
f = 1.0 MHz
-- 220 290 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Turn-On Rise Time -- 100 210 ns
Turn-Off Delay Time -- 17 45 ns
Turn-Off Fall Time -- 50 110 ns
Total Gate Charge
Gate-Source Charge -- 1.0 -- nC
Gate-Drain Charge -- 2.6 -- nC
= 50 V, ID = 7.3 A,
V
DD
= 25 Ω
R
G
= 80 V, ID = 7.3 A,
V
DS
V
GS
= 5 V
(Note 4, 5)
(Note 4, 5)
-- 9 30 ns
-- 4.6 6.0 nC
Ω
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 2.23mH, IAS = 5.8A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 7.3A, di/dt ≤ 300A/µs, VDD ≤ BV
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2000 Fairchild Semiconductor International
Maximum Continuous Drain-Source Diode Forward Current -- -- 5.8 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 23.2 A
= 0 V, IS = 5.8 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 140 -- nC
Starting TJ = 25°C
DSS,
V
GS
= 0 V, IS = 7.3 A,
V
GS
/ dt = 100 A/µs
dI
F
-- -- 1.5 V
-- 70 -- ns
(Note 4)
Rev. A2, December 2000
Typical Characteristics
FQD7N10L / FQU7N10L
V
GS
Top : 10.0 V
8.0 V
1
10
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V
0
10
, Drain Current [A]
D
I
-1
10
-1
10
0
10
※
1. 250μs Pulse Test
2. T
VDS, Drain-Source Voltage [V]
1.5
1.2
0.9
],
Ω
[
0.6
DS(ON)
R
0.3
VGS = 5V
VGS = 10V
Drain-Source On-Resistance
0.0
0 5 10 15 20
ID, Drain Current [A]
Notes :
※
= 25
C
10
Note : T
1
10
℃
150
℃
1
0
10
℃
25
, Dra in Cu rrent [A]
D
I
-1
10
0246810
℃
-55
※
Notes :
1. V
= 30V
DS
2. 250μs Pulse Test
VGS , Gate - Source Voltage [V]
Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s
1
10
℃
= 25
J
0
10
℃
150
℃
, Reverse Drain Current [A]
DR
I
-1
10
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
25
※
Notes :
1. V
= 0V
GS
2. 250μs Pulse Test
VSD , So u rce-Dra in Volta ge [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
VDS = 50V
VDS = 80V
※
Note : I
600
500
400
300
200
Capacitance [pF]
100
0
-1
10
C
= Cgs + Cgd (Cds = shorted)
iss
= Cds + C
C
oss
gd
C
= C
rss
gd
※
10
1
Notes :
= 0 V
1. V
GS
2. f = 1 MH z
C
iss
C
oss
C
rss
0
10
VDS, Drain-Source Voltage [V]
12
10
8
6
4
, Gate-Source Voltage [V]
2
GS
V
0
012345678
QG, Tota l Gate Charge [n C]
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Ch a ra ct eristics
= 7.3 A
D
Rev. A2, December 2000©2000 Fairchild Semiconductor International
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