Fairchild Semiconductor FQD5P10 Datasheet

FQD5P10 / FQU5P10

100V P-Channel MOSFET

FQD5P10 / FQU5P10

TM

QFET

General Description

These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well

Features

• -3.6A, -100V, R

• Low gate charge ( typical 6.3 nC)

• Low Crss ( typical 18 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

= 1.05Ω @VGS = -10 V

DS(on)

suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.

D

GS

D

D-PAK

FQD Series

GSD

I-PAK

FQU Series

G

S

Absolute Maximum Ratings T

= 25°C unless otherwise noted

C

Symbol Parameter FQD5P10 / FQU5P10 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

Drain-Source Voltage -100 V
Drain Current

- Continuous (T

- Continuous (T

Drain Current - Pulsed

= 25°C)

C

= 100°C)

C

(Note 1)

-3.6 A

-2.28 A

-14.4 A
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TA = 25°C) *
Power Dissipation (T

= 25°C)

C

(Note 2)
(Note 1)
(Note 1)
(Note 3)

55 mJ

-3.6 A

2.5 mJ

-6.0 V/ns

2.5 W
25 W

- Derate above 25°C 0.2 W/°C

, T

T

J

STG

T

L

Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJC

R

θJA

R

θJA

* When mounted on the minimum pad size recommended (PCB Mount)

©2002 Fairchild Semiconductor Corporation

Thermal Resistance, Junction-to-Case -- 5.0 °C/W
Thermal Resistance, Junction-to-Ambient * -- 50 °C/W
Thermal Resistance, Junction-to-Ambient -- 110 °C/W

Rev. B, August 2002

FQD5P10 / FQU5P10

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Te st Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = -250 µA

V

GS

I

= -250 µA, Referenced to 25°C

D

V

= -100 V, VGS = 0 V

DS

V

= -80 V, TC = 125°C

DS

V

= -30 V, VDS = 0 V

GS

= 30 V, VDS = 0 V

V

GS

-100 -- -- V

-- -0.1 -- V/°C

-- -- -1 µA

-- -- -10 µA

-- -- -100 nA

-- -- 100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

V

= VGS, ID = -250 µA

DS

= -10 V, ID = -1.8 A

V

GS

= -40 V, ID = -1.8 A

V

DS

(Note 4)

-2.0 -- -4.0 V

-- 0.82 1.05 Ω

-- 2.3 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 70 90 pF
Reverse Transfer Capacitance -- 18 25 pF

= -25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 190 250 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Turn-On Rise Time -- 70 150 ns
Turn-Off Delay Time -- 12 35 ns
Turn-Off Fall Time -- 30 70 n s
Total Gate Charge
Gate-Source Charge -- 1.7 -- nC
Gate-Drain Charge -- 3.0 -- nC

= -50 V, ID = -4.5 A,

V

DD

= 25 Ω

R

G

V

= -80 V, ID = -4.5 A,

DS

V

GS

= -10 V

(Note 4, 5)

(Note 4, 5)

-- 9 30 ns

-- 6.3 8.2 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 6.4mH, IAS = -3.6A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ -4.5A, di/dt ≤ 300A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

©2002 Fairchild Semiconductor Corporation

Maximum Continuous Drain-Source Diode Forward Current -- -- -3.6 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- -14.4 A

= 0 V, IS = -3.6 A

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 0.27 -- µC

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = -4.5 A,

V

GS

/ dt = 100 A/µs

dI

F

-- -- -4.0 V

-- 85 -- ns

(Note 4)

Rev. B, August 2002

Typical Characteristics

FQD5P10 / FQU5P10

1

V
Top : -15.0 V

-10.0 V

-8.0 V

-7.0 V

-6.5 V

-5.5 V

0

-5.0 V
Botto m : -4.5 V

-1

-2

-1

10

GS

※

Note :

1. 250μs Pulse Test

℃

= 25

2. T

C

0

10

1

10

10

10

10

, Drain Current [A]

D

-I

10

-VDS, Drain-Source Voltage [V]

VGS = - 10V

VGS = - 20V

※

℃

Note : T

= 25

J

2.5

2.0

],

Ω

1.5

[

DS(on)

R

1.0

Drain-Source On-Resistance

0.5

0.0
036912

-ID , Drai n Curren t [A]

1

10

℃

150

0

10

℃

, Drain Current [A]

D

-I

25

※

℃

-55

-1

10

246810

Notes :

1. V

= -40V

DS

2. 250μs Pulse Test

-VGS , Gate-Source Voltage [V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

1

10

0

10

℃

℃

25

, Reve rs e D ra in Current [A ]

DR

-I

-1

10

0.0 0.5 1.0 1.5 2.0 2.5 3.0

150

※

Notes :

= 0V

1. V

GS

2. 250μs Pulse Test

-VSD , Source-Drain Voltage [V]

Figure 3. On-Resistance Variati on vs.

Drain Current and Gate Voltage

500

450

400

350

300

250

200

150

Capacitance [pF]

100

50

0

-1

10

Figure 5. Capacitance C haracteristics Figure 6. Gate Charge Characteristics

©2002 Fairchild Semiconductor Corporation

C

iss

C

oss

C

C

oss

C

iss

C

rss

0

10

rss

-VDS, Drain-Source Voltage [V]

= Cgs + Cgd (Cds = shorted)

= Cds + C

gd

= C

gd

※

Notes :

= 0 V

1. V

GS

2. f = 1 MH z

1

10

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

VDS = -50V

VDS = -80V

VDS = -20V

※

Note : I

= -4.5 A

D

Rev. B, August 2002

12

10

8

6

4

, Gate-Source Voltage [V]

GS

2

-V

0

012345678

QG, Tota l Gate Charge [n C]