Fairchild Semiconductor FQU5N20L, FQD5N20L Datasheet

FQD5N20L / FQU5N20L

200V LOGIC N-Channel MOSFET

December 2000

QFET

QFET

QFETQFET

FQD5N20L / FQU5N20L

TM

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize
on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation modes. These devices are
well suited for high efficiency switching DC/DC conv erte rs,
switch mode power supplies, and motor control.

D

S

D-PAK

= 25°C)

C

G

D

S

= 25°C unless otherwise noted

C

= 25°C)

C

= 100°C)

C

FQD Series

- Continuous (T

- Continuous (T

- Derate above 25°C 0.29 W/°C

G

Absolute Maximum Ratings T

Symbol Parameter FQD5N20L / FQU5N20L Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

, T

T

J

STG

T

L

Drain-Source Voltage 200 V
Drain Current

Drain Current - Pulsed
Gate-Source Voltage ± 20 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TA = 25°C) *
Power Dissipation (T

Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

Features

• 3.8A, 200V, R

• Low gate charge ( typical 4.8 nC)

• Low Crss ( typical 6.0 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• Low level gate drive requirement allowing direct
operation from logic drivers

I-PAK

FQU Series

(Note 1)

(Note 2)
(Note 1)
(Note 1)
(Note 3)

= 1.2Ω @VGS = 10 V

DS(on)

!

!

G

3.8 A

2.4 A

15.2 A

60 mJ

3.8 A

3.7 mJ

5.5 V/ns

2.5 W
37 W

300 °C

!

!

D

!

!

"

"

"

"

"

"
"

"

!

!

S

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJC

R

θJA

R

θJA

* When mounted on the minimum pad size recommended (PCB Mount)

©2000 Fairchild Semiconductor International

Thermal Resistance, Junction-to-Case -- 3.4 °C/W
Thermal Resistance, Junction-to-Ambient * -- 50 °C/W
Thermal Resistance, Junction-to-Ambient -- 110 °C/W

Rev. A2, December 2000

FQD5N20L / FQU5N20L

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter T e s t Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 µA

V

GS

I

= 250 µA, Referenced to 25°C

D

V

= 200 V, VGS = 0 V

DS

V

= 160 V, TC = 125°C

DS

V

= 20 V, VDS = 0 V

GS

= -20 V, VDS = 0 V

V

GS

200 -- -- V

-- 0.18 -- V/°C

-- -- 1 µA

-- -- 10 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

V

= VGS, ID = 250 µA

DS

V

= 10 V, ID = 1.9 A

GS

= 5 V, ID = 1.9 A

V

GS

V

= 30 V, ID = 1.9 A

DS

(Note 4)

1.0 -- 2.0 V

0.94

--

0.98

1.2

1.25

-- 3.35 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 40 50 pF
Reverse Transfer Capacitance -- 6 8 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 250 325 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Turn-On Rise Time -- 90 190 ns
Turn-Off Delay Time -- 15 40 ns
Turn-Off Fall Time -- 50 110 ns
Total Gate Charge
Gate-Source Charge -- 1.2 -- nC
Gate-Drain Charge -- 2.4 -- nC

= 100 V, ID = 4.5 A,

V

DD

= 25 Ω

R

G

= 160 V, ID = 4.5 A,

V

DS

V

GS

= 5 V

(Note 4, 5)

(Note 4, 5)

-- 9 25 ns

-- 4.8 6.2 nC

Ω

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 6.2mH, IAS = 3.8A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 4.5A, di/dt ≤ 300A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

©2000 Fairchild Semiconductor International

Maximum Continuous Drain-Source Diode Forward Current -- -- 3.8 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 15.2 A

= 0 V, IS = 3.8 A

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 0.3 -- µC

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = 4.5 A,

V

GS

/ dt = 100 A/µs

dI

F

(Note 4)

-- -- 1.5 V

-- 95 -- ns

Rev. A2, December 2000

Typical Characteristics

FQD5N20L / FQU5N20L

V

GS

1

10

Top : 10 V

8.0 V

6.0 V

5.0 V

4.5 V

4.0 V

3.5 V
Botto m : 3.0 V

0

10

, Drain Current [A]

D

I

-1

10

-1

10

0

10

※

Notes :

1. 250μs Pulse Test

℃

2. T

= 25

C

1

10

VDS, Drain-Source Voltage [V]

8

6

],

4

Ω

[

DS(ON)

R

2

Drain-Source On-Resistance

0

0246810

VGS = 5V

VGS = 10V

※

Note : T

℃

= 25

J

ID, Dra in Current [A]

1

10

℃

150

0

10

℃

25

, Dra in Curre n t [A]

D

I

-1

10

0246810

℃

-55

※

Notes :

1. V

= 30V

DS

2. 250μs Pulse Test

VGS , Gate -Source Voltag e [V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

1

10

0

10

, Reverse Drain Current [A]

DR

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

℃

℃

150

25

※

Notes :

1. V

= 0V

GS

2. 250μs Pulse Te st

VSD , So u r c e-Drai n V oltage [V]

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

500

400

300

200

Capacitance [pF]

100

0

-1

10

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Ch a ra ct eristics

©2000 Fairchild Semiconductor International

C
C
C

C

iss

C

oss

C

rss

0

10

VDS, Drain-Source Voltage [V]

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

oss

gd

= C

rss

gd

※

Notes :

1. V

GS

2. f = 1 MH z

1

10

= 0 V

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

VDS = 40V

※

Note : I

= 4.5 A

D

Rev. A2, December 2000

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0246810

VDS = 100V

VDS = 160V

QG, Tota l Gate Charge [n C]