Fairchild Semiconductor FQD2N100 Datasheet

FQD2N100/FQU2N100

1000V N-Channel MOSFET

FQD2N100/FQU2N100

February 2002

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well

Features

• 1.6A, 1000V, R

• Low gate charge ( typical 12 nC)

• Low Crss ( typical 5 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

= 9Ω @VGS = 10 V

DS(on)

suited for electronic lamp starter and ballast.

D

GS

D-PAK

FQD Series

GSD

Absolute Maximum Ratings T

I-PAK

FQU Series

= 25°C unless otherwise noted

C

!!!!

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G

D

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S

Symbol Parameter FQD2N100/FQU2N100 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

Drain-Source Voltage 1000 V
Drain Current

- Continuous (T

- Continuous (T

Drain Current - Pulsed

= 25°C)

C

= 100°C)

C

(Note 1)

1.6 A

1.0 A

6.4 A
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TA = 25°C) *
Power Dissipation (T

= 25°C)

C

(Note 2)
(Note 1)
(Note 1)
(Note 3)

160 mJ

1.6 A

5.0 mJ

5.5 V/ns

2.5 W

50 W

- Derate above 25°C 0.4 W/°C

, T

T

J

STG

T

L

Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJC

R

θJA

R

θJA

* When mounted on the minimum pad size recommended (PCB Mount)

©2002 Fairchild Semiconductor Corporation

Thermal Resistance, Junction-to-Case -- 2.5 °C/W
Thermal Resistance, Junction-to-Ambient * -- 50 °C/W
Thermal Resistance, Junction-to-Ambient -- 110 °C/W

Rev. A, February 2002

FQD2N100/FQU2N100

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Te st Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 µA

V

GS

I

= 250 µA, Referenced to 25°C

D

V

= 1000 V, VGS = 0 V

DS

V

= 800 V, TC = 125°C

DS

V

= 30 V, VDS = 0 V

GS

= -30 V, VDS = 0 V

V

GS

1000 -- -- V

-- 0.976 -- V/°C

-- -- 10 µA

-- -- 100 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

V

= VGS, ID = 250 µA

DS

= 10 V, ID = 0.8 A

V

GS

= 50 V, ID = 0.8 A

V

DS

(Note 4)

3.0 -- 5.0 V

-- 7.1 9 Ω

-- 1.9 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 40 52 pF
Reverse Transfer Capacitance -- 5 6.5 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 400 520 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

Turn-On Delay Time
Turn-On Rise Time -- 30 70 ns
Turn-Off Delay Time -- 25 60 ns
Turn-Off Fall Time -- 35 80 ns

g
gs
gd

Total Gate Charge
Gate-Source Charge -- 2.5 -- nC
Gate-Drain Charge -- 6.5 -- nC

= 500 V, ID = 2.0 A,

V

DD

R

= 25 Ω

G

= 800 V, ID = 2.0 A,

V

DS

V

GS

= 10 V

-- 13 35 ns

(Note 4, 5)

-- 12 15.5 nC

(Note 4, 5)

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 120mH, IAS = 1.6A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 2.0A, di/dt ≤ 300A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

©2002 Fairchild Semiconductor Corporation

Maximum Continuous Drain-Source Diode Forward Current -- -- 1.5 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 6.0 A

= 0 V, IS = 1.6 A

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 2.3 -- µC

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = 2.0 A,

V

GS

/ dt = 100 A/µs

dI

F

-- -- 1.4 V

-- 520 -- ns

(Note 4)

Rev. A, February 2002

Typical Characteristics

FQD2N100/FQU2N100

V

GS

Top : 1 5 .0 V

10.0 V

8.0 V

7.0 V

6.5 V

0

6.0 V

10

Bottom : 5.5 V

-1

10

, Dra in C u rre n t [A ]

D

I

※

Notes :

µ

1. 250

s Pulse Test

℃

2. T

= 25

-2

10

-1

10

0

10

C

1

10

VDS, Drain-Source Voltage [V]

VGS = 10V

VGS = 20V

※

℃

Note : T

= 25

J

20

15

]

Ω

, [

10

DS(on)

R

5

Drain-Source On-Resistance

0

01234

ID , Drai n Curren t [A]

℃

0

10

, Dra in C u rre nt [A ]

D

I

-1

10

246810

150

℃

25

℃

-55

※

Note s :

= 50V

1. V

DS

µs Pulse T est

2. 250

VGS , Ga te- S ou rc e V o ltag e [V ]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

0

10

, Reverse Drain Current [A]

DR

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4

℃

150

℃

25

※

Note s :

1. V

2. 250

= 0V

GS

µs Pulse T est

VSD , Sou rc e -D ra in V o ltag e [V ]

Figure 3. On-Resistance Variati on vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current and

Temperature

VDS = 200V
VDS = 500V

VDS = 1000V

※

Note : I

700

600

500

400

300

Capacitance [pF]

200

100

0

-1

10

VDS, Drain-Source Voltage [V]

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

gd

C

= C

rss

10

gd

1

※

Note s :

1. V

= 0 V

GS

2. f = 1 MHz

C

iss

C

oss

C

rss

0

10

12

10

8

6

4

, Ga te - Sourc e Vo lta ge [V]

2

GS

V

0

0 2 4 6 8 101214

QG, Tota l Gate C harge [n C]

Figure 5. Capacitance C haracteristics Figure 6. Gate Charge Characteristics

= 1.6 A

D

Rev. A, February 2002©2002 Fairchild Semiconductor Corporation