Fairchild Semiconductor FQU24N08, FQD24N08 Datasheet
FQD24N08 / FQU24N08
80V N-Channel MOSFET
August 2000
QFET
QFET
QFETQFET
TM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
FQD24N08 / FQU24N08
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, high
efficiency switching for DC/DC converters, and DC motor
control.
D
S
D-PAK
FQD Series
G
G
Absolute Maximum Ratings T
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
T
, T
J
STG
T
L
Drain-Source Voltage 80 V
Drain Current
Drain Current - Pulsed
Gate-Source Voltage ± 25 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (TA = 25°C) *
Power Dissipation (T
Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Parameter FQD24N08 / FQU24N08 Units
- Continuous (T
- Continuous (T
= 25°C)
C
- Derate above 25°C 0.4 W/°C
Features
• 19.6A, 80V, R
• Low gate charge ( typical 19 nC)
• Low Crss ( typical 50 pF)
•Fast switching
• 100% avalanche tested
• Improved dv/dt capability
I-PAK
D
S
= 25°C unless otherwise noted
C
= 25°C)
C
= 100°C)
C
FQU Series
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
= 0.06Ω @VGS = 10 V
DS(on)
!
!
G
19.6 A
12.4 A
78.4 A
230 mJ
19.6 A
5.0 mJ
6.5 V/ns
2.5 W
50 W
300 °C
!
!
D
!
!
"
"
"
"
"
"
"
"
!
!
S
Thermal Characteristics
Symbol Parameter Typ Max Units
R
θJC
R
θJA
R
θJA
* When mounted on the minimum pad size recommended (PCB Mount)
©2000 Fairchild Semiconductor International
Thermal Resistance, Junction-to-Case -- 2.5 °C/W
Thermal Resistance, Junction-to-Ambient * -- 50 °C/W
Thermal Resistance, Junction-to-Ambient -- 110 °C/W
Rev. A, August 2000
FQD24N08 / FQU24N08
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
DSS
/ ∆T
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
J
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
= 0 V, ID = 250 µA
V
GS
I
= 250 µA, Referenced to 25°C
D
V
= 80 V, VGS = 0 V
DS
V
= 64 V, TC = 125°C
DS
= 25 V, VDS = 0 V
V
GS
= -25 V, VDS = 0 V
V
GS
80 -- -- V
-- 0.08 -- V/°C
-- -- 1 µA
-- -- 10 µA
-- -- 100 nA
-- -- -100 nA
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
= VGS, ID = 250 µA
V
DS
V
= 10 V, ID = 9.8 A
GS
= 30 V, ID = 9.8 A
V
DS
(Note 4)
2.0 -- 4.0 V
-- 0.048 0.06 Ω
-- 11.5 -- S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance -- 210 270 pF
Reverse Transfer Capacitance -- 50 65 pF
V
= 25 V, VGS = 0 V,
DS
f = 1.0 MHz
-- 580 750 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Turn-On Rise Time -- 105 220 ns
Turn-Off Delay Time -- 30 70 ns
Turn-Off Fall Time -- 35 80 ns
Total Gate Charge
Gate-Source Charge -- 4.2 -- nC
Gate-Drain Charge -- 9.6 -- nC
= 40 V, ID = 24 A,
V
DD
R
= 25 Ω
G
V
= 64 V, ID = 24 A,
DS
V
GS
= 10 V
(Note 4, 5)
(Note 4, 5)
-- 10 30 ns
-- 19 25 nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.82mH, IAS = 19.6A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 24A, di/dt ≤ 300A/µs, VDD ≤ BV
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temp er at ur e
©2000 Fairchild Semiconductor International
Maximum Continuous Drain-Source Diode Forward Current -- -- 19.6 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 78.4 A
= 0 V, IS = 19.6 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 130 -- nC
Starting TJ = 25°C
DSS,
V
GS
V
= 0 V, IS = 24 A,
GS
/ dt = 100 A/µs
dI
F
-- -- 1.5 V
-- 63 -- ns
(Note 4)
Rev. A, August 2000
Typical Characteristics
V
GS
Top : 1 5 . 0 V
10.0 V
8.0 V
7.0 V
6.0 V
1
10
5.5 V
5.0 V
Bottom : 4.5 V
0
10
, Dra i n Current [A]
D
FQD24N08 / FQU24N08
I
※
1. 250μs Pulse Test
-1
10
-1
10
2. T
0
10
VDS, Drain-Source Voltage [V]
0.20
0.16
],
Ω
0.12
[
DS(on)
R
0.08
Drain-Source On-Resistance
0.04
0.00
0 20406080100
VGS = 10V
VGS = 20V
ID , Drain Current [A]
Notes :
1
10
℃
150
℃
25
0
10
, Drain Current [A]
D
I
℃
= 25
C
1
10
-1
10
246810
℃
-55
※
Notes :
1. V
= 30V
DS
2. 250μs Pulse Test
VGS, Gate-Source Voltage [V]
Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics
1
10
※
Note : T
0
10
℃
℃
25
, Reverse Drain Current [A]
DR
℃
= 25
J
I
150
-1
10
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
※
Notes :
1. V
= 0V
GS
2. 250μs Pulse Test
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate V oltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
1600
1400
1200
1000
800
600
Capacitance [pF]
400
200
0
-1
10
C
oss
C
iss
C
rss
C
= Cgs + Cgd (Cds = shorted)
iss
C
= Cds + C
oss
gd
C
= C
rss
gd
※
Notes :
1. V
= 0 V
GS
2. f = 1 MHz
0
10
1
10
VDS, Drain-Source Voltage [V]
12
10
8
6
4
, Gate-Source Voltage [V]
2
GS
V
0
02468101214161820
QG, Tota l Gate Charge [n C]
VDS = 40V
VDS = 64V
※
Note : I
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
D
= 24A
Rev. A, August 2000©2000 Fairchild Semiconductor International
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