Fairchild Semiconductor FQU13N10, FQD13N10 Datasheet
FQD13N10 / FQU13N10
100V N-Channel MOSFET
January 2001
QFET
QFET
QFETQFET
FQD13N10 / FQU13N10
TM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
D
S
D-PAK
= 25°C)
C
G
D
S
= 25°C unless otherwise noted
C
= 25°C)
C
= 100°C)
C
FQD Series
- Continuous (T
- Continuous (T
- Derate above 25°C 0.32 W/°C
G
Absolute Maximum Ratings T
Symbol Parameter FQD13N10 / FQU13N10 Units
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
, T
T
J
STG
T
L
Drain-Source Voltage 100 V
Drain Current
Drain Current - Pulsed
Gate-Source Voltage ± 25 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (TA = 25°C) *
Power Dissipation (T
Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Features
• 10A, 100V, R
• Low gate charge ( typical 12 nC)
• Low Crss ( typical 20 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
I-PAK
FQU Series
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
= 0.18Ω @VGS = 10 V
DS(on)
G
10 A
6.3 A
40 A
95 mJ
10 A
4.0 mJ
6.0 V/ns
2.5 W
40 W
300 °C
D
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S
Thermal Characteristics
Symbol Parameter Typ Max Units
R
θJC
R
θJA
R
θJA
* When mounted on the minimum pad size recommended (PCB Mount)
©2000 Fairchild Semiconductor International
Thermal Resistance, Junction-to-Case -- 3.13 °C/W
Thermal Resistance, Junction-to-Ambient * -- 50 °C/W
Thermal Resistance, Junction-to-Ambient -- 110 °C/W
Rev. A1, January 2001
FQD13N10 / FQU13N10
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter T e s t Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
DSS
/ ∆T
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
J
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
= 0 V, ID = 250 µA
V
GS
I
= 250 µA, Referenced to 25°C
D
V
= 100 V, VGS = 0 V
DS
V
= 80 V, TC = 125°C
DS
V
= 25 V, VDS = 0 V
GS
= -25 V, VDS = 0 V
V
GS
100 -- -- V
-- 0.09 -- V/°C
-- -- 1 µA
-- -- 10 µA
-- -- 100 nA
-- -- -100 nA
On Characteristics
V
R
g
FS
GS(th)
DS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
= VGS, ID = 250 µA
DS
= 10 V, ID = 5.0 A
V
GS
= 40 V, ID = 5.0 A
V
DS
(Note 4)
2.0 -- 4.0 V
-- 0.142 0.18 Ω
-- 6.3 -- S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance -- 100 130 pF
Reverse Transfer Capacitance -- 20 25 pF
= 25 V, VGS = 0 V,
V
DS
f = 1.0 MHz
-- 345 450 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Turn-On Rise Time -- 55 120 ns
Turn-Off Delay Time -- 20 50 ns
Turn-Off Fall Time -- 25 60 ns
Total Gate Charge
Gate-Source Charge -- 2.5 -- nC
Gate-Drain Charge -- 5.1 -- nC
= 50 V, ID = 12.8 A,
V
DD
= 25 Ω
R
G
V
= 80 V, ID = 12.8 A,
DS
V
GS
= 10 V
(Note 4, 5)
(Note 4, 5)
-- 5 20 ns
-- 12 16 nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 1.43mH, IAS = 10A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 12.8A, di/dt ≤ 300A/µs, VDD ≤ BV
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2000 Fairchild Semiconductor International
Maximum Continuous Drain-Source Diode Forward Current -- -- 10 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 40 A
= 0 V, IS = 10 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 0.17 -- µC
Starting TJ = 25°C
DSS,
V
GS
= 0 V, IS = 12.8 A,
V
GS
/ dt = 100 A/µs
dI
F
-- -- 1.5 V
-- 72 -- ns
(Note 4)
Rev. A1, January 2001
Typical Characteristics
FQD13N10 / FQU13N10
V
GS
Top : 15 .0 V
10.0 V
8.0 V
1
7.0 V
10
6.0 V
5.5 V
5.0 V
Botto m : 4.5 V
0
10
, Drain Current [A]
D
I
-1
10
-1
10
0
10
※
Notes :
1. 250μs Pulse Tes t
℃
= 25
2. T
C
1
10
VDS, Drain-Source Voltage [V]
0.8
0.6
],
0.4
Ω
[
DS(ON)
R
0.2
Drain-Source On-Resistance
0.0
0 10203040
VGS = 10V
VGS = 20V
※
Note : T
℃
= 25
J
ID, Drain Current [A]
1
10
℃
, Dra in Cur re nt [A]
D
I
10
150
0
10
℃
25
℃
-55
-1
246810
※
Notes :
1. V
= 40V
DS
2. 250μs Pulse Tes t
VGS , Gate-Sour c e Voltag e [V]
Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s
1
10
0
10
, Reverse Drain Current [A]
DR
I
-1
10
℃
150
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
℃
25
※
Notes :
= 0V
1. V
GS
2. 250μs Pulse Tes t
VSD, Sou r c e -Drain v o ltage [V]
Figure 3. On-Resistance Variati on vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
900
750
600
450
300
Capacitance [pF]
150
0
-1
10
C
= Cgs + Cgd (Cds = shorted)
iss
= Cds + C
C
oss
gd
C
= C
rss
gd
C
iss
C
oss
※
Notes :
1. V
C
rss
0
10
2. f = 1 MH z
1
10
= 0 V
GS
VDS, Drain-Source Voltage [V]
12
10
8
6
4
, Gate-Source Voltage [V]
2
GS
V
0
024681012
QG, Tota l Gate Charge [n C]
VDS = 50V
VDS = 80V
※
Note : I
= 12.8A
D
Figure 5. Capacitance C haracteristics Figure 6. Gate Charge Characteristi cs
©2000 Fairchild Semiconductor International Rev. A1, January 2001
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