Fairchild Semiconductor FQD10N20L Datasheet
©2000 Fairchild Semiconductor International
December 2000
Rev. A2, December 2000
FQD10N20L / FQU10N20L
QFET
QFETQFET
QFET
TM
FQD10N20L / FQU10N 20L
200V LOGIC N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize
on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation modes. These devices are
well suited for high efficiency switching DC/DC conv erters,
switch mode power supplies, and motor control.
Features
• 7.6A, 200V, R
DS(on)
= 0.36Ω @VGS = 10 V
• Low gate charge ( typical 13 nC)
• Low Crss ( typical 14 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low level gate drive requirement allowing direct
operation from logic drivers
Absolute Maximum Ratings T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol Parameter FQD10N20L / FQU10N20L Units
V
DSS
Drain-Source Voltage 200 V
I
D
Drain Current
- Continuous (T
C
= 25°C)
7.6 A
- Continuous (T
C
= 100°C)
4.8 A
I
DM
Drain Current - Pulsed
(Note 1)
30.4 A
V
GSS
Gate-Source Voltage ± 20 V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
180 mJ
I
AR
Avalanche Current
(Note 1)
7.6 A
E
AR
Repetitive Avalanche Energy
(Note 1)
5.1 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3)
5.5 V/ns
P
D
Power Dissipation (TA = 25°C) *
2.5 W
Power Dissipation (T
C
= 25°C)
51 W
- Derate above 25°C 0.4 W/°C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +150 °C
T
L
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
300 °C
Symbol Parameter Typ Max Units
R
θJC
Thermal Resistance, Junction-to-Case -- 2.48 °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient * -- 50 °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient -- 110 °C/W
* When mounted on the minimum pad size recommended (PCB Mount)
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S
D
G
I-PAK
FQU Series
D-PAK
FQD Series
G
S
D
G
S
D
©2000 Fairchild Semiconductor International
FQD10N20L / FQU10N20L
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
Rev. A2, December 2000
Electrical Characteristics T
C
= 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 4.7mH, IAS = 7.6A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 10A, di/dt ≤ 300A/µs, VDD ≤ BV
DSS,
Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, ID = 250 µA
200 -- -- V
∆BV
DSS
/ ∆T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 µA, Referenced to 25°C
-- 0.18 -- V/°C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 200 V, VGS = 0 V
-- -- 1 µA
V
DS
= 160 V, TC = 125°C
-- -- 10 µA
I
GSSF
Gate-Body Leakage Current, Forward
V
GS
= 20 V, VDS = 0 V
-- -- 100 nA
I
GSSR
Gate-Body Leakage Current, Reverse
V
GS
= -20 V, VDS = 0 V
-- -- -100 nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= VGS, ID = 250 µA
1.0 -- 2.0 V
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 10 V, ID = 3.8 A
V
GS
= 5 V, ID = 3.8 A
--
0.29
0.3
0.36
0.38
Ω
g
FS
Forward Transconductance
V
DS
= 30 V, ID = 3.8 A
-- 9.6 -- S
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 25 V, VGS = 0 V,
f = 1.0 MHz
-- 640 830 pF
C
oss
Output Capacitance -- 95 125 pF
C
rss
Reverse Transfer Capacitance -- 14 18 pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
DD
= 100 V, ID = 10 A,
R
G
= 25 Ω
-- 13 35 ns
t
r
Turn-On Rise Time -- 150 310 ns
t
d(off)
Turn-Off Delay Time -- 5 0 110 ns
t
f
Turn-Off Fall Time -- 95 200 ns
Q
g
Total Gate Charge
V
DS
= 160 V, ID = 10 A,
V
GS
= 5 V
-- 13 17 nC
Q
gs
Gate-Source Charge -- 2.4 -- nC
Q
gd
Gate-Drain Charge -- 6.1 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current -- -- 7.6 A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current -- -- 30.4 A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, IS = 7.6 A
-- -- 1.5 V
t
rr
Reverse Recovery Time
V
GS
= 0 V, IS = 10 A,
dI
F
/ dt = 100 A/µs
-- 120 -- ns
Q
rr
Reverse Recovery Charge -- 0.57 -- µC
©2000 Fairchild Semiconductor International
FQD10N20L / FQU10N20L
Rev. A2, December 2000
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
10
-1
10
0
10
1
150
℃
※
Notes :
1. V
GS
= 0V
2. 250μs Pulse Test
25
℃
I
DR
, Reverse Drain Current [A]
VSD, Sou r c e-Drain voltage [V]
0246810
10
-1
10
0
10
1
150
℃
25
℃
-55
℃
※
Notes :
1. V
DS
= 30V
2. 250μs Pulse Tes t
I
D
, Dra in Curre nt [A]
VGS, Gate-Source Voltage [V]
10
-1
10
0
10
1
10
-1
10
0
10
1
V
GS
Top : 10 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
Botto m : 3.0 V
※
Notes :
1. 250μs Pulse Test
2. T
C
= 25
℃
I
D
, Drain Current [A]
VDS, Drain-Source Voltage [V]
0 5 10 15 20 25
0.0
0.4
0.8
1.2
1.6
※
Note : T
J
= 25
℃
VGS = 5V
VGS = 10V
R
DS(on)
[
Ω
],
Drain-Source On-Resistance
ID , Drain Curren t [A]
0 4 8 12 16 20 24
0
2
4
6
8
10
12
VDS = 100V
VDS = 40V
VDS = 160V
※
Note : I
D
= 10 A
V
GS
, Gate-Source Voltage [V]
QG, Tota l Gate Charge [n C]
10
-1
10
0
10
1
0
300
600
900
1200
1500
C
iss
= Cgs + Cgd (Cds = shorted)
C
oss
= Cds + C
gd
C
rss
= C
gd
※
Notes :
1. V = 0 V
2. f = 1 MH z
C
rss
C
oss
C
iss
Capacitance [pF]
VDS, Drain-Source Voltage [V]
Typical Characteristics
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Figure 2. Transfer CharacteristicsFigure 1. On-Region Charact eristics
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