Fairchild Semiconductor FQI6P25, FQB6P25 Datasheet

FQB6P25 / FQI6P25

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250V P-Channel MOSFET

April 2000

QFET

QFET

QFETQFET

TM

General Description

FQB6P25 / FQI6P25

These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well

Features

• -6.0A, -250V, R

• Low gate charge ( typical 21 nC)

• Low Crss ( typical 20 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

= 1.1Ω @VGS = -10 V

DS(on)

suited for high efficiency switching DC/DC converters.

D

G

G

S

D2-PAK

FQB Series

G

Absolute Maximum Ratings

D

S



TC = 25°C unless otherwise noted

I2-PAK

FQI Series

Symbol Parameter FQB6P25 / FQI6P25 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

Drain-Source Voltage -250 V
Drain Current

- Continuous (T

- Continuous (T
Drain Current - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TA = 25°C) *
Power Dissipation (T

= 25°C)

C

= 25°C)

C

= 100°C)

C

(Note 1)

(Note 2)
(Note 1)
(Note 1)
(Note 3)

-6.0 A

-3.8 A

-24 A

±

30 V

540 mJ

-6.0 A

9.0 mJ

-5.5 V/ns

3.13 W
90 W

- Derate above 25°C 0.72 W/°C

, T

T

J

STG

T

L

Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds

300 °C

S

D

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θ

JC

R

θ

JA

R

θ

JA

* When mounted on the minimum pad size recommended (PCB Mount)

©2000 Fairchild Semiconductor International

Thermal Resistance, Junction-to-Case -- 1.39 °CW
Thermal Resistance, Junction-to-Ambient * -- 40 °CW
Thermal Resistance, Junction-to-Ambient -- 62.5 °CW

Rev. A, April 2000

FQB6P25 / FQI6P25

Electrical Characteristics



TC = 25°C unless otherwise noted

Symbol Parameter Te st Conditions Min Typ Max Units

Off Characteristics

BV

∆

BV
/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage

DSS

Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = -250 µA

V

GS

= -250 µA, Referenced to 25°C

I

D

V

= -250 V, VGS = 0 V

DS

V

= -200 V, TC = 125°C

DS

= -30 V, VDS = 0 V

V

GS

V

= 30 V, VDS = 0 V

GS

-250 -- -- V

-- -0.1 -- V/°C

-- -- -1

-- -- -10

-- -- -100 nA

-- -- 100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

= VGS, ID = -250 µA

V

DS

= -10 V, ID = -3.0 A

V

GS

= -40 V, ID = -3.0 A

V

DS

(Note 4)

-3.0 -- -5.0 V

-- 0.82 1.1

-- 3.3 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 115 150 pF
Reverse Transfer Capacitance -- 20 25 p F

= -25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 600 780 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Turn-On Rise Time -- 75 160 ns
Turn-Off Delay Time -- 40 90 ns
Turn-Off Fall Time -- 50 110 ns
Total Gate Charge
Gate-Source Charge -- 4.7 -- nC
Gate-Drain Charge -- 10.7 -- nC

= -125 V, ID = -6.0 A,

V

DD

Ω

= 25

R

G

V

= -200 V, ID = -6.0 A,

DS

V

GS

= -10 V

(Note 4, 5)

(Note 4, 5)

-- 13 35 ns

-- 21 27 nC

µ

A

µ

A

Ω

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 24mH, I

3. ISD  -6.0A, di/dt  300A/µs, VDD  BV

4. Pulse Test : Pulse width 300µs, Duty cycle 2%

5. Essentially independent of operating temperature

©2000 Fairchild Semiconductor International

Maximum Continuous Drain-Source Diode Forward Current -- -- -6.0 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- -24 A

= 0 V, IS = -6.0 A

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 1.1 --

= -6.0A, VDD = -50V, RG = 25

AS

Ω,

Starting TJ = 25°C

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = -6.0 A,

V

GS

/ dt = 100 A/µs

dI

F

(Note 4)

-- -- -5.0 V

-- 170 -- ns

µ

Rev. A, April 2000

C

Typical Characteristics

V

GS

Top : -15 V

-10 V

1

10

-8.0 V

-7.0 V

-6.5 V

-6.0 V
Botto m : -5.5 V

0

FQB6P25 / FQI6P25

10

, Drain Current [A]

D

-I

-1

10

-1

10

0

10



Note s :

1. 250s Pulse Test



= 25

2. T

C

1

10

-VDS , Drain-Source Voltage [V]

1

10

150

0

10

, Drain Current [A]

D

-I

-1

10

246810



25

-VGS , Gate-Source Voltage [V]





-55



Notes :

= -40V

1. V

DS

2. 250s Pulse Test

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

3.0

2.5
VGS = - 10V

2.0

],

Ω

[

1.5

DS(on)

R

VGS = - 20V

1.0

Drain-Source On-Resistance

0.5

0.0

0 4 8 12 16 20



-ID , Drain Curren t [A]

Note : T

1

10



= 25

J

0

10

, Reverse Drain Current [A]

DR

-I

-1

10

0.0 0.5 1.0 1.5 2.0 2.5 3.0



150

-VSD , Source-Drain Voltage [V]



25



Note s :

= 0V

1. V

GS

2. 250s Pulse Test

Figure 3. On-Resistance Variati on vs.

Drain Current and Gate Voltage

1400

1200

1000

800

600

Capacitance [pF]

400

200

0

-1

10

Figure 5. Capacitance C haracteristics Figure 6. Gate Charge Characteristics

©2000 Fairchild Semiconductor International

C
C
C

C

iss

C

oss

C

rss

0

10

-VDS, Drain-Source Voltage [V]

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

oss

gd

= C

rss

gd



Note s :

1. V

GS

2. f = 1 MHz

1

10

= 0 V

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

VDS = -50V

VDS = -125V

VDS = -200V



= -6.0 A

Note : I

D

Rev. A, April 2000

12

10

8

6

4

, Gate-Source Voltage [V]

GS

2

-V

0

04812162024

QG, Total Gate C h arg e [nC]