Fairchild Semiconductor FQI3P20, FQB3P20 Datasheet

FQB3P20 / FQI3P20

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200V P-Channel MOSFET

April 2000

QFET

QFET

QFETQFET

TM

General Description

FQB3P20 / FQI3P20

These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well

Features

• -2.8A, -200V, R

• Low gate charge ( typical 6.0 nC)

• Low Crss ( typical 7.5 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

= 2.7Ω @VGS = -10 V

DS(on)

suited for high efficiency switching DC/DC converters.

D

G

G

S

D2-PAK

FQB Series

G

Absolute Maximum Ratings

D

S



TC = 25°C unless otherwise noted

I2-PAK

FQI Series

Symbol Parameter FQB3P20 / FQI3P20 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

Drain-Source Voltage -200 V
Drain Current

- Continuous (T

- Continuous (T
Drain Current - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TA = 25°C) *
Power Dissipation (T

= 25°C)

C

= 25°C)

C

= 100°C)

C

(Note 1)

(Note 2)
(Note 1)
(Note 1)
(Note 3)

-2.8 A

-1.77 A

-11.2 A

±

30 V

150 mJ

-2.8 A

5.2 mJ

-5.5 V/ns

3.13 W
52 W

- Derate above 25°C 0.42 W/°C

, T

T

J

STG

T

L

Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds

300 °C

S

D

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θ

JC

R

θ

JA

R

θ

JA

* When mounted on the minimum pad size recommended (PCB Mount)

©2000 Fairchild Semiconductor International

Thermal Resistance, Junction-to-Case -- 2.4 °CW
Thermal Resistance, Junction-to-Ambient * -- 40 °CW
Thermal Resistance, Junction-to-Ambient -- 62.5 °CW

Rev. A, April 2000

FQB3P20 / FQI3P20

Electrical Characteristics



TC = 25°C unless otherwise noted

Symbol Parameter Te st Conditions Min Typ Max Units

Off Characteristics

BV

∆

BV
/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage

DSS

Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = -250 µA

V

GS

= -250 µA, Referenced to 25°C

I

D

V

= -200 V, VGS = 0 V

DS

V

= -160 V, TC = 125°C

DS

= -30 V, VDS = 0 V

V

GS

V

= 30 V, VDS = 0 V

GS

-200 -- -- V

-- -0.18 -- V/°C

-- -- -1

-- -- -10

-- -- -100 nA

-- -- 100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

= VGS, ID = -250 µA

V

DS

= -10 V, ID = -1.4 A

V

GS

= -40 V, ID = -1.4 A

V

DS

(Note 4)

-3.0 -- -5.0 V

-- 2.06 2.7

-- 1.23 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 45 60 pF
Reverse Transfer Capacitance -- 7.5 10 pF

= -25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 190 250 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Turn-On Rise Time -- 35 80 ns
Turn-Off Delay Time -- 12 35 n s
Turn-Off Fall Time -- 25 60 ns
Total Gate Charge
Gate-Source Charge -- 1.7 -- nC
Gate-Drain Charge -- 2.9 -- nC

= -100 V, ID = -2.8 A,

V

DD

Ω

= 25

R

G

V

= -160 V, ID = -2.8 A,

DS

V

GS

= -10 V

(Note 4, 5)

(Note 4, 5)

-- 8.5 25 ns

-- 6.0 8.0 nC

µ

A

µ

A

Ω

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 29mH, I

3. ISD  -2.8A, di/dt  300A/µs, VDD  BV

4. Pulse Test : Pulse width 300µs, Duty cycle 2%

5. Essentially independent of operating temperature

©2000 Fairchild Semiconductor International

Maximum Continuous Drain-Source Diode Forward Current -- -- -2.8 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- -11.2 A

= 0 V, IS = -2.8 A

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 0.34 --

= -2.8A, VDD = -50V, RG = 25

AS

Ω,

Starting TJ = 25°C

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = -2.8 A,

V

GS

/ dt = 100 A/µs

dI

F

(Note 4)

-- -- -5.0 V

-- 100 -- ns

µ

Rev. A, April 2000

C

Typical Characteristics

1

10

V

GS

Top : -1 5 .0 V

-10.0 V

-8.0 V

-7.0 V

-6.5 V

-6.0 V
Bottom : -5.5 V

0

10

FQB3P20 / FQI3P20

, Dra in Curre nt [A]

D

-1

-I

10

-1

10

-VDS, Drain-Source Voltage [V]



Note s :

1. 250s Pulse Test



2. T

= 25

C

0

10

1

10

1

10

0

10

, Drain Current [A]

D

-I

-1

10

246810

-VGS , Gate-Source Voltage [V]



150



25



-55



Notes :

= -40V

1. V

DS

2. 250s Pulse Test

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

10

8

VGS = - 20V

VGS = - 10V



Note : T



= 25

J

],

Ω

6

[

DS(on)

R

4

Drain-Source On-Resistance

2

0

02468

-ID , Drain Curren t [A]

1

10

0

10

, Reverse Drain Current [A]

DR

-I

10



150



25

-1

0.4 0.8 1.2 1.6 2.0 2.4 2.8

-VSD , Source-Drain Voltage [V]



Note s :

= 0V

1. V

GS

2. 250s Pulse Test

Figure 3. On-Resistance Variati on vs.

Drain Current and Gate Voltage

400

300

200

Capacitance [pF]

100

0

-1

10

Figure 5. Capacitance C haracteristics Figure 6. Gate Charge Characteristics

©2000 Fairchild Semiconductor International

C
C
C

C

iss

C

oss

C

rss

0

10

-VDS, Drain-Source Voltage [V]

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

oss

gd

= C

rss

gd



Note s :

1. V

2. f = 1 MHz

1

10

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

VDS = -40V

VDS = -100V

VDS = -160V



= -2.8 A

Note : I

D

Rev. A, April 2000

12

10

8

= 0 V

GS

6

4

, Gate-Source Voltage [V]

GS

2

-V

0

01234567

QG, Tota l Gate Charge [n C]