Fairchild Semiconductor FQB3N25 Datasheet

©2000 Fairchild Semiconductor International

November 2000

Rev. A, November 2000

FQB3N25 / FQI3N25

QFET

QFETQFET

QFET

TM

FQB3N25 / FQI3N25

250V N-Channel M OSFET

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supply.

Features

• 2.8A, 250V, R

DS(on)

= 2.2Ω @VGS = 10 V

• Low gate charge ( typical 4.0 nC)

• Low Crss ( typical 4.7 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

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Absolute Maximum Ratings T

C

= 25°C unless otherwise noted

Thermal Characteristics

Symbol Parameter FQB3N25 / FQI3N25 Units

V

DSS

Drain-Source Voltage 250 V

I

D

Drain Current

- Continuous (T

C

= 25°C)

2.8 A

- Continuous (T

C

= 100°C)

1.77 A

I

DM

Drain Current - Pulsed

(Note 1)

11.2 A

V

GSS

Gate-Source Voltage ± 30 V

E

AS

Single Pulsed Avalanche Energy

(Note 2)

40 mJ

I

AR

Avalanche Current

(Note 1)

2.8 A

E

AR

Repetitive Avalanche Energy

(Note 1)

4.5 mJ

dv/dt Peak Diode Recovery dv/dt

(Note 3)

5.5 V/ns

P

D

Power Dissipation (TA = 25°C) *

3.13 W

Power Dissipation (T

C

= 25°C)

45 W

- Derate above 25°C 0.36 W/°C

T

J

, T

STG

Operating and Storage Temperature Range -55 to +150 °C

T

L

Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

300 °C

Symbol Parameter Typ Max Units

R

θJC

Thermal Resistance, Junction-to-Case -- 2.78 °C/W

R

θJA

Thermal Resistance, Junction-to-Ambient * -- 40 °C/W

R

θJA

Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

* When mounted on the minimum pad size recommended (PCB Mount)

S

D

G

D2-PAK

FQB Series

I2-PAK

FQI Series

G

S

D

G

S

D

Rev. A, November 2000

FQB3N25 / FQI3N25

(Note 4)

(Note 4, 5)

(Note 4, 5)

(Note 4)

©2000 Fairchild Semiconductor International

Electrical Characteristics T

C

= 25°C unless otherwise noted

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 8.2mH, IAS = 2.8A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 2.8A, di/dt ≤ 300A/µs, VDD ≤ BV

DSS,

Starting TJ = 25°C

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Symbol Parameter Te st Conditions Min Typ Max Units

Off Characteristics

BV

DSS

Drain-Source Breakdown Voltage

V

GS

= 0 V, ID = 250 µA

250 -- -- V

∆BV

DSS

/ ∆T

J

Breakdown Voltage Temperature
Coefficient

I

D

= 250 µA, Referenced to 25°C

-- 0.24 -- V/°C

I

DSS

Zero Gate Voltage Drain Current

V

DS

= 250 V, VGS = 0 V

-- -- 1 µA

V

DS

= 200 V, TC = 125°C

-- -- 10 µA

I

GSSF

Gate-Body Leakage Current, Forward

V

GS

= 30 V, VDS = 0 V

-- -- 100 nA

I

GSSR

Gate-Body Leakage Current, Reverse

V

GS

= -30 V, VDS = 0 V

-- -- -100 nA

On Characteristics

V

GS(th)

Gate Threshold Voltage

V

DS

= VGS, ID = 250 µA

3.0 -- 5.0 V

R

DS(on)

Static Drain-Source
On-Resistance

V

GS

= 10 V, ID = 1.4 A

-- 1.75 2.2 Ω

g

FS

Forward Transconductance

V

DS

= 50 V, ID = 1.4 A

-- 1.53 -- S

Dynamic Characteristics

C

iss

Input Capacitance

V

DS

= 25 V, VGS = 0 V,

f = 1.0 MHz

-- 130 170 pF

C

oss

Output Capacitance -- 30 40 pF

C

rss

Reverse Transfer Capacitance -- 4.7 6.1 pF

Switching Characteristics

t

d(on)

Turn-On Delay Time

V

DD

= 125 V, ID = 2.8 A,

R

G

= 25 Ω

-- 6.6 23 ns

t

r

Turn-On Rise Time -- 25 60 ns

t

d(off)

Turn-Off Delay Time -- 5.5 21 ns

t

f

Turn-Off Fall Time -- 20 50 ns

Q

g

Total Gate Charge

V

DS

= 200 V, ID = 2.8 A,

V

GS

= 10 V

-- 4.0 5.2 nC

Q

gs

Gate-Source Charge -- 1.1 -- nC

Q

gd

Gate-Drain Charge -- 2.2 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

Maximum Continuous Drain-Source Diode Forward Current -- -- 2.8 A

I

SM

Maximum Pulsed Drain-Source Diode Forward Current -- -- 11.2 A

V

SD

Drain-Source Diode Forward Voltage

V

GS

= 0 V, IS = 2.8 A

-- -- 1.5 V

t

rr

Reverse Recovery Time

V

GS

= 0 V, IS = 2.8 A,

dI

F

/ dt = 100 A/µs

-- 100 -- ns

Q

rr

Reverse Recovery Charge -- 0.3 - - µC

FQB3N25 / FQI3N25

Rev. A, November 2000©2000 Fairchild Semiconductor International

10

-1

10

0

10

1

10

-1

10

0

10

1

V

GS

Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V
Bottom : 5.5 V

※

Notes :

1. 250μs Pulse Test

2. T

C

= 25

℃

I

D

, Drain Current [A]

VDS, Drain-Source Voltage [V]

0123456

0

2

4

6

8

10

VGS = 20V

VGS = 10V

R

DS(on)

[

Ω

],

Drain-Source On-Resistance

ID , Drain Current [A]

012345

0

2

4

6

8

10

12

VDS = 125V

VDS = 50V

VDS = 200V

※

Note : I

D

= 2.8 A

V

GS

, Gate-Source Voltage [V]

QG, Tota l Gate Charge [n C]

10

-1

10

0

10

1

0

50

100

150

200

250

300

C

iss

= Cgs + Cgd (Cds = shorted)

C

oss

= Cds + C

gd

C

rss

= C

gd

※

Note s :

1. V

GS

= 0 V

2. f = 1 MH z

C

rss

C

oss

C

iss

Capacitance [pF]

VDS, Drain-Source Voltage [V]

0.2 0.4 0.6 0.8 1.0 1.2 1.4

10

-1

10

0

10

1

150

℃

※

Notes :

1. V

GS

= 0V

2. 250μs Pulse Test

25

℃

I

DR

, Reverse Drain Current [A]

VSD, Source-Drain voltage [V]

246810

10

-2

10

-1

10

0

10

1

※

Notes :

1. V

DS

= 50V

2. 250μs Pulse Test

-55

℃

25

℃

150

℃

I

D

, Drain Current [A]

VGS , Gate-Source Voltage [V]

Typical Characteristics

Figure 5. Capacitance C haracteristics Figure 6. Gate Charg e C haracteristics

Figure 3. On-Resistance Variati on vs .

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

Figure 2. Transfer CharacteristicsFigure 1. On-Region Charact eristics