Fairchild Semiconductor FQI19N10, FQB19N10 Datasheet
FQB19N10 / FQI19N10
100V N-Channel MOSFET
August 2000
QFET
QFET
QFETQFET
TM
General Description
These N-Channel enhancement mode power field effect
FQB19N10 / FQI19N10
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
D
G
S
D2-PAK
FQB Series
Absolute Maximum Ratings T
Symbol Parameter FQB19N10 / FQI19N10 Units
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
, T
T
J
STG
T
L
Drain-Source Voltage 100 V
Drain Current
Drain Current - Pulsed
Gate-Source Voltage ± 25 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (TA = 25°C) *
Power Dissipation (T
Operating and Storage Temperature Range -55 to +175 °C
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
G
D
S
= 25°C unless otherwise noted
C
- Continuous (T
- Continuous (T
= 25°C)
C
- Derate above 25°C 0.5 W/°C
= 25°C)
C
= 100°C)
C
Features
• 19A, 100V, R
• Low gate charge ( typical 19 nC)
• Low Crss ( typical 32 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
I2-PAK
FQI Series
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
= 0.1Ω @VGS = 10 V
DS(on)
19 A
13.5 A
76 A
220 mJ
19 A
7.5 mJ
6.0 V/ns
3.75 W
75 W
300 °C
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G
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D
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S
Thermal Characteristics
Symbol Parameter Typ Max Units
R
θJC
R
θJA
R
θJA
* When mounted on the minimum pad size recommended (PCB Mount)
©2000 Fairchild Semiconductor International
Thermal Resistance, Junction-to-Case -- 2.0 °C/W
Thermal Resistance, Junction-to-Ambient * -- 40 °C/W
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W
Rev. A, August 2000
FQB19N10 / FQI19N10
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
DSS
/ ∆T
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
J
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
= 0 V, ID = 250 µA
V
GS
I
= 250 µA, Referenced to 25°C
D
V
= 100 V, VGS = 0 V
DS
V
= 80 V, TC = 150°C
DS
V
= 25 V, VDS = 0 V
GS
= -25 V, VDS = 0 V
V
GS
100 -- -- V
-- 0.1 -- V/°C
-- -- 1 µA
-- -- 10 µA
-- -- 100 nA
-- -- -100 nA
On Characteristics
V
R
g
FS
GS(th)
DS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
= VGS, ID = 250 µA
DS
= 10 V, ID = 9.5 A
V
GS
= 40 V, ID = 9.5 A
V
DS
(Note 4)
2.0 -- 4.0 V
-- 0.078 0.1 Ω
-- 12 -- S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance -- 165 215 pF
Reverse Transfer Capacitance -- 32 40 pF
= 25 V, VGS = 0 V,
V
DS
f = 1.0 MHz
-- 600 780 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Turn-On Rise Time -- 150 310 ns
Turn-Off Delay Time -- 20 50 ns
Turn-Off Fall Time -- 65 140 ns
Total Gate Charge
Gate-Source Charge -- 3.9 -- nC
Gate-Drain Charge -- 9.0 -- nC
= 50 V, ID = 19 A,
V
DD
= 25 Ω
R
G
V
= 80 V, ID = 19 A,
DS
V
GS
= 10 V
(Note 4, 5)
(Note 4, 5)
-- 7.5 25 ns
-- 19 25 nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.9mH, IAS = 19A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 19A, di/dt ≤ 300A/µs, VDD ≤ BV
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2000 Fairchild Semiconductor International
Maximum Continuous Drain-Source Diode Forward Current -- -- 19 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 76 A
= 0 V, IS = 19 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 200 -- nC
Starting TJ = 25°C
DSS,
V
GS
= 0 V, IS = 19 A,
V
GS
/ dt = 100 A/µs
dI
F
-- -- 1.5 V
-- 78 -- ns
(Note 4)
Rev. A, August 2000
Typical Characteristics
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
1
10
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
1
10
℃
175
0
℃
25
10
FQB19N10 / FQI19N10
, Drain Current [A]
D
I
0
10
-1
10
0
10
※
Notes :
1. 250μs Pulse Te st
℃
2. T
= 25
C
1
10
VDS, Drain-Source Voltage [V]
, Dra in Curre n t [A ]
D
I
-1
10
246810
VGS , Gate-Source Voltage [V]
℃
-55
※
Note s :
1. V
= 40V
DS
2. 250μs Pulse Test
Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s
0.30
0.24
VGS = 10V
],
Ω
0.18
[
DS(on)
R
0.12
Drain-Source On-Resistance
0.06
0.00
0 20406080
VGS = 20V
※
Note : T
℃
= 25
J
ID , Drain Curren t [A ]
1
10
0
10
, Reverse Drain Current [A]
DR
I
-1
10
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
℃
℃
25
175
VSD , Source-Drain Voltage [V]
※
Notes :
1. V
= 0V
GS
2. 250μs Pulse Te st
Figure 3. On-Resistance Variati on vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
1500
1200
900
C
= Cgs + Cgd (Cds = shorted)
iss
= Cds + C
C
oss
gd
C
= C
rss
gd
C
iss
C
oss
600
Capacitance [pF]
300
0
-1
10
C
rss
0
10
10
1
※
Notes :
= 0 V
1. V
GS
2. f = 1 MHz
VDS, Drain-Source Voltage [V]
12
10
8
6
4
, Gate-Source Voltage [V]
2
GS
V
0
0 4 8 12 16 20
QG, Tota l Gate Charge [n C]
VDS = 50V
VDS = 80V
※
Note : I
Figure 5. Capacitance C haracteristics Figure 6. Gate Charge Characteristics
D
= 19A
Rev. A, August 2000©2000 Fairchild Semiconductor International
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