Fairchild Semiconductor FQI13N10, FQB13N10 Datasheet
FQB13N10 / FQI13N10
100V N-Channel MOSFET
January 2001
QFET
QFET
QFETQFET
FQB13N10 / FQI13N10
TM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand a high energy pulse in the
avalanche and commutation modes. These devices are
well suited for low voltage applications such as audio
amplifier, high efficiency switching DC/DC converters, and
DC motor control.
D
G
S
D2-PAK
FQB Series
Absolute Maximum Ratings T
Symbol Parameter FQB13N10 / FQI13N10 Units
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
, T
T
J
STG
T
L
Drain-Source Voltage 100 V
Drain Current
Drain Current - Pulsed
Gate-Source Voltage ± 25 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (TA = 25°C) *
Power Dissipation (T
Operating and Storage Temperature Range -55 to +175 °C
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
G
D
S
= 25°C unless otherwise noted
C
- Continuous (T
- Continuous (T
= 25°C)
C
- Derate above 25°C 0.43 W/°C
= 25°C)
C
= 100°C)
C
Features
• 12.8A, 100V, R
• Low gate charge ( typical 12 nC)
• Low Crss ( typical 20 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
I2-PAK
FQI Series
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
= 0.18Ω @VGS = 10 V
DS(on)
!
!
G
12.8 A
9.05 A
51.2 A
95 mJ
12.8 A
6.5 mJ
6.0 V/ns
3.75 W
65 W
300 °C
!
!
D
!
!
"
"
"
"
"
"
"
"
!
!
S
Thermal Characteristics
Symbol Parameter Typ Max Units
R
θJC
R
θJA
R
θJA
* When mounted on the minimum pad size recommended (PCB Mount)
©2000 Fairchild Semiconductor International
Thermal Resistance, Junction-to-Case -- 2.31 °C/W
Thermal Resistance, Junction-to-Ambient * -- 40 °C/W
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W
Rev. A1, January 2001
FQB13N10 / FQI13N10
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
DSS
/ ∆T
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
J
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
= 0 V, ID = 250 µA
V
GS
I
= 250 µA, Referenced to 25°C
D
V
= 100 V, VGS = 0 V
DS
V
= 80 V, TC = 150°C
DS
V
= 25 V, VDS = 0 V
GS
= -25 V, VDS = 0 V
V
GS
100 -- -- V
-- 0.09 -- V/°C
-- -- 1 µA
-- -- 10 µA
-- -- 100 nA
-- -- -100 nA
On Characteristics
V
R
g
FS
GS(th)
DS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
= VGS, ID = 250 µA
DS
= 10 V, ID = 6.4 A
V
GS
= 40 V, ID = 6.4 A
V
DS
(Note 4)
2.0 -- 4.0 V
-- 0.142 0.18 Ω
-- 6.8 -- S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance -- 100 130 pF
Reverse Transfer Capacitance -- 20 25 pF
= 25 V, VGS = 0 V,
V
DS
f = 1.0 MHz
-- 345 450 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Turn-On Rise Time -- 55 120 ns
Turn-Off Delay Time -- 20 50 ns
Turn-Off Fall Time -- 25 60 ns
Total Gate Charge
Gate-Source Charge -- 2.5 -- nC
Gate-Drain Charge -- 5.1 -- nC
= 50 V, ID = 12.8 A,
V
DD
= 25 Ω
R
G
V
= 80 V, ID = 12.8 A,
DS
V
GS
= 10 V
(Note 4, 5)
(Note 4, 5)
-- 5 20 ns
-- 12 16 nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.87mH, IAS = 12.8A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 12.8A, di/dt ≤ 300A/µs, VDD ≤ BV
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2000 Fairchild Semiconductor International
Maximum Continuous Drain-Source Diode Forward Current -- -- 12.8 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 51.2 A
= 0 V, IS = 12.8 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 0.17 -- µC
Starting TJ = 25°C
DSS,
V
GS
= 0 V, IS = 12.8 A,
V
GS
/ dt = 100 A/µs
dI
F
-- -- 1.5 V
-- 72 -- ns
(Note 4)
Rev. A1, January 2001
Typical Characteristics
FQB13N10 / FQI13N10
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
1
10
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
0
10
, Drain Current [A]
D
I
-1
10
-1
10
0
10
※
Notes :
1. 250μs Pulse Test
℃
= 25
2. T
C
1
10
VDS, Drain-Source Voltage [V]
0.8
0.6
],
0.4
Ω
[
DS(ON)
R
0.2
Drain-Source On-Resistance
0.0
0 10203040
VGS = 10V
VGS = 20V
※
Note : T
℃
= 25
J
ID, Drain Current [A]
1
10
℃
, Dra in Curre n t [A]
D
I
10
175
0
℃
25
10
℃
-55
-1
246810
※
Note s :
1. V
= 40V
DS
2. 250μs Pulse Tes t
VGS , Gate-Source Voltage [V]
Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s
1
10
0
10
, Reverse Drain Current [A]
DR
I
-1
10
℃
175
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
℃
25
※
Notes :
= 0V
1. V
GS
2. 250μs Pulse Test
VSD, Sou r c e-Drain voltage [V]
Figure 3. On-Resistance Variati on vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
900
750
600
450
300
Capacitance [pF]
150
0
-1
10
C
= Cgs + Cgd (Cds = shorted)
iss
= Cds + C
C
oss
gd
C
= C
rss
gd
C
iss
C
oss
※
Notes :
1. V
C
rss
0
10
2. f = 1 MH z
1
10
= 0 V
GS
VDS, Drain-Source Voltage [V]
12
10
8
6
4
, Gate-Source Voltage [V]
2
GS
V
0
024681012
QG, Tota l Gate Charge [n C]
VDS = 50V
VDS = 80V
※
Note : I
= 12.8A
D
Figure 5. Capacitance C haracteristics Figure 6. Gate Charge Characteristics
©2000 Fairchild Semiconductor International Rev. A1, January 2001
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