Fairchild Semiconductor FQI13N06, FQB13N06 Datasheet

FQB13N06 / FQI13N06

60V N-Channel MOSFET

FQB13N06 / FQI13N06

May 2001

TM

QFET

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as DC/DC

Features

• 13A, 60V, R

• Low gate charge ( typical 5.8 nC)

• Low Crss ( typical 15 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• 175°C maximum junction temperature rating

= 0.135Ω @VGS = 10 V

DS(on)

converters, high efficiency switching for power
management in portable and battery operated products.

!

!

D

!

!

"

"

"

"

"

"
"

"

!

!

S

D

G

S

D2-PAK

FQB Series

G

D

Absolute Maximum Ratings T

S

= 25°C unless otherwise noted

C

I2-PAK

FQI Series

!

!

G

Symbol Parameter FQB13N06 / FQI13N06 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

Drain-Source Voltage 60 V
Drain Current

- Continuous (T

- Continuous (T

Drain Current - Pulsed

= 25°C)

C

= 100°C)

C

(Note 1)

13 A

9.2 A
52 A

Gate-Source Voltage ± 25 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TA = 25°C) *
Power Dissipation (T

= 25°C)

C

(Note 2)
(Note 1)
(Note 1)
(Note 3)

85 mJ
13 A

4.5 mJ

7.0 V/ns

3.75 W
45 W

- Derate above 25°C 0.3 W/°C

, T

T

J

STG

T

L

Operating and Storage Temperature Range -55 to +175 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJC

R

θJA

R

θJA

* When mounted on the minimum pad size recommended (PCB Mount)

©2001 Fairchild Semiconductor Corporation Rev. A1. May 2001

Thermal Resistance, Junction-to-Case -- 3.35 °C/W
Thermal Resistance, Junction-to-Ambient * -- 40 °C/W
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

FQB13N06 / FQI13N06

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 µA

V

GS

I

= 250 µA, Referenced to

D

25°C
V

= 60 V, VGS = 0 V

DS

V

= 48 V, TC = 150°C

DS

V

= 25 V, VDS = 0 V

GS

= -25 V, VDS = 0 V

V

GS

60 -- -- V

-- 0.06 -- V/°C

-- -- 1 µA

-- -- 10 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V
R
g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance

V

= VGS, ID = 250 µA

DS

= 10 V, ID = 6.5 A

V

GS

= 25 V, ID = 6.5 A

V

DS

(Note 4)

2.0 -- 4.0 V

-- 0.105 0.135 Ω

-- 5.1 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 90 120 pF
Reverse Transfer Capacitance -- 15 20 pF

V

= 25 V, VGS = 0 V,

DS

f = 1.0 MHz

-- 240 310 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Turn-On Rise Time -- 25 60 ns
Turn-Off Delay Time -- 8 25 ns
Turn-Off Fall Time -- 15 40 ns
Total Gate Charge
Gate-Source Charge -- 2.0 -- nC
Gate-Drain Charge -- 2.5 -- nC

V

= 30 V, ID = 6.5 A,

DD

R

= 25 Ω

G

= 48 V, ID = 13 A,

V

DS

V

GS

= 10 V

(Note 4, 5)

(Note 4, 5)

-- 5 20 ns

-- 5.8 7.5 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 590µH, IAS = 13A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 13A, di/dt ≤ 300A/us, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Maximum Continuous Drain-Source Diode Forward Current -- -- 13 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 52 A

= 0 V, IS = 13 A

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 40 -- nC

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = 13 A,

V

GS

dI

/ dt = 100 A/µs

F

-- -- 1.5 V

-- 39 -- ns

(Note 4)

Rev. A1. May 2001©2001 Fairchild Semiconductor Corporation

Typical Characteristics

FQB13N06 / FQI13N06

V

GS

Top : 15.0 V

10.0 V

8.0 V

1

7.0 V

10

6.0 V

5.5 V

5.0 V
Bottom : 4.5 V

0

10

, Drain Current [A]

D

I

-1

10

-1

10

0

10

"

Notes :

1. 250#s Pulse Test

!

2. T

= 25

C

10

1

VDS, Drain-Source Voltage [V]

500

400

],

$

300

[m

DS(ON)

200

R

Drain-Source On-Resistance

100

0

010203040

VGS = 10V

VGS = 20V

"

Note : T

!

= 25

J

ID, Drain Current [A]

1

10

0

10

!

175

, Drain Current [A]

D

I

10

!

25

!

-1

246810

-55

"

Notes :

1. V

= 25V

DS

2. 250#s Pulse Test

VGS, Gate-Source Voltage [V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

1

10

!

, Reverse Drain Current [A]

DR

I

0

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

175

!

25

VSD, Source-Drain voltage [V]

"

Notes :

= 0V

1. V

GS

2. 250#s Pulse Te st

Figure 3. On-Resistance Variati on vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

VDS = 30V

VDS = 48V

"

Note : I

= 13 A

D

600

500

400

300

200

Capacitance [pF]

100

0

-1

10

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

gd

C

= C

rss

gd

C

iss

C

oss

C

rss

0

10

10

1

"

Notes :

= 0 V

1. V

GS

2. f = 1 M Hz

VDS, Drain-Source Voltage [V]

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

01234567

QG, Tota l Gate Charge [n C]

Figure 5. Capacitance C haracteristics Figure 6. Gate Charge Characteristics

©2001 Fairchild Semiconductor Corporation Rev. A1. May 2001