Fairchild Semiconductor FQI12N60, FQB12N60 Datasheet

FQB12N60 / FQI12N60

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600V N-Channel MOSFET

April 2000

QFET

QFET

QFETQFET

TM

General Description

These N-Channel enhancement mode power field effect

FQB12N60 / FQI12N60

transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.

D

G

S

D2-PAK

FQB Series

Absolute Maximum Ratings

Symbol Parameter FQB12N60 / FQI12N60 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

, T

T

J

STG

T

L

Drain-Source Voltage 600 V
Drain Current

Drain Current - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TA = 25°C) *
Power Dissipation (T

Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

G

D

S



TC = 25°C unless otherwise noted

- Continuous (T

- Continuous (T

= 25°C)

C

- Derate above 25°C 1.43 W/°C

= 25°C)

C

= 100°C)

C

Features

• 10.5A, 600V, R

• Low gate charge ( typical 42 nC)

• Low Crss ( typical 25 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

I2-PAK

FQI Series

(Note 1)

(Note 2)
(Note 1)
(Note 1)
(Note 3)

= 0.7 Ω @ VGS = 10 V

DS(on)

G

10.5 A

6.7 A
42 A

±

30 V

790 mJ

10.5 A
18 mJ

4.5 V

3.13 W

180 W

300 °C

D

S

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θ

JC

R

θ

JA

R

θ

JA

* When mounted on the minimum pad size recommended (PCB Mount)

©2000 Fairchild Semiconductor International

Thermal Resistance, Junction-to-Case -- 0.7 °CW
Thermal Resistance, Junction-to-Ambient * -- 40 °CW
Thermal Resistance, Junction-to-Ambient -- 62.5 °CW

Rev. A, April 2000

FQB12N60 / FQI12N60

Electrical Characteristics



TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

∆

BV
/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage

DSS

Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 µA

V

GS

= 250 µA, Referenced to 25°C

I

D

V

= 600 V, VGS = 0 V

DS

V

= 480 V, TC = 125°C

DS

= 30 V, VDS = 0 V

V

GS

V

= -30 V, VDS = 0 V

GS

600 -- -- V

-- 0.71 -- V/°C

-- -- 10

-- -- 100

-- -- 100 nA

-- -- -100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

= VGS, ID = 250 µA

V

DS

= 10 V, ID = 5.3 A

V

GS

= 50 V, ID = 5.3 A

V

DS

(Note 4)

3.0 -- 5.0 V

-- 0.55 0.7

-- 10 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 200 270 pF

V

= 25 V, VGS = 0 V,

DS

f = 1.0 MHz

Reverse Transfer Capacitance -- 25 35 pF

-- 1480 190 0 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

Turn-On Delay Time
Turn-On Rise Time -- 115 240 ns

= 300 V, ID = 12 A,

V

DD

= 25

G

Ω

R

Turn-Off Delay Time -- 95 200 ns
Turn-Off Fall Time -- 85 180 ns

g
gs
gd

Total Gate Charge
Gate-Source Charge -- 8.6 -- nC
Gate-Drain Charge -- 21 -- nC

V

= 480 V, ID = 12 A,

DS

V

= 10 V

GS

(Note 4, 5)

(Note 4, 5)

-- 30 70 ns

-- 42 54 nC

µ

A

µ

A

Ω

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 13mH, I

3. ISD  12A, di/dt  200A/µs, VDD  BV

4. Pulse Test : Pulse width 300µs, Duty cycle 2%

5. Essentially independent of operating temperature

©2000 Fairchild Semiconductor International

Maximum Continuous Drain-Source Diode Forward Current -- -- 10.5 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 42 A

= 0 V, IS = 10.5 A

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 3.5 --

= 10.5A, VDD = 50V, RG = 25

AS

Ω,

Starting TJ = 25°C

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = 12 A,

V

GS

/ dt = 100 A/µs

dI

F

(Note 4)

-- -- 1.4 V

-- 380 -- ns

µ

Rev. A, April 2000

C

Typical Characteristics

V

GS

Top : 15 V
10 V

8.0 V

7.0 V

6.5 V

1

10

6.0 V
Botto m : 5 .5 V

0

, Drain Current [A]

10

FQB12N60 / FQI12N60

D

I



Note s :

1. 250s Pulse Test



= 25

2. T

C

-1

10

0

10

1

10

VDS , Drain-Source Voltage [V]

Figure 1. On-Region Char act er i stic s

1.8

1

10



150



25

0

10

, Drain Current [A]

D

I

-1

10

246810

VGS , Gate-Source Voltage [V]

Figure 2. Transfer Characteristics



-55



Notes :

= 50V

1. V

DS

2. 250s Pulse Test

1.6

1.4

1.2

],

Ω

[

1.0

DS(on)

0.8

R

VGS = 10V

VGS = 20V

0.6

Drain-Source On-Resistance

0.4

0.2

0.0
0 5 10 15 20 25 30 35

ID , Drain Current [A]

1

10

0

10



, Reverse Drain Current [A]

DR

I

10

150

-1

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6



25



Note s :

= 0V

1. V

GS

2. 250s Pulse Test

VSD , Source-Drain Voltage [V]

Figure 3. On-Resistance Variati on vs.

Drain Current and Gate Voltage

3000

2400

1800

1200

Capacitance [pF]

600

0

-1

10

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Ch a ra ct eristics

©2000 Fairchild Semiconductor International

C
C
C

C

iss

C

oss

C

rss

0

10

VDS, Drain-Source Voltage [V]

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

oss

gd

= C

rss

gd



Note s :

1. V

= 0 V

GS

2. f = 1 MHz

1

10

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current and

Temperature

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 5 10 15 20 25 30 35 40 45

QG, Tota l Gate Charge [n C]

VDS = 120V

VDS = 300V

VDS = 480V



Note : I

= 12 A

D

Rev. A, April 2000