Fairchild Semiconductor FQB12N50 Datasheet

FQB12N50 / FQI12N50

500V N-Channel MOSFET

FQB12N50 / FQI12N50

TM

QFET

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well

Features

• 12.1A, 500V, R

• Low gate charge ( typical 39 nC)

• Low Crss ( typical 25 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

= 0.49Ω @VGS = 10 V

DS(on)

suited for high efficiency switch mode power supplies,
power factor correction, electronic lamp ballasts based on
half bridge.

D

GS

D2-PAK

FQB Series

Absolute Maximum Ratings T

GSD

= 25°C unless otherwise noted

C

I2-PAK

FQI Series

!!!!

!!!!

G

D

!!!!

!!!!

!!!!

!!!!

####

####

""""

""""

!!!!

!!!!
!!!!

!!!!

!!!!

!!!!

S

Symbol Parameter FQB12N50 / FQI12N50 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

Drain-Source Voltage 500 V
Drain Current

- Continuous (T

- Continuous (T

Drain Current - Pulsed

= 25°C)

C

= 100°C)

C

(Note 1)

12.1 A

7.6 A

48.4 A
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TA = 25°C) *
Power Dissipation (T

= 25°C)

C

(Note 2)
(Note 1)
(Note 1)
(Note 3)

878 mJ

12.1 A

17.9 mJ

4.5 V/ns

3.13 W

179 W

- Derate above 25°C 1.43 W/°C

, T

T

J

stg

T

L

Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJC

R

θJA

R

θJA

* When mounted on the minimum pad size recommended (PCB Mount)

©2002 Fairchild Semiconductor Corporation Rev. A, May 2002

Thermal Resistance, Junction-to-Case -- 0.7 °C/W
Thermal Resistance, Junction-to-Ambient * -- 40 °C/W
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

FQB12N50 / FQI12N50

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 µA

V

GS

I

= 250 µA, Referenced to 25°C

D

V

= 500 V, VGS = 0 V

DS

V

= 400 V, TC = 125°C

DS

V

= 30 V, VDS = 0 V

GS

= -30 V, VDS = 0 V

V

GS

500 -- -- V

-- 0.48 -- V/°C

-- -- 1 µA

-- -- 10 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

V

= VGS, ID = 250 µA

DS

= 10 V, ID = 6.05 A

V

GS

= 50 V, ID = 6.05 A

V

DS

(Note 4)

3.0 -- 5.0 V

-- 0.39 0.49 Ω

-- 9.8 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 220 285 pF
Reverse Transfer Capacitance -- 25 33 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 1550 2020 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Turn-On Rise Time -- 120 250 ns
Turn-Off Delay Time -- 70 150 ns
Turn-Off Fall Time -- 80 170 ns
Total Gate Charge
Gate-Source Charge -- 9.3 -- nC
Gate-Drain Charge -- 17.4 -- nC

= 250 V, ID = 12.1 A,

V

DD

R

= 25 Ω

G

(Note 4,5)

V

= 400 V, ID = 12.1 A,

DS

V

GS

(Note 4,5)

= 10 V

-- 35 80 ns

-- 39 51 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 10.8mH, IAS = 12.1A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 12.1A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

©2002 Fairchild Semiconductor Corporation

Maximum Continuous Drain-Source Diode Forward Current -- -- 12.1 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 48.4 A

= 0 V, IS = 12.1 A

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 2.6 -- µC

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = 12.1 A,

V

GS

/ dt = 100 A/µs

dI

F

-- -- 1.4 V

-- 300 -- ns

(Note 4)

Rev. A, May 2002

Typical Characteristics

FQB12N50 / FQI12N50

V

GS

Top : 15 V
10 V

8.0 V

7.0 V

6.5 V

6.0 V
Bottom : 5.5 V

1

10

, Drain Current [A ]

D

I

$

Notes :

1. 250&s Pulse Te st

%

= 25

2. T

0

10

0

10

C

1

10

VDS , Drain-Source Voltage [V]

1.2

1.0

0.8

],

'

[

0.6

DS(ON)

R

0.4

Drain-Source On-Resistance

0.2

0.0
0 10203040

VGS = 20V

VGS = 10V

$

Note : T

%

= 25

J

ID, Drain C u rre n t [A ]

1

10

0

10

, Drain Current [A]

D

I

-1

10

024681012

%

150

%

25

%

-55

$

Notes :

= 50V

1. V

DS

2. 250&s Pulse Test

VGS , Gate-Source Voltage [V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

1

10

0

10

, Reverse Drain Current [A]

DR

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

%

150

%

25

$

Note s :

= 0V

1. V

GS

2. 250&s Pulse Test

VSD , Source-Drain Voltage [V]

Figure 3. On-Resistance Variati on vs.

Drain Current and Gate Voltage

3000

2500

2000

1500

1000

Capacitance [pF]

500

0

-1

10

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Ch a ra ct eristics

©2002 Fairchild Semiconductor Corporation

C

iss

C

oss

C

rss

0

10

VDS, Drain-Source V oltage [V ]

C

= Cgs + Cgd (Cds = shorted )

iss

C

= Cds + C

oss

gd

C

= C

rss

gd

$

Notes :

1. V

GS

2. f = 1 MH z

1

10

= 0 V

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

VDS = 100V

VDS = 250V

VDS = 400V

$

Note : I

= 12.1 A

D

Rev. A, May 2002

12

10

8

6

4

, Gate-Source Voltage [V]

GS

2

V

0

0 5 10 15 20 25 30 35 40 45

QG, Total G a te Charge [nC]