Fairchild Semiconductor FQI10N20L, FQB10N20L Datasheet
FQB10N20L / FQI10N20L
200V LOGIC N-Channel MOSFET
December 2000
QFET
QFET
QFETQFET
FQB10N20L / FQI10N20L
TM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize
on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation modes. These devices are
well suited for high efficiency switching DC/DC conv erte rs,
switch mode power supplies, and motor control.
D
G
S
D2-PAK
FQB Series
Absolute Maximum Ratings T
Symbol Parameter FQB10N20L / FQI10N20L Units
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
, T
T
J
STG
T
L
Drain-Source Voltage 200 V
Drain Current
Drain Current - Pulsed
Gate-Source Voltage ± 20 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (TA = 25°C) *
Power Dissipation (T
Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
G
D
S
= 25°C unless otherwise noted
C
- Continuous (T
- Continuous (T
= 25°C)
C
- Derate above 25°C 0.7 W/°C
= 25°C)
C
= 100°C)
C
Features
• 10A, 200V, R
• Low gate charge ( typical 13 nC)
• Low Crss ( typical 14 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low level gate drive requirement allowing direct
operation from logic drivers
I2-PAK
FQI Series
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
= 0.36Ω @VGS = 10 V
DS(on)
G
10 A
6.3 A
40 A
180 mJ
10 A
8.7 mJ
5.5 V/ns
3.13 W
87 W
300 °C
D
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S
Thermal Characteristics
Symbol Parameter Typ Max Units
R
θJC
R
θJA
R
θJA
* When mounted on the minimum pad size recommended (PCB Mount)
©2000 Fairchild Semiconductor International
Thermal Resistance, Junction-to-Case -- 1.44 °C/W
Thermal Resistance, Junction-to-Ambient * -- 40 °C/W
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W
Rev. A2, December 2000
FQB10N20L / FQI10N20L
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
DSS
/ ∆T
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
J
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
= 0 V, ID = 250 µA
V
GS
I
= 250 µA, Referenced to 25°C
D
V
= 200 V, VGS = 0 V
DS
V
= 160 V, TC = 125°C
DS
V
= 20 V, VDS = 0 V
GS
= -20 V, VDS = 0 V
V
GS
200 -- -- V
-- 0.18 -- V/°C
-- -- 1 µA
-- -- 10 µA
-- -- 100 nA
-- -- -100 nA
On Characteristics
V
R
g
FS
GS(th)
DS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
= VGS, ID = 250 µA
DS
V
= 10 V, ID = 5.0 A
GS
= 5 V, ID = 5.0 A
V
GS
V
= 30 V, ID = 5.0 A
DS
(Note 4)
1.0 -- 2.0 V
0.29
--
0.3
0.36
0.38
-- 10.7 -- S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance -- 95 125 pF
Reverse Transfer Capacitance -- 14 18 pF
= 25 V, VGS = 0 V,
V
DS
f = 1.0 MHz
-- 640 830 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Turn-On Rise Time -- 150 310 ns
Turn-Off Delay Time -- 50 110 ns
Turn-Off Fall Time -- 95 200 ns
Total Gate Charge
Gate-Source Charge -- 2.4 -- nC
Gate-Drain Charge -- 6.1 -- nC
= 100 V, ID = 10 A,
V
DD
= 25 Ω
R
G
= 160 V, ID = 10 A,
V
DS
V
GS
= 5 V
(Note 4, 5)
(Note 4, 5)
-- 13 35 ns
-- 13 17 nC
Ω
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 2.7mH, IAS = 10A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 10A, di/dt ≤ 300A/µs, VDD ≤ BV
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2000 Fairchild Semiconductor International
Maximum Continuous Drain-Source Diode Forward Current -- -- 10 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 40 A
= 0 V, IS = 10 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 0.57 -- µC
Starting TJ = 25°C
DSS,
V
GS
= 0 V, IS = 10 A,
V
GS
/ dt = 100 A/µs
dI
F
(Note 4)
-- -- 1.5 V
-- 120 -- ns
Rev. A2, December 2000
Typical Characteristics
FQB10N20L / FQI10N20L
V
GS
Top : 10 V
8.0 V
6.0 V
1
5.0 V
10
4.5 V
4.0 V
3.5 V
Botto m : 3.0 V
0
10
, Drain Current [A]
D
I
-1
10
-1
10
0
10
※
Notes :
1. 250μs Pulse Test
2. T
VDS, Drain-Source Voltage [V]
1.6
1.2
],
Ω
[
0.8
DS(on)
R
0.4
Drain-Source On-Resistance
0.0
0 5 10 15 20 25
VGS = 5V
VGS = 10V
ID , Drain Curren t [A]
※
= 25
C
10
Note : T
1
10
℃
1
℃
150
0
10
, Drain Current [A]
℃
D
25
I
℃
-55
-1
10
0246810
※
Notes :
1. V
= 30V
DS
2. 250μs Pulse Test
VGS, Gate-Source V oltage [V]
Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s
1
10
= 25
J
0
10
, Reverse Drain Current [A]
DR
℃
I
-1
10
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
℃
℃
150
25
※
Notes :
= 0V
1. V
GS
2. 250μs Pulse Tes t
VSD, Sou r c e -Drain v o ltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1500
1200
900
600
Capacitance [pF]
300
0
-1
10
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Ch a ra ct eristics
©2000 Fairchild Semiconductor International
C
C
C
C
iss
C
oss
C
rss
0
10
VDS, Drain-Source Voltage [V]
= Cgs + Cgd (Cds = shorted)
iss
= Cds + C
oss
gd
= C
rss
gd
※
Notes :
1. V = 0 V
2. f = 1 MH z
1
10
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
VDS = 40V
VDS = 100V
※
Note : I
= 10 A
D
Rev. A2, December 2000
12
10
8
6
4
, Gate-Source Voltage [V]
2
GS
V
0
0 4 8 12 16 20 24
VDS = 160V
QG, Tota l Gate Charge [n C]
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