Fairchild Semiconductor FQAF44N08 Datasheet

FQAF44N08

FQAF44N08

80V N-Channel MOSFET

August 2000

QFET

QFET

QFETQFET

TM

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, high
efficiency switching for DC/DC converters, and DC mo tor
control.

G

SD

Absolute Maximum Ratings T

Symbol Parameter FQAF44N08 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

T

, T

J

STG

T

L

Drain-Source Voltage 80 V
Drain Current

Drain Current - Pulsed
Gate-Source Voltage ± 25 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

Operating and Storage Temperature Range -55 to +175 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

- Continuous (T

- Continuous (T

- Derate above 25°C 0.56 W/°C

TO-3PF

FQAF Series

= 25°C unless otherwise noted

C

= 25°C)

C

= 100°C)

C

Features

• 35.6A, 80V, R

• Low gate charge ( typical 38 nC)

• Low Crss ( typical 90 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• 175°C maximum junction temperature rating

(Note 1)

(Note 2)
(Note 1)
(Note 1)
(Note 3)

= 0.034Ω @VGS = 10 V

DS(on)

D

!

!

"

"

"

"

!

!

"

!

!

G

"
"

"

!

!

S

35.6 A

25.2 A

142.4 A

450 mJ

35.6 A

8.3 mJ

6.5 V/ns
83 W

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJC

R

θJA

©2000 Fairchild Semiconductor International

Thermal Resistance, Junction-to-Case -- 1.8 °C/W
Thermal Resistance, Junction-to-Ambient -- 40 °C/W

Rev. A, August 2000

FQAF44N08

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 µA

V

GS

I

= 250 µA, Referenced to 25°C

D

V

= 80 V, VGS = 0 V

DS

V

= 64 V, TC = 150°C

DS

V

= 25 V, VDS = 0 V

GS

= -25 V, VDS = 0 V

V

GS

80 -- -- V

-- 0.07 -- V/°C

-- -- 1 µA

-- -- 10 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

V

= VGS, ID = 250 µA

DS

= 10 V, ID = 17.8 A

V

GS

= 30 V, ID = 17.8 A

V

DS

(Note 4)

2.0 -- 4.0 V

-- 0.026 0.034 Ω

-- 22 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 400 520 pF
Reverse Transfer Capacitance -- 90 120 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 1100 1430 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Turn-On Rise Time -- 170 350 ns
Turn-Off Delay Time -- 40 90 ns
Turn-Off Fall Time -- 75 160 ns
Total Gate Charge
Gate-Source Charge -- 7.5 -- nC
Gate-Drain Charge -- 18 -- nC

= 40 V, ID = 44 A,

V

DD

= 25 Ω

R

G

V

= 64 V, ID = 44 A,

DS

V

GS

= 10 V

(Note 4, 5)

(Note 4, 5)

-- 15 40 ns

-- 38 50 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 0.49mH, IAS = 35.6A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 44A, di/dt ≤ 300A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

©2000 Fairchild Semiconductor International

Maximum Continuous Drain-Source Diode Forward Current -- -- 35.6 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 142.4 A

= 0 V, IS = 35.6 A

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 160 -- nC

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = 44 A,

V

GS

/ dt = 100 A/µs

dI

F

-- -- 1.5 V

-- 67 -- ns

(Note 4)

Rev. A, August 2000

Typical Characteristics

V

2

Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V
Bottom : 4.5 V

1

0

-1

10

GS

※

Notes :

1. 250μs Pulse Test

℃

2. TC = 25

0

10

1

10

10

FQAF44N08

10

, Drain Current [A]

D

I

10

VDS, Drain-Source Voltage [V]

2

10

1

10

℃

175

℃

25

0

10

, Drain Current [A]

D

I

-1

10

246810

VGS, Gate-Source Voltage [V]

℃

-55

※

Notes :

1. V

= 30V

DS

2. 250μs Pulse Test

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

0.12

0.10

0.08

],

Ω

[

0.06

DS(on)

R

VGS = 10V

VGS = 20V

0.04

Drain-Source On-Resistance

0.02

0.00
0 306090120150180

※

Note : T

ID , Drain Current [A]

2

10

1

10

0

10

℃

175

, Reverse Drain Current [A]

DR

℃

= 25

J

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

25

VSD, Sou r c e-Dra in volta g e [V]

℃

※

Notes :

1. V

= 0V

GS

2. 250μs Pulse Tes t

Figure 3. On-Resistan ce Vari ation vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

3000

2500

2000

1500

1000

Capacitance [pF]

500

0

-1

10

VDS, Drain-Source Voltage [V]

C

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

C

oss

gd

C

= C

rss

gd

※

Notes :

= 0 V

1. V

10

1

GS

2. f = 1 M Hz

C

iss

C

oss

C

rss

0

10

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 10203040

QG, Tota l Gate Charg e [nC]

VDS = 40V

VDS = 64V

※

Note : I

Figure 5. Capacitance C haracteristics Figure 6. Gate Charge Characteristics

D

= 44A

Rev. A, August 2000©2000 Fairchild Semiconductor International