Fairchild Semiconductor FQA7N90M Datasheet
FQA7N90M
900V N-Channel MOSFET
FQA7N90M
January 2002
TM
QFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
Features
• 7A, 900V, R
• Low gate charge ( typical 40 nC)
• Low Crss ( typical 17 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
= 1.8Ω @VGS = 10 V
DS(on)
suited for high efficiency switch mode power supplies..
D
!!!!
!!!!
●●●●
●●●●
◀◀◀◀
◀◀◀◀
▲▲▲▲
▲▲▲▲
●●●●
●●●●
●●●●
●●●●
!!!!
!!!!
S
TO-3P
GSD
FQA Series
Absolute Maximum Ratings T
= 25°C unless otherwise noted
C
!!!!
!!!!
G
Symbol Parameter FQA7N90M Units
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
Drain-Source Voltage 900 V
Drain Current
- Continuous (T
- Continuous (T
Drain Current - Pulsed
= 25°C)
C
= 100°C)
C
(Note 1)
7.0 A
4.4 A
28 A
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (TC = 25°C)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
780 mJ
6.4 A
21 mJ
4.0 V/ns
210 W
- Derate above 25°C 1.69 W/°C
T
, T
J
STG
T
L
Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300 °C
Thermal Characteristics
Symbol Parameter Typ Max Units
R
θJC
R
θCS
R
θJA
©2002 Fairchild Semiconductor Corporation
Thermal Resistance, Junction-to-Case -- 0.59 °C/W
Thermal Resistance, Case-to-Sink 0.24 -- °C/W
Thermal Resistance, Junction-to-Ambient -- 40 °C/W
Rev. A, January 2002
FQA7N90M
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
DSS
/ ∆T
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
J
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
= 0 V, ID = 250 µA
V
GS
I
= 250 µA, Referenced to 25°C
D
V
= 900 V, VGS = 0 V
DS
V
= 720 V, TC = 125°C
DS
V
= 30 V, VDS = 0 V
GS
= -30 V, VDS = 0 V
V
GS
900 -- -- V
-- 0.96 -- V/°C
-- -- 10 µA
-- -- 100 µA
-- -- 100 nA
-- -- -100 nA
On Characteristics
V
R
g
FS
GS(th)
DS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
= VGS, ID = 250 µA
DS
= 10 V, ID = 3.5 A
V
GS
= 50 V, ID = 3.5 A
V
DS
(Note 4)
3.0 -- 5.0 V
-- 1.5 1.8 Ω
-- 5.7 -- S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance -- 140 185 pF
Reverse Transfer Capacitance -- 17 23 pF
= 25 V, VGS = 0 V,
V
DS
f = 1.0 MHz
-- 1440 1880 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Turn-On Rise Time -- 80 170 ns
Turn-Off Delay Time -- 95 200 ns
Turn-Off Fall Time -- 55 120 ns
Total Gate Charge
Gate-Source Charge -- 8.5 -- nC
Gate-Drain Charge -- 20 -- nC
= 450 V, ID = 7.0 A,
V
DD
= 25 Ω
R
G
V
= 720 V, ID = 7.0 A,
DS
V
GS
= 10 V
(Note 4, 5)
(Note 4, 5)
-- 35 80 ns
-- 40 52 nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 30mH, IAS = 7.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 7.0A, di/dt ≤ 200A/µs, VDD ≤ BV
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2002 Fairchild Semiconductor Corporation
Maximum Continuous Drain-Source Diode Forward Current -- -- 6.4 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 25.6 A
= 0 V, IS = 7.0 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 4.3 -- µC
Starting TJ = 25°C
DSS,
V
GS
= 0 V, IS = 7.0 A,
V
GS
/ dt = 100 A/µs
dI
F
-- -- 1.4 V
-- 400 -- ns
(Note 4)
Rev. A, January 2002
Typical Characteristics
FQA7N90M
V
GS
Top : 1 5 .0 V
10.0 V
1
10
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
0
10
-1
, Drain Current [A]
10
D
I
-2
10
-1
10
0
10
※
Note s :
1. 250μs Pulse Test
℃
2. T
= 25
C
1
10
VDS, Drain-Source Voltage [V]
4
3
[Ω],
2
DS(ON)
R
1
VGS = 10V
VGS = 20V
Drain-Source On-R esistance
※
Note : T
0
0 5 10 15 20
ID, Drain Current [A]
1
10
0
10
, Dra in C u rre n t [A ]
D
I
-1
10
246810
℃
150
℃
25
-55
※
Note s :
1. V
= 50V
DS
2. 250μs Pulse Test
℃
VGS, Gate-Source Voltage [V]
Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s
1
10
℃
= 25
J
0
10
, Reverse Drain Current [A]
DR
I
-1
10
0.2 0.4 0.6 0.8 1.0 1.2 1.4
℃
150
℃
25
※
Note s :
= 0V
1. V
GS
2. 250μs Pulse Tes t
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
VDS = 180V
VDS = 450V
VDS = 720V
※
Note : I
= 7.0A
D
3000
2500
2000
1500
1000
Capacitance [pF]
500
0
-1
10
VDS, Drain-Source Voltage [V]
C
= Cgs + Cgd (Cds = shorted)
iss
C
= Cds + C
oss
gd
C
= C
rss
gd
C
iss
C
oss
※
Notes :
1. V
= 0 V
GS
10
2. f = 1 MHz
1
C
rss
0
10
12
10
8
6
4
, Ga te -S o u rc e V o lta g e [V]
2
GS
V
0
0 5 10 15 20 25 30 35 40 45
QG, Tota l Gate Charge [n C]
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Ch a ra ct eristics
©2002 Fairchild Semiconductor Corporation Rev. A, January 2002
Loading...