Fairchild Semiconductor FQA6N70 Datasheet

FQA6N70

700V N-Channel MOSFET

December 2000

QFET

QFET

QFETQFET

FQA6N70

TM

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize
on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation modes. These devices are
well suited for high efficiency switch mode power supply.

G

SD

Absolute Maximum Ratings T

Symbol Parameter FQA6N70 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

T

, T

J

STG

T

L

Drain-Source Voltage 700 V
Drain Current

Drain Current - Pulsed
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

- Continuous (T

- Continuous (T

- Derate above 25°C 1.22 W/°C

TO-3P

FQA Series

= 25°C unless otherwise noted

C

= 25°C)

C

= 100°C)

C

Features

• 6.4A, 700V, R

• Low gate charge ( typical 30 nC)

• Low Crss ( typical 15 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

G

(Note 1)

(Note 2)
(Note 1)
(Note 1)
(Note 3)

= 1.5 Ω @ VGS = 10 V

DS(on)

D

!

!

"

"

"

"

!

!

"

!

!

"
"

"

!

!

S

6.4 A

4.05 A

25.6 A

600 mJ

6.4 A

15.2 mJ

4.5 V/ns

152 W

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJC

R

θCS

R

θJA

©2000 Fairchild Semiconductor International

Thermal Resistance, Junction-to-Case -- 0.82 °C/W
Thermal Resistance, Case-to-Sink 0.24 -- °C/W
Thermal Resistance, Junction-to-Ambient -- 40 °C/W

Rev. A2, December 2000

FQA6N70

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV
∆BV
/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage

DSS

Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 µA

V

GS

I

= 250 µA, Referenced to 25°C

D

V

= 700 V, VGS = 0 V

DS

V

= 560 V, TC = 125°C

DS

V

= 30 V, VDS = 0 V

GS

= -30 V, VDS = 0 V

V

GS

700 -- -- V

-- 0.78 -- V/°C

-- -- 10 µA

-- -- 100 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

V

= VGS, ID = 250 µA

DS

= 10 V, ID = 3.2 A

V

GS

= 50 V, ID = 3.2 A

V

DS

(Note 4)

3.0 -- 5.0 V

-- 1.16 1.5 Ω

-- 6.4 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 125 150 pF

V

= 25 V, VGS = 0 V,

DS

f = 1.0 MHz

Reverse Transfer Capacitance -- 15 120 pF

-- 1100 1400 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

Turn-On Delay Time
Turn-On Rise Time -- 70 150 ns

= 350 V, ID = 6.2 A,

V

DD

R

= 25 Ω

G

Turn-Off Delay Time -- 55 120 ns
Turn-Off Fall Time -- 50 110 ns

g
gs
gd

Total Gate Charge
Gate-Source Charge -- 6.5 -- nC
Gate-Drain Charge -- 13 -- nC

V

= 560 V, ID = 6.2 A,

DS

V

= 10 V

GS

(Note 4, 5)

(Note 4, 5)

-- 25 60 ns

-- 30 40 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 27.2mH, IAS = 6.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 6.2A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

©2000 Fairchild Semiconductor International

Maximum Continuous Drain-Source Diode Forward Current -- -- 6.4 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 25.6 A

= 0 V, IS = 6.4 A

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 2.7 -- µC

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = 6.2 A,

V

GS

/ dt = 100 A/µs

dI

F

-- -- 1.4 V

-- 340 -- ns

(Note 4)

Rev. A2, December 2000

Typical Characteristics

FQA6N70

V

GS

Top : 1 5 .0 V

10.0 V

1

8.0 V

10

7.0 V

6.5 V

6.0 V
Bottom : 5.5 V

0

10

, Dra in Curre n t [A ]

D

I

-1

10

-1

10

0

10

※

Note s :

1. 250μs Pulse Test

℃

2. T

= 25

C

1

10

VDS, Drain-Source Voltage [V]

4

3

],

Ω

[

2

DS(ON)

R

1

VGS = 10V

VGS = 20V

Drain-Source On-Resistance

※

℃

Note : T

= 25

0

048121620

J

ID, Drain Current [A]

1

10

℃

150

0

10

, Drain Current [A]

D

I

-1

10

246810

℃

25

℃

-55

※

Note s :

= 50V

1. V

DS

2. 250μs Pulse Test

VGS , Ga te- S ou rc e V olta ge [V ]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

1

10

0

10

℃

, Reverse Drain Current [A]

DR

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4

150

℃

25

※

Note s :

= 0V

1. V

GS

2. 250μs Pulse Test

VSD , Source-Drain Voltage [V]

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

2000

1600

1200

800

Capacitance [pF]

400

0

-1

10

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Ch a ra ct eristics

©2000 Fairchild Semiconductor International

C
C
C

C

iss

C

oss

C

rss

0

10

VDS, Drain-Source Voltage [V]

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

oss

gd

= C

rss

gd

※

Note s :

1. V

= 0 V

GS

2. f = 1 MHz

1

10

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current and

Temperature

VDS = 140V

VDS = 350V

VDS = 560V

※

Note : I

= 6.2 A

D

Rev. A2, December 2000

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 5 10 15 20 25 30

QG, Total Gate Charge [nC]