Fairchild Semiconductor FQA65N06 Datasheet

FQA65N06

60V N-Channel MOSFET

FQA65N06

May 2001

TM

QFET

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, DC/

Features

• 72A, 60V, R

• Low gate charge ( typical 48 nC)

• Low Crss ( typical 100 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• 175°C maximum junction temperature rating

= 0.016Ω @VGS = 10 V

DS(on)

DC converters, and high efficiency switching for power
management in portable and battery operated products.

D

!

!

"

"

"

"

!

!

"

"
"

"

!

!

S

G

SD

Absolute Maximum Ratings T

TO-3P

FQA Series

= 25°C unless otherwise noted

C

!

!

G

Symbol Parameter FQA65N06 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

Drain-Source Voltage 60 V
Drain Current

- Continuous (T

- Continuous (T

Drain Current - Pulsed

= 25°C)

C

= 100°C)

C

(Note 1)

72 A
51 A

288 A
Gate-Source Voltage ± 25 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

(Note 2)
(Note 1)
(Note 1)
(Note 3)

665 mJ

72 A

18.3 mJ

7.0 V/ns

183 W

- Derate above 25°C 1.22 W/°C

T

, T

J

STG

T

L

Operating and Storage Temperature Range -55 to +175 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJC

R

θCS

R

θJA

©2001 Fairchild Semiconductor Corporation Rev. A1. May 2001

Thermal Resistance, Junction-to-Case -- 0.82 °C/W
Thermal Resistance, Case-to-Sink 0.24 -- °C/W
Thermal Resistance, Junction-to-Ambient -- 40 °C/W

FQA65N06

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV
∆BV
/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage

DSS

Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 µA

V

GS

I

= 250 µA, Referenced to 25°C

D

V

= 60 V, VGS = 0 V

DS

V

= 48 V, TC = 150°C

DS

V

= 25 V, VDS = 0 V

GS

= -25 V, VDS = 0 V

V

GS

60 -- -- V

-- 0.07 -- V/°C

-- -- 1 µA

-- -- 10 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

V

= VGS, ID = 250 µA

DS

= 10 V, ID =36 A

V

GS

= 25 V, ID = 36 A

V

DS

(Note 4)

2.0 -- 4.0 V

-- 0.012 0.016 Ω

-- 52 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 700 910 pF
Reverse Transfer Capacitance -- 100 130 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 1850 241 0 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Turn-On Rise Time -- 160 330 ns
Turn-Off Delay Time -- 90 190 ns
Turn-Off Fall Time -- 105 2 2 0 n s
Total Gate Charge
Gate-Source Charge -- 12 -- nC
Gate-Drain Charge -- 19.5 -- nC

= 30 V, ID = 32.5 A,

V

DD

= 25 Ω

R

G

V

= 48 V, ID = 65 A,

DS

V

GS

= 10 V

(Note 4, 5)

(Note 4, 5)

-- 20 50 ns

-- 48 65 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 150µH, IAS = 72A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 65A, di/dt ≤ 300A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Maximum Continuous Drain-Source Diode Forward Current -- -- 72 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 288 A

= 0 V, IS = 72 A

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 110 - - nC

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = 65 A,

V

GS

/ dt = 100 A/µs

dI

F

-- -- 1.5 V

-- 62 -- ns

(Note 4)

Rev. A1. May 2001©2001 Fairchild Semiconductor Corporation

Typical Characteristics

FQA65N06

],

$

[m

R

10

10

, Drain Current [A]

D

I

10

V
Top : 15.0 V

10.0 V

8.0 V

2

7.0 V

6.0 V

5.5 V

5.0 V
Botto m : 4.5 V

1

0

-1

10

GS

10

VDS, Drain-Source Voltage [V]

!

Note s :

1. 250#s Pulse Test

"

= 25

2. T

C

0

2

10

1

10

1

10

"

175

, Drain Current [A]

D

I

"

25

0

10

246810

VGS, Gate-Source Voltage [V]

!

Note s :

= 25V

1. V

DS

#

s Pulse Test

"

-55

2. 250

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

30

25

20

VGS = 10V

2

10

VGS = 20V

15

DS(ON)

10

1

10

5

Drain-Source On-Resistance

0

0 50 100 150 200 250 300

!

Note : T

ID, Drain Current [A]

Figure 3. On-Resistance Variati on vs.

Drain Current and Gate Voltage

"

= 25

J

, Reverse Drain Current [A]

DR

I

10

"

175

0

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

"

25

!

1. V

2. 250#s Pulse Test

VSD, Source-Drain voltage [V]

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

VDS = 30V

VDS = 48V

Capacitance [pF]

5000

4000

3000

2000

1000

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

gd

C

= C

rss

gd

C

oss

!

10

1. V

2. f = 1 MHz

1

Notes :

= 0 V

GS

C

iss

C

rss

0

-1

10

0

10

VDS, Drain-Source Voltage [V]

12

10

8

6

4

2

, Gate-Source Voltage [V]

GS

V

0

0 1020304050

QG, Total Gate Charge [nC]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Ch a ra ct eristics

Note s :

!

= 0V

GS

Note : I

D

= 65A

©2001 Fairchild Semiconductor Corporation Rev. A1. May 2001