Fairchild Semiconductor FQA58N08 Datasheet

FQA58N08

80V N-Channel MOSFET

December 2000

QFET

QFET

QFETQFET

FQA58N08

TM

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize
on-state resistance, provide superior switching
performance, and withstand a high energy pulse in the
avalanche and commutation modes. These devices are
well suited for low voltage applications such as automotive,
high efficiency switching for DC/DC converters, and DC
motor control.

G

SD

Absolute Maximum Ratings T

Symbol Parameter FQA58N08 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

T

, T

J

STG

T

L

Drain-Source Voltage 80 V
Drain Current

Drain Current - Pulsed
Gate-Source Voltage ± 25 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

Operating and Storage Temperature Range -55 to +175 °C
Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

- Continuous (T

- Continuous (T

- Derate above 25°C 1.2 W/°C

TO-3P

FQA Series

= 25°C unless otherwise noted

C

= 25°C)

C

= 100°C)

C

Features

• 64A, 80V, R

• Low gate charge ( typical 50 nC)

• Low Crss ( typical 120 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• 175°C maximum junction temperature rating

G

(Note 1)

(Note 2)
(Note 1)
(Note 1)
(Note 3)

= 0.024Ω @VGS = 10 V

DS(on)

D

!

!

"

"

"

"

!

!

"

!

!

"
"

"

!

!

S

64 A

45.2 A
256 A

560 mJ

64 A
18 mJ

6.5 V/ns

180 W

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJC

R

θCS

R

θJA

©2000 Fairchild Semiconductor International

Thermal Resistance, Junction-to-Case -- 0.83 °C/W
Thermal Resistance, Case-to-Sink 0.24 -- °C/W
Thermal Resistance, Junction-to-Ambient -- 40 °C/W

Rev. A2, December 2000

FQA58N08

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV
∆BV
/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage

DSS

Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 µA

V

GS

I

= 250 µA, Referenced to 25°C

D

V

= 80 V, VGS = 0 V

DS

V

= 64 V, TC = 150°C

DS

V

= 25 V, VDS = 0 V

GS

= -25 V, VDS = 0 V

V

GS

80 -- -- V

-- 0.07 -- V/°C

-- -- 1 µA

-- -- 10 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

V

= VGS, ID = 250 µA

DS

= 10 V, ID = 32 A

V

GS

= 30 V, ID = 32 A

V

DS

(Note 4)

2.0 -- 4.0 V

-- 0.018 0.024 Ω

-- 34 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 520 680 pF
Reverse Transfer Capacitance -- 120 155 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 1450 1900 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Turn-On Rise Time -- 200 410 ns
Turn-Off Delay Time -- 70 150 ns
Turn-Off Fall Time -- 95 200 ns
Total Gate Charge
Gate-Source Charge -- 9.3 -- nC
Gate-Drain Charge -- 25 -- nC

= 40 V, ID = 57.5 A,

V

DD

= 25 Ω

R

G

V

= 64 V, ID = 57.5 A,

DS

V

GS

= 10 V

(Note 4, 5)

(Note 4, 5)

-- 16.5 45 ns

-- 50 65 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 0.187mH, IAS = 64A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 57.5A, di/dt ≤ 300A/µs, V

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

©2000 Fairchild Semiconductor International

Maximum Continuous Drain-Source Diode Forward Current -- -- 64 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 256 A

= 0 V, IS = 64 A

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 185 -- nC

≤ BV

DD

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = 57.5 A,

V

GS

/ dt = 100 A/µs

dI

F

-- -- 1.5 V

-- 73 -- ns

(Note 4)

Rev. A2, December 2000

Typical Characteristics

FQA58N08

V

GS

Top : 15.0 V

10.0 V

2

10

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V
Bottom : 4.5 V

1

10

, Drain Current [A]

D

I

0

10

-1

10

0

10

※

1. 250μs Pulse Te st

2. TC = 25

VDS, Drain - S ou r ce V o lta g e [V ]

100

80

],

Ω

60

[m

DS(ON)

40

R

Drain-Source On-Resistance

20

0

0 50 100 150 200 250

VGS = 10V

VGS = 20V

ID , Drain Curren t [A ]

Notes :

※

10

Note : T

2

10

1

10

℃

175

℃

25

0

10

, Drain Current [A]

D

I

℃

1

-1

10

246810

℃

-55

※

Notes :

1. V

= 30V

DS

2. 250μs Pulse Test

VGS, Gate-Source V oltage [V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

2

10

1

10

0

10

, Reverse Drain Current [A]

DR

℃

= 25

J

I

10

℃

175

-1

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

℃

25

※

Notes :

= 0V

1. V

GS

2. 250μs Pulse Test

VSD, Sou r c e-Drain voltage [V]

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

VDS = 40V

VDS = 64V

※

Note : I

4500

4000

3500

3000

2500

2000

1500

Capacitance [pF]

1000

500

0

-1

10

C

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

C

oss

gd

C

= C

rss

gd

※

Notes :

C

iss

C

oss

C

rss

0

10

1. V

2. f = 1 MHz

1

10

= 0 V

GS

VDS, Drain-Source Voltage [V]

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 102030405060

QG, Tota l Gate Charge [n C]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Ch a ra ct eristics

= 57.5A

D

Rev. A2, December 2000©2000 Fairchild Semiconductor International