Fairchild Semiconductor FQA28N50F Datasheet
FQA28N50F
500V N-Channel MOSFET
FQA28N50F
September 2001
TM
FRFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies,
Features
• 28.4A, 500V, R
• Low gate charge ( typical 110 nC)
• Low Crss ( typical 60 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Fast recovery body diode ( max, 250ns )
= 0.16Ω @VGS = 10 V
DS(on)
where the body diode is used such as phase-shift ZVS,
basic full-bridge topology.
D
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S
G
SD
Absolute Maximum Ratings T
TO-3P
FQA Series
= 25°C unless otherwise noted
C
!
!
G
Symbol Parameter FQA28N50F Units
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
Drain-Source Voltage 500 V
Drain Current
- Continuous (T
- Continuous (T
Drain Current - Pulsed
= 25°C)
C
= 100°C)
C
(Note 1)
28.4 A
18 A
113.6 A
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (TC = 25°C)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
1300 mJ
28.4 A
31 mJ
17 V/ns
310 W
- Derate above 25°C 2.5 W/°C
T
, T
J
STG
T
L
Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300 °C
Thermal Characteristics
Symbol Parameter Typ Max Units
R
θJC
R
θCS
R
θJA
©2001 Fairchild Semiconductor Corporation
Thermal Resistance, Junction-to-Case -- 0.4 °C/W
Thermal Resistance, Case-to-Sink 0.24 -- °C/W
Thermal Resistance, Junction-to-Ambient -- 40 °C/W
Rev. A2, September 2001
FQA28N50F
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
DSS
/ ∆T
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
J
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
= 0 V, ID = 250 µA
V
GS
I
= 250 µA, Referenced to 25°C
D
V
= 500 V, VGS = 0 V
DS
V
= 400 V, TC = 125°C
DS
V
= 30 V, VDS = 0 V
GS
= -30 V, VDS = 0 V
V
GS
500 -- -- V
-- 0.5 -- V/°C
-- -- 50 µA
-- -- 500 µA
-- -- 100 nA
-- -- -100 nA
On Characteristics
V
R
g
FS
GS(th)
DS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
= VGS, ID = 250 µA
DS
= 10 V, ID = 14.2 A
V
GS
= 50 V, ID = 14.2 A
V
DS
(Note 4)
3.0 -- 5.0 V
-- 0.126 0.16 Ω
-- 28 -- S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance -- 640 830 pF
Reverse Transfer Capacitance -- 60 80 pF
= 25 V, VGS = 0 V,
V
DS
f = 1.0 MHz
-- 4300 5600 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Turn-On Rise Time -- 290 590 ns
Turn-Off Delay Time -- 250 510 ns
Turn-Off Fall Time -- 175 360 n s
Total Gate Charge
Gate-Source Charge -- 32 -- nC
Gate-Drain Charge -- 59 -- nC
= 250 V, ID = 28.4 A,
V
DD
= 25 Ω
R
G
V
= 400 V, ID = 28.4 A,
DS
V
GS
= 10 V
(Note 4, 5)
(Note 4, 5)
-- 100 210 ns
-- 110 140 nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 2.9mH, IAS = 28.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 28.4A, di/dt ≤ 350A/µs, VDD ≤ BV
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2001 Fairchild Semiconductor Corporation
Maximum Continuous Drain-Source Diode Forward Current -- -- 28.4 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 113.6 A
= 0 V, IS = 28.4 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 1.2 -- µC
Starting TJ = 25°C
DSS,
V
GS
= 0 V, IS = 28.4 A,
V
GS
/ dt = 100 A/µs
dI
F
-- -- 1.4 V
-- -- 250 ns
(Note 4)
Rev. A2, September 2001
Typical Characteristics
FQA28N50F
2
10
1
10
, Dra in Current [A ]
D
I
0
10
10
V
Top : 1 5 .0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
-1
GS
※
Note s :
1. 250μs Pulse Test
2. T
0
10
10
VDS, Drain -S o u rce V o ltag e [V ]
0.5
0.4
],
Ω
0.3
[
DS(on)
R
0.2
Drain-Source On-Resistance
0.1
0.0
0 20 40 60 80 100 120 140
VGS = 10V
VGS = 20V
※
ID , Drain Cur rent [A]
= 25
C
1
Note : T
2
10
1
10
0
10
, Drain Current [A]
D
I
℃
-1
10
246810
℃
150
℃
25
℃
-55
※
Note s :
= 50V
1. V
DS
2. 250μs Pulse Test
VGS , Gate-Source Voltage [V]
Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s
2
10
1
10
0
10
, Reverse Drain Current [A]
DR
I
℃
= 25
J
-1
10
0.2 0.4 0.6 0.8 1.0 1.2 1.4
℃
150
VSD , Source-Drain Voltage [V]
℃
25
※
Note s :
= 0V
1. V
GS
2. 250μs Pulse Test
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
9000
7500
6000
4500
3000
Capacitance [pF]
1500
0
-1
10
VDS, Drain-Source Voltage [V]
C
= Cgs + Cgd (Cds = shorted)
iss
C
= Cds + C
oss
gd
C
= C
rss
gd
C
iss
C
oss
※
Note s :
1. V
= 0 V
10
1
GS
2. f = 1 MHz
C
rss
0
10
12
10
8
6
4
, Gate-Source Voltage [V]
GS
2
V
0
020406080100120
QG, Tota l G a te C h a rg e [n C ]
VDS = 100V
VDS = 250V
VDS = 400V
※
Note : I
= 28.4 A
D
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Ch a ra ct eristics
©2001 Fairchild Semiconductor Corporation Rev. A2, September 2001
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