Fairchild Semiconductor FQA24N50F Datasheet
FQA24N50F
500V N-Channel MOSFET
FQA24N50F
September 2001
TM
FRFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies,
Features
• 24A, 500V, R
• Low gate charge ( typical 90 nC)
• Low Crss ( typical 55 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Fast recovery body diode ( max, 250ns )
= 0.2Ω @VGS = 10 V
DS(on)
where the body diode is used such as phase-shift ZVS,
basic full-bridge topology.
D
!
!
"
"
"
"
!
!
"
"
"
"
!
!
S
G
SD
Absolute Maximum Ratings T
TO-3P
FQA Series
= 25°C unless otherwise noted
C
!
!
G
Symbol Parameter FQA24N50F Units
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
Drain-Source Voltage 500 V
Drain Current
- Continuous (T
- Continuous (T
Drain Current - Pulsed
= 25°C)
C
= 100°C)
C
(Note 1)
24 A
15.2 A
96 A
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (TC = 25°C)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
1100 mJ
24 A
29 mJ
15 V/ns
290 W
- Derate above 25°C 2.33 W/°C
T
, T
J
STG
T
L
Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300 °C
Thermal Characteristics
Symbol Parameter Typ Max Units
R
θJC
R
θCS
R
θJA
©2001 Fairchild Semiconductor Corporation
Thermal Resistance, Junction-to-Case -- 0.43 °C/W
Thermal Resistance, Case-to-Sink 0.24 -- °C/W
Thermal Resistance, Junction-to-Ambient -- 40 °C/W
Rev. A2, September 2001
FQA24N50F
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
DSS
/ ∆T
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
J
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
= 0 V, ID = 250 µA
V
GS
I
= 250 µA, Referenced to 25°C
D
V
= 500 V, VGS = 0 V
DS
V
= 400 V, TC = 125°C
DS
V
= 30 V, VDS = 0 V
GS
= -30 V, VDS = 0 V
V
GS
500 -- -- V
-- 0.53 -- V/°C
-- -- 50 µA
-- -- 500 µA
-- -- 100 nA
-- -- -100 nA
On Characteristics
V
R
g
FS
GS(th)
DS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
= VGS, ID = 250 µA
DS
= 10 V, ID = 12 A
V
GS
= 50 V, ID = 12 A
V
DS
(Note 4)
3.0 -- 5.0 V
-- 0.156 0.2 Ω
-- 22 -- S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance -- 520 670 pF
Reverse Transfer Capacitance -- 55 70 pF
= 25 V, VGS = 0 V,
V
DS
f = 1.0 MHz
-- 3500 4500 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Turn-On Rise Time -- 250 500 ns
Turn-Off Delay Time -- 200 400 n s
Turn-Off Fall Time -- 155 32 0 n s
Total Gate Charge
Gate-Source Charge -- 23 -- nC
Gate-Drain Charge -- 52 -- nC
= 250 V, ID = 24 A,
V
DD
= 25 Ω
R
G
V
= 400 V, ID = 24 A,
DS
V
GS
= 10 V
(Note 4, 5)
(Note 4, 5)
-- 80 170 ns
-- 90 120 nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 3.4mH, IAS = 24A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 24A, di/dt ≤ 350A/µs, VDD ≤ BV
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2001 Fairchild Semiconductor Corporation
Maximum Continuous Drain-Source Diode Forward Current -- -- 24 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 96 A
= 0 V, IS = 24 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 1.1 -- µC
Starting TJ = 25°C
DSS,
V
GS
= 0 V, IS = 24 A,
V
GS
/ dt = 100 A/µs
dI
F
-- -- 1.4 V
-- -- 250 ns
(Note 4)
Rev. A2, September 2001
Typical Characteristics
FQA24N50F
V
GS
Top : 1 5 V
10 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
1
10
, Dra in Curre n t [A ]
D
I
0
10
-1
10
0
10
※
Notes :
1. 250μs Pulse Test
2. T
10
VDS , Drain -S o u rc e Vo lta g e [V ]
0.6
0.5
0.4
[Ω],
0.3
DS(on)
R
0.2
Drain-Source On-Resistance
0.1
0.0
0 20 40 60 80 100 120
VGS = 10V
VGS = 20V
※
ID , Drai n Curren t [A]
= 25
C
1
Note : T
1
10
0
10
, Dra in C u rr en t [A ]
D
I
℃
-1
10
246810
℃
150
℃
25
℃
-55
※
Notes :
1. V
= 50V
DS
2. 250μs Pulse Test
VGS , Gate-Source Voltage [V]
Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s
1
10
0
10
, Reverse Drain Current [A]
I
℃
= 25
J
℃
150
DR
-1
10
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
℃
25
※
Note s :
1. V
= 0V
GS
2. 250μs Pulse Te st
VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
7000
6000
5000
4000
3000
Capacitance [pF]
2000
1000
0
-1
10
VDS, Drain-Source Voltage [V]
C
= Cgs + Cgd (Cds = shorted)
iss
= Cds + C
C
oss
gd
C
= C
rss
gd
C
iss
C
oss
※
10
1. V
2. f = 1 MHz
1
Note s :
= 0 V
GS
C
rss
0
10
12
10
8
6
4
, Gate-Source Voltage [V]
GS
2
V
0
0 20406080100
QG, Tota l G a te C h a rg e [n C ]
VDS = 100V
VDS = 250V
VDS = 400V
※
Note : I
= 24 A
D
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Ch a ra ct eristics
©2001 Fairchild Semiconductor Corporation Rev. A2, September 2001
Loading...