Fairchild Semiconductor FQA11N90C DATA SHEET

FQA11N90C

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900V N-Channel MOSFET

FQA11N90C 900V N-Channel MOSFET

September 2006

®

QFET

Features

• 11A, 900V, R

• Low gate charge ( typical 60 nC)

• Low Crss ( typical 23pF)

•Fast switching

• 100% avalanche tested

• Improved dv/dt capability

= 1.1Ω @VGS = 10 V

DS(on)

GSD

TO-3P

FQA Series

Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.

D

G

S

Absolute Maximum Ratings

Symbol Parameter FQA11N90C Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt

P

D

, T

T

J

STG

T

L

Drain-Source Voltage 900 V

Drain Current - Continuous (TC = 25°C) 11.0 A

- Continuous (T

Drain Current - Pulsed
Gate-Source Voltage ± 30 V

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Power Dissipation (TC = 25°C) 300 W

- Derate above 25°C 2.38 W/°C

Operating and Storage Temperature Range -55 to +150 °C

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

= 100°C) 6.9 A

C

(Note 1)

(Note 2)

(Note 1)

(Note 1)

(Note 3)

44.0 A

960 mJ

11. 0 A

30 mJ

4.0 V/ns

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJC

R

θCS

R

θJA

©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FQA11N90C Rev. A1

Thermal Resistance, Junction-to-Case -- 0.42 °C/W
Thermal Resistance, Case-to-Sink 0.24 -- °C/W
Thermal Resistance, Junction-to-Ambient -- 40 °C/W

Package Marking and Ordering Information

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Device Marking Device Package Reel Size Tape Width Quantity

FQA11N90C FQA11N90C TO-3P -- -- 30

FQA11N90C FQA11N90C_F109 TO-3PN -- -- 30

FQA11N90C 900V N-Channel MOSFET

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

∆T

J

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

NOTES:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 15mH, IAS =11.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 11.0A, di/dt ≤200A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 900 -- -- V

/

Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 1.02 -- V/°C

Zero Gate Voltage Drain Current VDS = 900 V, VGS = 0 V -- -- 10 µA

= 720 V, TC = 125°C -- -- 100 µA

V

DS

Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA

Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA

Gate Threshold Voltage VDS = VGS, ID = 250 µA3.0--5.0V

Static Drain-Source On-Resistance VGS = 10 V, ID = 5.5 A -- 1.12 1.4 Ω

Forward Transconductance VDS = 50 V, ID = 5.5 A (Note 4) -- 9.0 -- S

Input Capacitance VDS = 25 V, VGS = 0 V,

Output Capacitance -- 215 280 pF

Reverse Transfer Capacitance -- 23 30 pF

f = 1.0 MHz

Turn-O n Delay Time VDD = 450 V, ID = 11.0A,

R

= 25 Ω

Turn-O n Rise Time --

Turn-Off Delay Time --

G

(Note 4, 5)

Turn-Off Fall Time --

Total Gate Charge VDS = 720 V, ID = 11.0A,

V

= 10 V

Gate-Source Charge --

Gate-Drain Charge --

GS

(Note 4, 5)

-- 2530 3290 pF

--

--

60 130

130 270

130 270

85 180

60 80

13

25

-- nC

-- nC

ns

ns

ns

ns

nC

Maximum Continuous Drain-Source Diode Forward Current -- -- 11.0 A

Maximum Pulsed Drain-Source Diode Forward Current -- -- 44.0 A

Drain-Source Diode Forward Voltage VGS = 0 V, IS =11.0 A -- -- 1.4 V

Reverse Recovery Time VGS = 0 V, IS = 11.0 A,

dI

/ dt = 100 A/µs (Note 4)

Reverse Recovery Charge -- 17.0 --

Starting TJ = 25°C

DSS,

F

-- 1000 -- ns

µC

FQA11N90C Rev. A1

2 www.fairchildsemi.com

Typical Performance Characteristics

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Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

V

GS

Top : 15.0 V

10.0 V

8.0 V

1

, Drain Current [A]

D

I

10

0

10

-1

10

10

7.0 V

6.5 V

6.0 V
Bottom : 5.5 V

-1

0

10

VDS, Drain-Source Voltage [ V]

Notes :※

1. 250µ s Pulse Test

= 25℃

2. T

C

1

10

1

10

150oC

25oC

0

10

, Drain Current [A]

D

I

-1

10

246810

VGS, Gate-Source Voltage [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

-55oC

Notes :※

1. VDS = 50V

2. 250µ s Pulse Test

FQA11N90C 900V N-Channel MOSFET

2.5

2.0

[Ω ],

1.5

DS(ON)

R

1.0

VGS = 10V

VGS = 20V

Drain-Source On-Resistance

0.5
0 5 10 15 20 25 30

ID, Dr ain Cur rent [ A]

Note : T※J = 25℃

1

10

0

10

, Reverse Drain Current [A]

DR

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4

150℃

VSD, Source-Drain voltage [V]

25℃

Notes :※

1. VGS = 0V

2. 250µ s Pulse Test

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

4500

4000

3500

3000

2500

2000

1500

Capacitance [pF]

1000

500

0

-1

10

C

iss

C

oss

C

rss

0

10

C

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

C

oss

gd

C

= C

rss

gd

Notes :※

1. VGS = 0 V

2. f = 1 MHz

1

10

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 10203040506070

VDS, Drain-Source Vol tage [ V]

VDS = 180V

VDS = 450V

VDS = 720V

Note : I※D = 11A

QG, Total Gate Charge [nC]

FQA11N90C Rev. A1

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