Fairchild Semiconductor FPNH10 Datasheet
FPNH10
g
FPNH10
C
B
E
TO-92
NPN RF Transistor
This device is designed for use in low noise UHF/VHF amplifiers,
with collector currents in the 100 µA to 20 mA range in common
emitter or common base mode of operations, and in low frequency
drift, high output UHF oscillators. Sourced from Process 42.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
st
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Collector-Emitt er Vol t age 25 V
Collector-Base Voltage 30 V
Emitter-Base Voltage 3.0 V
Collector Current - Continuous 50 mA
Operating and Stora ge Junction Temperature Range -55 to +150
°
C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
FPNH10
P
D
R
θ
JC
R
θ
JA
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
2000 Fairchild Semiconductor Corporation FPNH10 Rev. A
Total Device Dissipation
Derate above 25°C
350
2.8
Thermal Resistance, Junction to Case 125
Thermal Resistance, Junc tion to Ambient 357
mW
mW/°C
°
C/W
°
C/W
(BR)
(BR)
(BR)
NPN RF Transistor
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
CEO
V
CBO
V
EBO
I
CBO
I
EBO
ON CHARACTERISTICS
h
FE
V
sat
CE(
V
BE(on)
SMALL SIGNAL CHARACTERISTICS
f
T
C
cb
C
rb
rb’C
c
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Collector-Emitter Sustaining Voltage* IC = 1.0 mA, IB = 0 25 V
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
I
= 100 µA, IE = 0
C
I
= 10 µA, IC = 0
E
30 V
3.0 V
Collector Cutoff Current VCB = 25 V, IE = 0 100 nA
Emitter Cutoff Current VEB = 2.0 V, I
= 0 100 nA
C
DC Current Gain IC = 4.0 mA, VCE = 10 V 60
Collector-Emitter Saturation Voltage IC = 4.0 mA, IB = 0.4 mA 0.5 V
)
Base-Emitter On Voltage IC = 4.0 mA, VCE = 10 V 0.95 V
Current Gain - Bandwidth Product IC = 4.0 mA , VCE = 10 V,
Collector-Base Capacitance VCB = 10 V, IE = 0, f = 1.0 MH z 0.720 pF
Common-Base Feedback
Capacitance
Collector Base Time Constant IC = 4.0 mA , VCB = 10 V,
f = 100 MHz
VCB = 10 V, IE = 0, f = 1.0 MH z 0.34 0.65 pF
f = 31.8 MHz
650 MHz
9.0 ps
FPNH10
Spice Model
NPN (Is=69.28E-18 Xti=3 Eg=1.11 Vaf=100 Bf=308.6 Ne=1.197 Ise=69.28E-18 Ikf=22.83m Xtb=1.5 Br=1.11
Nc=2 Isc=0 Ikr=0 Rc=4 Cjc=1.042p Mjc=.2468 Vjc=.75 Fc=.5 Cje=1.52p Mje=.3223 Vje=.75 Tr=1.558n
Tf=135.8p Itf=.27 Vtf=10 Xtf=30 Rb=10)
Typical Characteristics
C
FPNH10
NPN RF Transistor
(continued)
Typical Pulsed Current Gain
vs Collector Current
100
Vce = 5V
80
60
40
20
FE
h - TYPICAL PULSED CURRENT GAIN
125 °C
25 °C
- 40 °C
0
0.1 0.2 0.5 1 2 5 10 20 50
I - COLLECTOR CURRENT (mA)
C
Base-Emitter Saturation
Voltage vs Collector Current
1
β
= 10
0.9
0.8
0.7
0.6
0.5
0.4
0.3
BESAT
V - BASE-EMITTER VOLTAGE (V)
0.1 1 10 20
- 40 °C
25 °C
125 °C
I - COLLECTOR CURRENT (mA)
C
Collector-Emitter Saturation
Voltage vs Collector Current
0.2
β
= 10
125 °C
25 °C
- 40 °C
0.1 1 10 20
I - COLLECTOR CURRENT (mA)
- COLLECTOR-EMITTER VOLTAGE (V)
0.15
0.1
0.05
CESAT
Base-Emitter ON Voltage vs
Collector Current
1
V = 5V
CE
0.8
0.6
0.4
0.2
0.01 0.1 1 10 100
BE(ON)
V - BASE-EMITTER ON VOLTAGE (V)
- 40 °C
I - COLLECTOR CURRE N T (mA)
C
25 °C
125 °C
Collector-Cutoff Current
vs Ambient Temperature
10
V = 30V
CB
1
CBO
0.1
I - COLLECTOR CURRENT (nA)
25 50 75 100 125 150
T - AMBIENT TEMPERATURE ( C)
A
°
350
300
250
200
150
100
50
D
P - PO W E R DI SS IPATI O N (W )
0
0 25 50 75 100 125 150
Pow e r Dissipation
vs. Ambi ent Tem pe rature
TO-92
T - TE MP E RATUR E ( C)
A
o
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