Fairchild Semiconductor FPN660, FPN660A Datasheet
FPN660/FPN660A
PNP Low Saturation Transistor
• These devices are designed for high current gain and low saturation
voltage with collector currents up to 3.0A continuous.
• Sourced from process PA.
FPN660/FPN660A
C
B
E
TO-226
Absolute Maximum Ratings
TA=25°C unless otherwise noted
Symbol Parameter FPN660 FPN660A Units
V
CEO
V
CBO
V
EBO
I
C
T
, T
J
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltage (V) and currents (A) are negative polarity for PNP transistors
Electrical Characteristics
Collector-Emitter Voltage 60 60 V
Collector-Base Voltage 80 60 V
Emitter-Base Voltage 5 5 V
Collector Current - Continuous 3 3 A
Operating and Storage Junction Temperature Range -55 ~ +150 -55 ~ +150 °C
STG
TA=25°C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
BV
BV
I
CBO
I
EBO
CEO
CBO
EBO
Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0 55 V
Collector-Base Breakdown Voltage IE = 100µA, IE = 0 FPN660
FPN660A
80
60
Emitter-Base Breakdown Voltage IE = 100µA, IC = 0 5.0 V
Collector-Base Cutoff Current VCB = 30V, IE = 0
= 30V, IE = 0, TA = 100°C
V
CB
10010nA
Emitter-Base Cutoff Current VEB = 4.0V, IC = 0 100 nA
On Characteristics *
h
FE
(sat) Collector-Emitter Saturation Voltage IC = 1.0A, IB = 100mA
V
CE
(sat) Base-Emitter Saturat i on Voltage IC = 1.0A, IB = 100mA 1.25 V
V
BE
(on) Base-Emitter On Voltage IC = 1.0A, VCE = 2.0V 1.0 V
V
BE
DC Current Gain IC = 100mA, VCE = 2.0V
= 500mA, VCE = 2.0V FPN660
I
C
FPN660A
= 1.0A, VCE = 2.0V
I
C
= 2.0A, VCE = 2.0V
I
C
= 2.0A, IB = 200mA FPN660
I
C
FPN660A
70
100
250
80
40
300
550
300
450
400
Small Signal Ch ar ac t e ris t ic s
C
obo
f
T
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
NOTE: All voltage (V) and currents (A) are negative polarity for PNP transistors.
Output Capacitance VCB = 10V, IE = 0, f = 1MHz 45 pF
Transition Frequency IC = 100mA, VCE = 5.0V,
75 MHz
f = 100MHz
V
V
µA
mV
mV
mV
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
FPN660/FPN660A
Thermal Characteristics T
Symbol Parameter
P
D
R
θJC
R
θJA
Total Device Dissipation 1 W
Thermal Resistance, Junction to Case 50 °C/W
Thermal Resistance, Junction to Ambient 125 °C/W
=25°C unless otherwise noted
A
Max.
FPN660/FPN660A
Units
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
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