Fairchild Semiconductor FPN530A, FPN530 Datasheet
FPN530
FPN530A
FPN530 / FPN530A
C
B
E
TO-226
NPN Low Saturation Transistor
These devices are designed for high current gain and low
saturation voltage with collector currents up to 3.0 A continuous.
Sourced from Process NC.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Collector-Emitter V ol tage 30 V
Collector-Base Voltage 60 V
Emitter-Base Volt age 5.0 V
Collector Current - Continuous 3.0 A
Operating and Storage Junction Temperature Range -55 to +150
C
°
Symbol Characteristic Max Units
FPN530 / FPN530A
P
D
R
θ
JC
R
θ
JA
1999 Fairchild Semiconductor Corporation
Total Device Dissipation 1.0 W
Thermal Resistance, Junction to Case 50
Thermal Resistance, Junction to Ambient 125
°C/W
°C/W
NPN Low Saturation Transistor
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
ON CHARACTERISTICS*
h
FE
V
sat
CE(
V
sat
BE(
V
BE(on)
Collector-Emitter Breakdown
IC = 10 mA, IB = 0 30 V
Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current VCB = 30 V, I
Emitter Cutoff Current VEB = 4.0 V, I
DC Current Gain
Collector-Emitter S aturation Voltage
)
I
= 100 µA, IE = 0
C
I
= 100 µA, IC = 0
E
= 0
E
= 30 V, I
V
CB
= 100 mA, VCE = 2.0 V
I
C
I
= 1.0 A, VCE = 2.0 V
C
= 2.0 A, VCE = 2.0 V
I
C
= 1.0 A, IB = 100 mA
I
C
= 0, TA = 100°C
E
= 0 100 nA
C
530
530A
530
60 V
5.0 V
100
250
120
80
530A
I
= 2.0 A, IB = 200 mA
Base-Emitter Saturation Voltage IC = 1.0 A, IB = 100 mA 1.25 V
)
C
Base-Emitter Saturation Voltage IC = 1.0 A, VCE = 2.0 V 1.0 V
100
10
300
250
450
nA
µ
mV
mV
mV
A
FPN530 / FPN530A
SMALL SIGNAL CHARACTERISTICS
C
obo
F
T
Output Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 50 pF
Transition Frequency IC = 100 mA, VCE = 5.0 V,
*Pulse T est: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
f = 100 MHz
150 MHz
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