Fairchild Semiconductor FPBL30SL60 Datasheet

FPBL30SL60

Smart Power Module (SPM)

General Description

FPBL30SL60 is an advanced smart power module (SPM)
that Fairchild has newly developed and designed to provide
very compact and low cost, yet high performance ac motor
drives mainly targeting low speed low-power inverter-driven
application like air conditioners. It combines optimized
circuit protection and drive matched to low-loss IGBTs.
Highly effective short-circuit current detection/protection is
realized through the use of advanced current sensing IGBT
chips that allow continuous monitoring of the IGBTs
current. System reliability is further enhanced by the
integrated under-voltage lock-out protection. The high
speed built-in HVIC provides opto-coupler-less IGBT gate
driving capability that further reduce the overall size of the
inverter system design. In addition the incorporated HVIC
facilitates the use of single-supply drive topology enabling
the FPBL30SL60 to be driven by only one drive supply
voltage without negative bias.

FPBL30SL60

Features

• UL Certified No. E209204

• 600V-30A 3-phase IGBT inverter bridge including control
ICs for gate driving and protection

• Single-grounded power supply due to built-in HVIC

• Typical switching frequency of 3kHz

• Inverter power rating of 2kW / 100~253 Vac

• Isolation rating of 2500Vrms/min.

• Very low leakage current due to using ceramic substrate

• Adjustable current protection level by varying series
resistor value with sense-IGBTs

Applications

• AC 100V ~ 253V three-phase inverter drive for small
power (2kW) ac motor drives

• Home appliances applications requiring low switching
frequency operation like air conditioners drive system

• Application ratings:

- Power : 2kW / 100~253 Vac

- Switching frequency : Typical 3kHz (PWM Control)

- 100% load current : 15A (Irms)

External View and Marking Information

Top View Bottom View

57 mm

55 mm

Device Name

Version, Lot Code

Marking

Fig. 1.

©2003 Fairchild Semiconductor Corporation

Rev. C1, May 2003

Integrated Power Functions

• 600V-30A IGBT inverter for three-phase DC/AC power conversion (Please refer to Fig. 3)

Integrated Drive, Protection and System Control Functions

• For inverter high-side IGBTs: Gate drive circuit, High voltage isolated high-speed level shifting

• For inverter low-side IGBTs: Gate drive circuit, Short circuit protection (SC)

• Fault signaling: Corresponding to a SC fault (Low-side IGBTs) or a UV fault (Low-side supply)

• Input interface: 5V CMOS/LSTTL compatible, Schmitt trigger input

Control circuit under-voltage (UV) protection
Note) Available bootstrap circuit example is given in Figs. 10, 15 and 16.

Control supply circuit under-voltage (UV) protection

Pin Configuration

Top View

V

S(U)

V

B(U)

V

CC(UH)

IN

V

COM

IN
IN

IN

C

CC(L)

(UL)
(VL)

(WL)

V

FOD

C

R

NC

NC
NC

(L)

FO

SC

SC

(UH)

V

S(V)

V

B(V)

V

CC(VH)

IN

(VH)

COM

V

S(W)

V

B(W)

V

CC(WH)

IN

(WH)

FPBL30SL60

(H)

WVUNP

Fig. 2.

Pin Descriptions

Pin Number Pin Name Pin Description

1V

CC(L)

2COM

3IN

4IN

5IN

6V

7C

8C

9R

10 NC No Connection

11 NC No Connection

12 NC No Connection

13 W Output Terminal for W Phase

14 V Output Terminal for V Phase

15 U Output Terminal for U Phase

16 N Negative DC–Link Input

©2003 Fairchild Semiconductor Corporation

(UL)

(VL)

(WL)

FO

FOD

SC

SC

Low-side Common Bias Voltage for IC and IGBTs Driving

Low-side Common Supply Ground

(L)

Signal Input Terminal for Low-side U Phase

Signal Input Terminal for Low-side V Phase

Signal Input Terminal for Low-side W Phase

Fault Output Terminal

Capacitor for Fault Output Duration Time Selection

Capacitor (Low-pass Filter) for Short-current Detection Input

Resistor for Short-circuit Current Detection

Rev. C1, May 2003

Pin Descriptions (Continued)

Pin Number Pin Name Pin Description

17 P Positive DC–Link Input

18 IN

19 V

20 V

21 V

(WH)

CC(WH)

B(W)

S(W)

22 COM

23 IN

24 V

25 V

26 V

CC(VH)

B(V)

S(V)

27 IN

28 V

29 V

30 V

CC(UH)

B(U)

S(U)

(VH)

(UH)

Signal Input Terminal for High-side W Phase

High-side Bias Voltage for W Phase IC

High-side Bias Voltage for W Phase IGBT Driving

High-side Bias Voltage Ground for W Phase IGBT Driving

High-side Common Supply Ground

(H)

Signal Input Terminal for High-side V Phase

High-side Bias Voltage for V Phase IC

High-side Bias Voltage for V Phase IGBT Driving

High-side Bias Voltage Ground for V Phase IGBT Driving

Signal Input Terminal for High-side U Phase

High-side Bias Voltage for U Phase IC

High-side Bias Voltage for U Phase IGBT Driving

High-side Bias Voltage Ground for U Phase IGBT Driving

Internal Equivalent Circuit and Input/Output Pins

(1) V

(2) COM

(3) IN

(4) IN

(5) IN

(6) V

FO

(7) C

FOD

(8) C

SC

(9) R

SC

(10) NC

(11) NC

(12) NC

CC(L)

(L)

(UL)

(VL)

(WL)

V

CC

COM

IN

(UL)

IN

(VL)

IN

(WL)

V

(FO)

C

(FOD)

C

(SC)

(L)

Uout

Vout

Wout

VB

HO

VS

VB

HO

VS

VB

HO

VS

Vcc

COM

Vcc

COM

Vcc

COM

FPBL30SL60

(29) V

B(U)

(28) V

CC(UH)

IN

IN

IN

(27) IN

(UH)

(30) V

S(U)

(25) V

B(V)

(24) V

CC(VH)

(23) IN

(VH)

(22) COM

(26) V

S(V)

(20) V

B(W)

(19) V

CC(WH)

(18) IN

(WH)

(21) V

S(W)

(H)

WVUN

(13)

Note

1. Inverter low-side ( (1) - (12) pins) is composed of three sense-IGBTs including freewheeling diodes for each IGBT and one control IC which has gate driving,
current sensing and protection functions.

2. Inverter power side ( (13) - (17) pins) is composed of two inverter dc-link input terminals and three inverter output terminals.

3. Inverter high-side ( (18) - (30) pins) is composed of three normal-IGBTs including freewheeling diodes and three drive ICs for each IGBT.

(14) (15) (16)

P

(17)

Fig. 3.

©2003 Fairchild Semiconductor Corporation

Rev. C1, May 2003

Absolute Maximum Ratings

Inverter Part

Supply Voltage V

Supply Voltage (Surge) V

Collector-Emitter Voltage V

Each IGBT Collector Current ± I

Each IGBT Collector Current (Peak) ± I

Collector Dissipation P

Operating Junction Temperature T

Note

1. It would be recommended that the average junction temperature should be limited to TJ ≤ 125°C (@TC ≤ 100°C) in order to guarantee safe operation.

(TC = 25°C, Unless Otherwise Specified)

Item Symbol Condition Rating Unit

DC

PN(Surge)

CES

Applied to DC - Link 450 V

Applied between P- N 500 V

600 V

TC = 25°C (Note Fig. 4) 30 A

C

TC = 25°C (Note Fig. 4) 60 A

CP

TC = 25°C per One Chip 56 W

C

(Note 1) -55 ~ 150 °C

J

FPBL30SL60

Control Part

(TC = 25°C, Unless Otherwise Specified)

Item Symbol Condition Rating Unit

Control Supply Voltage V

High-side Control Bias Voltage V

Applied between V

CC

Applied between V

BS

V

Input Signal Voltage V

Applied between IN

IN

IN

Fault Output Supply Voltage V

Fault Output Current I

Current Sensing Input Voltage V

Applied between VFO - COM

FO

Sink Current at VFO Pin 5 mA

FO

Applied between CSC - COM

SC

Total System

Item Symbol Condition Rating Unit

Self Protection Supply Voltage Limit
(Short Circuit Protection Capability)

Module Case Operation Temperature T

Storage Temperature T

Isolation Voltage V

V

DC(PROT)

S(W)

(UL)

STG

ISO

, IN

(VL)

, IN

(WL)

CC(H)

- V

B(U)

(UH)

- COM

- COM

, IN

S(U)

(VH)

(L)

, V

(WH)

CC(L)

- V

- COM

- COM

S(V)

, V

B(W)

(H)

(L)

-

-0.3~VCC+0.5 V

-0.3~VCC+0.5 V

(H)

, V

B(V)

, IN

(L)

(L)

Applied to DC - Link,

= VBS = 13.5 ~ 16.5V

V

CC

T

= 125°C, Non-repetitive, less than 6µs

J

Note Fig. 4 -20 ~ 100 °C

C

-55 ~ 150 °C

60Hz, Sinusoidal, AC 1 minute, Connection

2500 V

Pins to Heat-sink Plate

18 V

20 V

-0.3 ~ 6.0 V

400 V

rms

©2003 Fairchild Semiconductor Corporation

Rev. C1, May 2003

V

COM

IN
IN

IN

C

CC(L)

(UL)

(VL)

(WL)

V

FOD

C

R

NC

NC
NC

FPBL30SL60

Case Temperature (TC) Detecting Point

V

S(U)

V

B(U)

V

CC(UH)

IN

(L)

FO

SC

SC

WVUNP

Fig. 4. Tc Measurement Point

(UH)

V

S(V)

V

B(V)

V

CC(VH)

IN

(VH)

COM

V

S(W)

V

B(W)

V

CC(WH)

IN

(WH)

(H)

Ceramic
Substate

©2003 Fairchild Semiconductor Corporation

Rev. C1, May 2003

Absolute Maximum Ratings

Thermal Resistance

Item Symbol Condition Min. Typ. Max. Unit

Junction to Case Thermal

R

th(j-c)Q

Resistance

R

Contact Thermal

R

Resistance

Note

2. For the measurement point of case temperature (Tc), please refer to Fig. 4.

Each IGBT under Inverter Operating Condition
(Note 2)

Each FWDi under Inverter Operating Condition

th(j-c)F

(Note 2)

Ceramic Substrate (per 1 Module)

th(c-f)

Thermal Grease Applied

Electrical Characteristics

Inverter Part

Collector - Emitter
Saturation Voltage

FWDi Forward Voltage V

Switching Times t

Collector - Emitter
Leakage Current

(Tj = 25°C, Unless Otherwise Specified)

Item Symbol Condition Min. Typ. Max. Unit

V

CE(SAT)VCC

FM

ON

t

C(ON)

t

OFF

t

C(OFF)

t

rr

I

CES

= VBS = 15V

V

= 0V

IN

VIN = 5V IC = 30A, Tj = 25°C - - 2.6 V

VPN = 300V, VCC = VBS = 15V
I

= 30A, Tj = 25°C

C

= 5V ↔ 0V, Inductive Load

V

IN

(High-Low Side)

(Note 3)

VCE = V

, Tj = 25°C - - 250 µA

CES

--2.2°C/W

- - 3.18 °C/W

- - 0.06 °C/W

= 30A, Tj = 25°C - - 2.5 V

I

C

= 30A, Tj = 125°C - - 2.6 V

I

C

= 30A, Tj = 125°C - - 2.4 V

I

C

-0.45 - µs

-0.18 - µs

-0.9-µs

-0.36 - µs

-0.1-µs

FPBL30SL60

Note

3. tON and t
internally. For the detailed information, please see Fig. 5.

include the propagation delay time of the internal drive IC. t

OFF

C(ON)

and t

are the switching time of IGBT itself under the given gate driving condition

C(OFF)

©2003 Fairchild Semiconductor Corporation

Rev. C1, May 2003