Fairchild Semiconductor FPBL15SH60 Datasheet

FPBL15SH60

Smart Power Module (SPM)

General Description

FPBL15SH60 is an advanced smart power module (SPM)
that Fairchild has newly developed and designed to provide
very compact and low cost, yet high performance ac motor
drives mainly targeting high speed low-power inverter­driven application like washing machines. It combines
optimized circuit protection and drive matched to low-loss
IGBTs. Highly effective short-circuit current detection/
protection is realized through the use of advanced current
sensing IGBT chips that allow continuous monitoring of the
IGBTs current. System reliability is further enhanced by the
integrated under-voltage lock-out protection. The high
speed built-in HVIC provides opto-coupler-less IGBT gate
driving capability that further reduce the overall size of the
inverter system design. In addition the incorporated HVIC
facilitates the use of single-supply drive topology enabling
the FPBL15SH60 to be driven by only one drive supply
voltage without negative bias.

FPBL15SH60

Features

• UL Certified No. E209204

• 600V-15A 3-phase IGBT inverter bridge including control
ICs for gate driving and protection

• Single-grounded power supply due to built-in HVIC

• Typical switching frequency of 15kHz

• Inverter power rating of 0.75kW / 100~253 Vac

• Isolation rating of 2500Vrms/min.

• Very low leakage current due to using ceramic substrate

• Adjustable current protection level by varying series
resistor value with sense-IGBTs

Applications

• AC 100V ~ 253V three-phase inverter drive for small
power (0.75kW) ac motor drives

• Home appliances applications requiring high switching
frequency operation like washing machines drive system

• Application ratings:

- Power : 0.75kW / 100~253 Vac

- Switching frequency : Typical 15kHz (PWM Control)

- 100% load current : 5A (Irms)

- 150% load current : 7.5A (Irms)

External View and Marking Information

Top View Bottom View

57 mm

55 mm

Device Name

Version, Lot Code

Marking

Fig. 1.

©2002 Fairchild Semiconductor Corporation

Rev. C, February 2002

Integrated Power Functions

• 600V-15A IGBT inverter for three-phase DC/AC power conversion (Please refer to Fig. 3)

Integrated Drive, Protection and System Control Functions

• For inverter high-side IGBTs: Gate drive circuit, High voltage isolated high-speed level shifting

• For inverter low-side IGBTs: Gate drive circuit, Short circuit protection (SC)

• Fault signaling: Corresponding to a SC fault (Low-side IGBTs) or a UV fault (Low-side supply)

• Input interface: 5V CMOS/LSTTL compatible, Schmitt trigger input

Control circuit under-voltage (UV) protection
Note) Available bootstrap circuit example is given in Figs. 10, 15 and 16.

Control supply circuit under-voltage (UV) protection

Pin Configuration

Top View

V

S(U)

V

B(U)

V

CC(UH)

IN

V

COM

IN
IN

IN

C

CC(L)

(UL)
(VL)

(WL)

V

FOD

C

R

NC
NC

NC

(L)

FO

SC

SC

(UH)

V

S(V)

V

B(V)

V

CC(VH)

IN

(VH)

COM

V

S(W)

V

B(W)

V

CC(WH)

IN

(WH)

FPBL15SH60

(H)

WVUNP

Fig. 2.

Pin Descriptions

Pin Number Pin Name Pin Description

1V

CC(L)

2COM
3IN
4IN
5IN
6V
7C
8C

9R
10 NC No Connection
11 NC No Connection
12 NC No Connection
13 W Output Terminal for W Phase
14 V Output Terminal for V Phase
15 U Output Terminal for U Phase
16 N Negative DC–Link Input

©2002 Fairchild Semiconductor Corporation

(UL)
(VL)

(WL)

FO

FOD

SC
SC

Low-side Common Bias Voltage for IC and IGBTs Driving
Low-side Common Supply Ground

(L)

Signal Input Terminal for Low-side U Phase
Signal Input T erminal for Low-side V Phase
Signal Input T erminal for Low-side W Phase
Fault Output Terminal
Capacitor for Fault Output Duration Time Selection
Capacitor (Low-pass Filter) for Short-current Detection Input

Resistor for Short-circuit Current Detection

Rev. C, February 2002

Pin Descriptions (Continued)

Pin Number Pin Name Pin Description

17 P Positive DC–Link Input
18 IN
19 V
20 V
21 V

(WH)

CC(WH)

B(W)
S(W)

22 COM
23 IN
24 V
25 V
26 V

CC(VH)

B(V)
S(V)

27 IN
28 V
29 V
30 V

CC(UH)

B(U)
S(U)

(VH)

(UH)

Signal Input Terminal for High-side W Phase
High-side Bias Voltage for W Phase IC
High-side Bias Voltage for W Phase IGBT Driving
High-side Bias Voltage Ground for W Phase IGBT Driving
High-side Common Supply Ground

(H)

Signal Input Terminal for High-side V Phase
High-side Bias Voltage for V Phase IC
High-side Bias Voltage for V Phase IGBT Driving
High-side Bias Voltage Ground for V Phase IGBT Driving
Signal Input Terminal for High-side U Phase
High-side Bias Voltage for U Phase IC
High-side Bias Voltage for U Phase IGBT Driving
High-side Bias Voltage Ground for U Phase IGBT Driving

Internal Equivalent Circuit and Input/Output Pins

(1) V

(2) COM

(3) IN

(4) IN

(5) IN

(6) V

FO

(7) C

FOD

(8) C

SC

(9) R

SC

(10) NC
(11) NC
(12) NC

CC(L)

(L)

(UL)

(VL)

(WL)

V

CC

COM

IN

(UL)

IN

(VL)

IN

(WL)

V

(FO)

C

(FOD)

C

(SC)

(L)

Uout

Vout

Wout

VB
HO
VS

VB
HO
VS

VB
HO
VS

Vcc

COM

Vcc

COM

Vcc

COM

FPBL15SH60

(29) V

B(U)

(28) V

CC(UH)

IN

IN

IN

(27) IN

(UH)

(30) V

S(U)

(25) V

B(V)

(24) V

CC(VH)

(23) IN

(VH)

(22) COM
(26) V

S(V)

(20) V

B(W)

(19) V

CC(WH)

(18) IN

(WH)

(21) V

S(W)

(H)

WVUN

(13)

Note

1. Inverter low-side ( (1) - (12) pins) is composed of three sense-IGBTs including freewheeling diodes for each IGBT and one control IC which has gate driving,
current sensing and protection functions.

2. Inverter power side ( (13) - (17) pins) is composed of two inverter dc-link input terminals and three inverter output terminals.

3. Inverter high-side ( (18) - (30) pins) is composed of three normal-IGBTs including freewheeling diodes and three drive ICs for each IGBT.

(14) (15) (16)

P

(17)

Fig. 3.

©2002 Fairchild Semiconductor Corporation

Rev. C, February 2002

Absolute Maximum Ratings

Inverter Part

Supply Voltage V
Supply Voltage (Surge) V
Collector-Emitter Voltage V
Each IGBT Collector Current ± I
Each IGBT Collector Current (Peak) ± I
Collector Dissipation P
Operating Junction Temperature T

Note

1. It would be recommended that the average junction temperature should be limited to TJ ≤ 125°C (@TC ≤ 100°C) in order to guarantee safe operation.

(TC = 25°C, Unless Otherwise Specified)

Item Symbol Condition Rating Unit

DC

PN(Surge)

CES

Applied to DC - Link 450 V
Applied between P- N 500 V

600 V

TC = 25°C (Note Fig. 4) 15 A

C

TC = 25°C (Note Fig. 4) 30 A

CP

TC = 25°C per One Chip 47 W

C

(Note 1) -55 ~ 150 °C

J

FPBL15SH60

Control Part

(TC = 25°C, Unless Otherwise Specified)

Item Symbol Condition Rating Unit

Control Supply Voltage V
High-side Control Bias Voltage V

Applied between V

CC

Applied between V

BS

V

Input Signal Voltage V

Applied between IN

IN

IN
Fault Output Supply Voltage V
Fault Output Current I
Current Sensing Input Voltage V

Applied between VFO - COM

FO

Sink Current at VFO Pin 5 mA

FO

Applied between CSC - COM

SC

Total System

Item Symbol Condition Rating Unit

Self Protection Supply Voltage Limit
(Short Circuit Protection Capability)

Module Case Operation Temperature T
Storage T emperature T
Isolation Voltage V

V

DC(PROT)

S(W)

(UL)

STG

ISO

, IN

(VL)

, IN

(WL)

CC(H)

- V

B(U)

(UH)

- COM

- COM

, IN

S(U)

(VH)

(L)

, V

(WH)

CC(L)

- V

- COM

- COM

S(V)

, V

B(W)

(H)

(L)

-

-0.3~VCC+0.5 V

-0.3~VCC+0.5 V

(H)

, V

B(V)

, IN

(L)

(L)

Applied to DC - Link,

= VBS = 13.5 ~ 16.5V

V

CC

T

= 125°C, Non-repetitive, less than 6µs

J

Note Fig. 4 -20 ~ 100 °C

C

-55 ~ 150 °C

60Hz, Sinusoidal, AC 1 minute, Connection

2500 V

Pins to Heat- sink Plate

18 V
20 V

-0.3 ~ 6.0 V

400 V

rms

©2002 Fairchild Semiconductor Corporation

Rev. C, February 2002

V

COM

IN
IN

IN

C

CC(L)

(UL)
(VL)

(WL)

V

FOD

C

R

NC
NC

NC

FPBL15SH60

Case Temperature (TC) Detecting Point

V

S(U)

V

B(U)

V

CC(UH)

IN

(L)

FO

SC

SC

WVUNP

Fig. 4. Tc Measurement Point

(UH)

V

S(V)

V

B(V)

V

CC(VH)

IN

(VH)

COM

V

S(W)

V

B(W)

V

CC(WH)

IN

(WH)

(H)

Ceramic
Substate

©2002 Fairchild Semiconductor Corporation

Rev. C, February 2002

Absolute Maximum Ratings

Thermal Resistance

Item Symbol Condition Min. Typ. Max. Unit

Junction to Case Thermal

R

th(j-c)Q

Resistance

R

Contact Thermal

R

Resistance

Note

2. For the measurement point of case temperature (Tc), please refer to Fig. 4.

Each IGBT under Inverter Operating Condition
(Note 2)

Each FWDi under Inverter Operating Condition

th(j-c)F

(Note 2)
Ceramic Substrate (per 1 Module)

th(c-f)

Thermal Grease Applied

Electrical Characteristics

Inverter Part

Collector - Emitter
Saturation Voltage

FWDi Forward Voltage V

Switching Times t

Collector - Emitter
Leakage Current

(Tj = 25°C, Unless Otherwise Specified)

Item Symbol Condition Min. Typ. Max. Unit

V

CE(SAT)VCC

FM

ON

t

C(ON)

t

OFF

t

C(OFF)

t

rr

I

CES

= VBS = 15V

V

= 0V

IN

VIN = 5V IC = 15A, Tj = 25°C - - 2.3 V

VPN = 300V, VCC = VBS = 15V
I

= 15A, Tj = 25°C

C

= 5V ↔ 0V, Inductive Load

V

IN

(High-Low Side)
(Note 3)

VCE = V

, Tj = 25°C - - 250 µA

CES

- - 2.61 °C/W

- - 3.73 °C/W

- - 0.06 °C/W

= 15A, Tj = 25°C - - 2.8 V

I

C

= 15A, Tj = 125°C - - 2.9 V

I

C

= 15A, Tj = 125°C - - 2.1 V

I

C

-0.39-µs

-0.12-µs

-0.53-µs

-0.16-µs

-0.1-µs

FPBL15SH60

Note

3. tON and t
internally. For the detailed information, please see Fig. 5.

include the propagation delay time of th e internal drive IC. t

OFF

C(ON)

and t

are the switching time o f IGBT itself u nder the given gate drivin g condition

C(OFF)

©2002 Fairchild Semiconductor Corporation

Rev. C, February 2002