Fairchild Semiconductor FPBL10SH60 Datasheet

©2002 Fairchild Semiconductor Corporation

FPBL10SH60

Rev. B1, February 2002

FPBL10SH60

Smart Power Module (SPM)

General Description

FPBL10SH60 is an advanced smart power module (SPM)
that Fairchild has newly developed and designed to provide
very compact and low cost, yet high performance ac motor
drives mainly targeting high speed low-power inverter­driven application like washing machines. It combines
optimized circuit protection and drive matched to low-loss
IGBTs. Highly effective short-circuit current detection/
protection is realized through the use of advanced current
sensing IGBT chips that allow continuous monitoring of the
IGBTs current. System reliability is further enhanced by the
integrated under-voltage lock-out protection. The high
speed built-in HVIC provides opto-coupler-less IGBT gate
driving capability that further reduce the overall size of the
inverter system design. In addition the incorporated HVIC
facilitates the use of single-supply drive topology enabling
the FPBL10SH60 to be driven by only one drive supply
voltage without negative bias.

Features

• UL Certified No. E209204

• 600V-10A 3-phase IGBT inverter bridge including control
ICs for gate driving and protection

• Single-grounded power supply due to built-in HVIC

• Typical switching frequency of 15kHz

• Inverter power rating of 0.4kW / 100~253 Vac

• Isolation rating of 2500Vrms/min.

• Very low leakage current due to using ceramic substrate

• Adjustable current protection level by varying series
resistor value with sense-IGBTs

Applications

• AC 100V ~ 253V three-phase inverter drive for small
power (0.4kW) ac motor drives

• Home appliances applications requiring high switching
frequency operation like washing machines drive system

• Application ratings:

- Power : 0.4 kW / 100~253 Vac

- Switching frequency : Typical 15kHz (PWM Control)

- 100% load current : 3A (Irms)

- 150% load current : 4.5A (Irms)

External View and Marking Information

Fig. 1.

55 mm

57 mm

Top View Bottom View

Marking

Device Name

Version, Lot Code

©2002 Fairchild Semiconductor Corporation

FPBL10SH60

Rev. B1, February 2002

Integrated Power Functions

• 600V-10A IGBT inverter for three-phase DC/AC power conversion (Please refer to Fig. 3)

Integrated Drive, Protection and System Control Functions

• For inverter high-side IGBTs: Gate drive circuit, High voltage isolated high-speed level shifting
Control circuit under-voltage (UV) protection
Note) Available bootstrap circuit example is given in Figs. 10, 15 and 16.

• For inverter low-side IGBTs: Gate drive circuit, Short circuit protection (SC)
Control supply circuit under-voltage (UV) protection

• Fault signaling: Corresponding to a SC fault (Low-side IGBTs) or a UV fault (Low-side supply)

• Input interface: 5V CMOS/LSTTL compatible, Schmitt trigger input

Pin Configuration

Fig. 2.

Pin Descriptions

Pin Number Pin Name Pin Description

1V

CC(L)

Low-side Common Bias Voltage for IC and IGBTs Driving

2COM

(L)

Low-side Common Supply Ground

3IN

(UL)

Signal Input T erminal for Low-side U Phase

4IN

(VL)

Signal Input T erminal for Low-side V Phase

5IN

(WL)

Signal Input T erminal for Low-side W Phase

6V

FO

Fault Output Terminal

7C

FOD

Capacitor for Fault Output Duration Time Selection

8C

SC

Capacitor (Low-pass Filter) for Short-current Detection Input

9R

SC

Resistor for Short-circuit Current Detection
10 NC No Connection
11 NC No Connection
12 NC No Connection
13 W Output Terminal for W Phase
14 V Output Terminal for V Phase
15 U Output Terminal for U Phase
16 N Negative DC–Link Input

V

CC(L)

COM

(L)

IN

(UL)

IN

(VL)

IN

(WL)

V

FO

C

FOD

C

SC

R

SC

NC
NC

NC

WVUNP

V

S(U)

V

B(U)

V

CC(UH)

IN

(UH)

V

S(V)

V

B(V)

V

CC(VH)

IN

(VH)

COM

(H)

V

S(W)

V

B(W)

V

CC(WH)

IN

(WH)

Top View

©2002 Fairchild Semiconductor Corporation

FPBL10SH60

Rev. B1, February 2002

Internal Equivalent Circuit and Input/Output Pins

Note

1. Inverter low-side ( (1) - (12) pins) is composed of three sense-IGBTs including freewheeling diodes for each IGBT and one control IC which has gate driving,
current sensing and protection functions.

2. Inverter power side ( (13) - (17) pins) is composed of two inverter dc-link input terminals and three inverter output terminals.

3. Inverter high-side ( (18) - (30) pins) is composed of three normal-IGBTs including freewheeling diodes and three drive ICs for each IGBT.

Fig. 3.

17 P Positive DC–Link Input
18 IN

(WH)

Signal Input T erminal for High-side W Phase

19 V

CC(WH)

High-side Bias Voltage for W Phase IC

20 V

B(W)

High-side Bias Voltage for W Phase IGBT Driving

21 V

S(W)

High-side Bias Voltage Ground for W Phase IGBT Driving

22 COM

(H)

High-side Common Supply Ground

23 IN

(VH)

Signal Input T erminal for High-side V Phase

24 V

CC(VH)

High-side Bias Voltage for V Phase IC

25 V

B(V)

High-side Bias Voltage for V Phase IGBT Driving

26 V

S(V)

High-side Bias Voltage Ground for V Phase IGBT Driving

27 IN

(UH)

Signal Input T erminal for High-side U Phase

28 V

CC(UH)

High-side Bias Voltage for U Phase IC

29 V

B(U)

High-side Bias Voltage for U Phase IGBT Driving

30 V

S(U)

High-side Bias Voltage Ground for U Phase IGBT Driving

Pin Descriptions (Continued)

Pin Number Pin Name Pin Description

WVUN

(14) (15) (16)

(17)

P

(1) V

CC(L)

(2) COM

(L)

(3) IN

(UL)

(4) IN

(VL)

(5) IN

(WL)

(6) V

FO

(7) C

FOD

(8) C

SC

(12) NC

(11) NC

(13)

(29) V

B(U)

(22) COM

(H)

(27) IN

(UH)

(30) V

S(U)

(28) V

CC(UH)

(25) V

B(V)

(23) IN

(VH)

(24) V

CC(VH)

(26) V

S(V)

(20) V

B(W)

(18) IN

(WH)

(19) V

CC(WH)

(21) V

S(W)

(10) NC

(9) R

SC

V

CC

Wout

Uout

Vout

C

(SC)

C

(FOD)

V

(FO)

IN

(WL)

IN

(VL)

IN

(UL)

COM

(L)

Vcc

IN

COM

VB
HO
VS

Vcc

IN

COM

VB
HO
VS

Vcc

IN

COM

VB
HO
VS

©2002 Fairchild Semiconductor Corporation

FPBL10SH60

Rev. B1, February 2002

Absolute Maximum Ratings

Inverter Part

(TC = 25°C, Unless Otherwise Specified)

Note

1. It would be recommended that the average junction temperature should be limited to TJ ≤ 125°C (@TC ≤ 100°C) in order to guarantee safe operation.

Control Part

(TC = 25°C, Unless Otherwise Specified)

Total System

Item Symbol Condition Rating Unit

Supply Voltage V

DC

Applied to DC - Link 450 V

Supply Voltage (Surge) V

PN(Surge)

Applied between P- N 500 V

Collector-Emitter Voltage V

CES

600 V

Each IGBT Collector Current ± I

C

TC = 25°C (Note Fig. 4) 10 A

Each IGBT Collector Current (Peak) ± I

CP

TC = 25°C (Note Fig. 4) 20 A

Collector Dissipation P

C

TC = 25°C per One Chip 43 W

Operating Junction Temperature T

J

(Note 1) -55 ~ 150 °C

Item Symbol Condition Rating Unit

Control Supply Voltage V

CC

Applied between V

CC(H)

- COM

(H)

, V

CC(L)

- COM

(L)

18 V

High-side Control Bias Voltage V

BS

Applied between V

B(U)

- V

S(U)

, V

B(V)

- V

S(V)

, V

B(W)

-

V

S(W)

20 V

Input Signal Voltage V

IN

Applied between IN

(UH)

, IN

(VH)

, IN

(WH)

- COM

(H)

IN

(UL)

, IN

(VL)

, IN

(WL)

- COM

(L)

-0.3 ~ 6.0 V

Fault Output Supply Voltage V

FO

Applied between VFO - COM

(L)

-0.3~VCC+0.5 V

Fault Output Current I

FO

Sink Current at VFO Pin 5 mA

Current Sensing Input Voltage V

SC

Applied between CSC - COM

(L)

-0.3~VCC+0.5 V

Item Symbol Condition Rating Unit

Self Protection Supply Voltage Limit
(Short Circuit Protection Capability)

V

DC(PROT)

Applied to DC - Link,
V

CC

= VBS = 13.5 ~ 16.5V

T

J

= 125°C, Non-repetitive, less than 6µs

400 V

Module Case Operation Temperature T

C

Note Fig. 4 -20 ~ 100 °C

Storage Temperature T

STG

-55 ~ 150 °C

Isolation Voltage V

ISO

60Hz, Sinusoidal, AC 1 minute, Connection
Pins to Heat-sink Plate

2500 V

rms

©2002 Fairchild Semiconductor Corporation

FPBL10SH60

Rev. B1, February 2002

Fig. 4. Tc Measurement Point

V

CC(L)

COM

(L)

IN

(UL)

IN

(VL)

IN

(WL)

V

FO

C

FOD

C

SC

R

SC

NC
NC

NC

WVUNP

V

S(U)

V

B(U)

V

CC(UH)

IN

(UH)

V

S(V)

V

B(V)

V

CC(VH)

IN

(VH)

COM

(H)

V

S(W)

V

B(W)

V

CC(WH)

IN

(WH)

Case Temperature (TC) Detecting Point

Ceramic
Substate

©2002 Fairchild Semiconductor Corporation

FPBL10SH60

Rev. B1, February 2002

Absolute Maximum Ratings

Thermal Resistance

Note

2. For the measurement point of case temperature (Tc), please refer to Fig. 4.

Electrical Characteristics

Inverter Part

(Tj = 25°C, Unless Otherwise Specified)

Note

3. tON and t

OFF

include the propagation del ay time of th e internal drive IC. t

C(ON)

and t

C(OFF)

are the switching time o f IGBT itself u nder the given gate drivin g condition

internally. For the detailed information, please see Fig. 5.

Item Symbol Condition Min. Typ. Max. Unit

Junction to Case Thermal
Resistance

R

th(j-c)Q

Each IGBT under Inverter Operating Condition
(Note 2)

- - 2.89 °C/W

R

th(j-c)F

Each FWDi under Inverter Operating Condition
(Note 2)

- - 3.73 °C/W

Contact Thermal
Resistance

R

th(c-f)

Ceramic Substrate (per 1 Module)
Thermal Grease Applied

- - 0.06 °C/W

Item Symbol Condition Min. Typ. Max. Unit

Collector - Emitter
Saturation Voltage

V

CE(SAT)VCC

= VBS = 15V

V

IN

= 0V

I

C

= 10A, Tj = 25°C - - 2.8 V

I

C

= 10A, Tj = 125°C - - 2.9 V

FWDi Forward Voltage V

FMVIN

= 5V IC = 10A, Tj = 25°C - - 2.3 V

I

C

= 10A, Tj = 125°C - - 2.1 V

Switching Times t

ON

VPN = 300V, VCC = VBS = 15V
I

C

= 10A, Tj = 25°C

V

IN

= 5V ↔ 0V, Inductive Load

(High-Low Side)
(Note 3)

-0.37- µs

t

C(ON)

-0.12- µs

t

OFF

-0.53- µs

t

C(OFF)

-0.2-µs

t

rr

-0.1-µs

Collector - Emitter
Leakage Current

I

CESVCE

= V

CES

, Tj = 25°C - - 250 µA