Fairchild Semiconductor FLLD261 Datasheet

FLLD261

HIGH CONDUCTANCE LOW LEAKAGE DIODE

PD . . . .350 mW @ TA = 25 Deg C

BV . . . .200 V (MIN) @ IR = 5 uA

3

PACKAGE

TO-236AB (Low)

P8A

ABSOLUTE MAXIMUM RATINGS (NOTE 1)
TEMPERATURES

Storage Temperature -55 to +150 Degrees C
Operating Junction Temperature -55 to +150 Degrees C

POWER DISSIPATION (NOTES 2 & 3)
Total Device Dissipation at TA = 25 Deg C 350 mW
Derating Factor per Degree C 2.8 mW

VOLTAGES & CURRENTS

WIV Working Inverse Voltage 100 V
IO Average Rectified Current 250 mA
IF DC Forward Current 600 mA
if Recurrent Peak Forward Current 700 mA
if (surge) Peak Forward Surge Current

Pulse width = 1 second 1.0 A
Pulse width = 1 microsec 3.0 A

1 2

CONNECTION DIAGRAMS

3

21

ELECTRICAL CHARACTERISTICS (25 Degrees C Ambient Temperature unless otherwise stated)

SYM CHARACTERISTICS MIN MAX UNITS TEST CONDITIONS

BV Breakdown Voltage 200 V IR = 5.0 uA
IR Reverse Voltage Leakage Current 5.0 nA VR = 100 V

5.0 uA VR = 100 V TA = 150 Deg C

VF Forward Voltage 1.40 V IF = 200 mA

CT Diode Capacitance 4.0 pF VR = 1.0 V f = 1.0 MHZ
TRR Reverse Recovery Time 400 ns IF = IR = 50 to 400 mA

IRR = 10% IR RL = 100 ohms
TFR Forward Recovery Time 10 ns IF = 10 mA
VFM Peak Forward Voltage 0.9 V IF = 10 mA

Typ Rise Time = 5 ns +/-20%

NOTES:

1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

0.019 (0.483)

0.015 (0.381)

3

0.098 (2.489)

0.083 (2.108)

0.040 (1.016)

0.035 (0.889)

3 CHARACTERS MAX

1

0.080 (2.032)

0.070 (1.778)

0.120 (3.048)

0.110 (2.794)

0.055 (1.397)

0.047 (1.194)

2

LOW PROFILE 0.041 (1.041)

0.024 (0.810)

0.018 (0.457)

(49) 0.030 (0.762)

LOW PROFILE 0.0040 (0.102)

(49) 0.0005 (0.013)

SOT-23 (DIODE)

0.0059 (0.150)

0.0035 (0.089)

TO-236AB (LOW PROFILE)

11-March-1997