Fairchild Semiconductor FJZ945 Datasheet
FJZ945
FJZ945
Audio Frequency Amplifier & High
Frequency OSC.
• Complement to FJZ733
• Collector-Base Voltage : V
• High Current Gain Bandwidth Product : f
CBO
=60V
=300MHz (Typ.)
T
3
2
1
SOT-623F
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage 60 V
Collector-Emitter Voltage 50 V
Emitter-Base Voltage 5 V
Collector Current 150 mA
Collector Power Dissipation 100 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics T
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
(sat) Collector-Emitter Saturation Voltage IC=100mA, IB=10mA 0.15 0.3 V
CE
f
T
C
ob
NF Noise Figure V
Collector-Base Breakdown Voltage IC=100µA, IE=0 60 V
Collector-Emitter Breakdown Voltage IC=10mA, IB=0 50 V
Emitter-Base Breakdown Voltage IE=10µA, IC=0 5 V
Collector Cut-off Current VCB=40V, IE=0 0.1 µA
Emitter Cut-off Current VEB=3V, IC=0 0.1 µA
DC Current Gain VCE=6V, IC=1.0mA 40 700
Current Gain Bandwidth Product VCE=6V, IC=10mA 300 MHz
Output Capacitance VCB=6V, IE=0, f=1MHz 2.5 pF
Ta=25°C unless otherwise noted
=25°C unless otherwise noted
a
=6V, IC=0.5mA
CE
f=1KHz, R
=500Ω
S
4.0 dB
Thermal Characteristics
Symbol Parameter Max. Units
R
θJA
Thermal Resistance, Junction to Ambient 1250 °C/W
TC=25°C unless otherwise noted
hFE Classification & Marking
Classification R O Y G L
h
FE
Marking C2 C3 C1 C4 C5
40 ~ 80 70 ~ 140 120 ~ 240 200 ~ 400 350 ~ 700
Marking
C1
©2003 Fairchild Semiconductor Corporation Rev. B1, July 2003
Typical Characteristics
FJZ945
100
IB = 400µA
80
60
40
20
[mA], COLLECTOR CURRENT
C
I
0
0 2 4 6 8 10 12 14 16 18 20
IB = 350µA
IB = 300µA
VCE[V], COL LECTOR -EMITT ER VOLT AGE
Figure 1. Static Characteristic Figure 2. Transfer Characteristic
Ta=1250C
Ta=250C
100
Ta=-250C
IB = 250µA
IB = 200µA
IB = 150µA
IB = 100µA
IB = 50µA
VCE=6V
100
80
1250C
60
40
20
[mA], COLLECTOR CURRENT
C
I
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
250C
VCE=6V
-250C
VBE[V], BASE-EMITTER VOLTAGE
IC=10I
B
1
Ta=-250C
Ta=250C
Ta=1250C
, DC CURRENT GA IN
FE
h
10
1 10 100 1000
IC[mA], COLLECTOR CURRENT
(sat)[V], SATURATION VOLTAGE
BE
V
0.1
1E-3 0.01 0.1 1
IC[A], COLLECTOR CURRENT
Figure 3. DC Current Gain Figure 4. Base-Emitter Saturation Voltage
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
V
0.01
1E-3 0.01 0.1 1
Ta=1250C
Ta=250C
Ta=-250C
IC[A], COLLECTOR CUR RENT
IC=10I
100
B
10
1
[pF], CAP ACITANC E
ob
C
0.1
1 10 100 1000
VCB [V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector-Emitter Saturation Voltage Figure 6. Output Capacitance
IE = 0
f = 1MHz
©2003 Fairchild Semiconductor Corporation
Rev. B1, July 2003
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