Fairchild Semiconductor FJZ733 Datasheet
FJZ733
Low Frequency Amplifier
• Collector-Base Voltage : V
• Complement to FJZ945
PNP Epitaxial Silicon Transistor
CBO
= -60V
3
2
1
SOT-623F
1. Base 2. Emitter 3. Collector
FJZ733
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
Collector-Base Voltage -60 V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Emitter Voltage -50 V
Emitter-Base Voltage -5 V
Collector Current -150 mA
Collector Power Dissipation 100 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
DC Current Gain VCE= -6V, IC= -1mA 40 700
h
FE
(sat) Collector-Emitter Saturation Voltage IC= -100mA, IB= -10mA -0.18 -0.3 V
V
CE
V
(on) Base-Emitter On Voltage VCE= -6V, IC= -1mA -0.50 -0.62 -0.80 V
BE
Current Gain Bandwidth Product VCE= -6V, IC= -10mA 50 180 MHz
f
T
C
ob
NF Noise Figure V
Collector-Base Breakdown Voltage IC= -100µA, IE=0 -60 V
Collector-Emitter Breakdown Voltage IC= -10mA. IB=0 -50 V
Emitter-Base Breakdown Voltage IE = -10µA. IC=0 - 5 V
Collector Cut-off Current VCB= --60V, IE=0 -100 nA
Emitter Cut-off Current VEB= -5V, IC=0 -100 nA
Output Capacitance VCB= -10V, IE = 0, f=1MHz 2.8 pF
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
= -6V, IC= -0.3mA
CE
f=1MHz, Rs=10kΩ
6.0 dB
Thermal Characteristics
Symbol Parameter Max. Units
R
θJA
Thermal Resistance, Junction to Ambient 1250 °C/W
TC=25°C unless otherwise noted
hFE Classification & Marking
Classification R O Y G L
h
FE
Marking A2 A3 A1 A4 A5
40 ~ 80 70 ~ 140 120 ~ 240 200 ~ 400 350 ~ 700
Marking
A1
©2003 Fairchild Semiconductor Corporation Rev. B1, July 2003
Typical Characteristics
FJZ733
-50
-45
-40
-35
-30
-25
-20
-15
-10
[mA], COLLECTOR CURRENT
C
I
-5
0
0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20
IB = -400µA
IB = -350µA
IB = -300µA
IB = -250µA
VCE[V], COLLECTOR-EMITTE R VOLTAGE
Figure 1. Static Characteristic Figure 2. DC Current Gain
-1
Ta=-250C
Ta=250C
Ta=1250C
IB = -200µA
IB = -150µA
IB = -100µA
IB = -50µA
IC=10I
Ta=1250C
Ta=250C
100
Ta=-250C
, DC CURRENT GAIN
FE
h
10
-1 -10 -100 -1000
VCE=-6V
IC[mA], COLLECTOR C URRENT
B
-1
Ta=1250C
-0.1
Ta=250C
Ta=-250C
IC=10I
B
(SAT)[V], SATURATION VOLTAGE
BE
V
-0.1
-1E-3 -0.01 -0.1 -1
IC[A], COLLECTOR CURRENT
(sat)[V], SATURATION VOLTAGE
CE
V
-0.01
-1E-3 -0.01 -0.1 -1
IC[A], COLLECTOR CUR RENT
Figure 3. Base-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage
-100
-80
-60
-40
-20
[mA], COLL ECTOR CURRENT
C
I
-0
-0.0 -0.2 -0.4 -0.6 -0.8 -1.0
1250C
250C
VBE[V], BASE-EMITTER VOLTAGE
VCE=-6V
-250C
10
Cob [pF], CAPACITANCE
1
-1 -10 -100
VCB [V], COLLECTOR-BASE VOLTAGE
IE = 0
f = 1MHz
Figure 5. Base-Emitter On Voltage Figure 6. Collector Output Capacitance
©2003 Fairchild Semiconductor Corporation
Rev. B1, July 2003
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