Fairchild Semiconductor FJYF2906 Datasheet
FJYF2906
FJYF2906
PNP Multi-Chip General Purpose Amplifier
• Collector-Emitter Voltage: V
• Amplifier and Switching Application
• E2 is on pin 1
Absolute Maximum Ratings
CEO
= 40V
TA=25°C unless otherwise noted
C1
E1
C2
B1
B2
E2
(Pin1)
SOT-563F
Mark: S1
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
T
, T
J
STG
Electrical Characteristics
Collector-Emitter Voltage 40 V
Collector-Base Voltage 40 V
Emitter-Base Voltage 5 V
Collector Current - Continuous 150 mA
Operating and Storage Junction Temperature Range -55 ~ +150 °C
TA=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
Off Characteristics
BV
BV
BV
I
CEX
CEO
CBO
EBO
Collector-Emitter Breakdown Voltage IC = 1MA, IB = 0 40 V
Collector-Base Breakdown Voltage IC = 10µA, IE = 0 40 V
Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 5 V
Collector Cut-off Current VCE = 30V, VBE = 3V 50
On Characteristics
h
FE
(sat) Collector-Emitter Saturation Voltage IC = 10mA, IB = 1mA
V
CE
(sat) Base-Emitter Saturation Voltage IC = 10mA, IB = 1mA
V
BE
DC Current Gain * VCE = 1V, IC = 0.1MA
V
= 1V, IC = 1mA
CE
= 1V, IC = 10mA
V
CE
= 1V, IC = 50mA
V
CE
V
= 1V, IC = 100mA
CE
= 50mA, IB = 5mA
I
C
= 50mA, IB = 5mA
I
C
60
80
100
300
60
30
0.3
0.5
0.65 0.951V
Small Signal Characteristics
f
T
Current gain Bandwidth Product VCE = 20V, IC = 10mA
250 MHz
f = 100MHz
C
obo
C
ibo
* Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2.0%
NOTE: All voltage (V) and currents (A) are negative for PNP transistors.
Output Capacitance VCB = 5V, IE = 0, f = 1MHz 4.5 pF
Input Capacitance VEB = 0.5V, IC = 0, f = 1MHz 10 pF
N
A
V
V
V
©2002 Fairchild Semiconductor Corporation Rev. A1, September 2002
FJYF2906
Thermal Characteristics T
Symbol Parameter FJYF2906 Units
P
D
R
JA
θ
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient 833 °C/W
=25°C unless otherwise noted
A
150
1.2
mW
mW/°C
©2002 Fairchild Semiconductor Corporation
Rev. A1, September 2002
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