Fairchild Semiconductor FJX945 Datasheet
FJX945
FJX945
Audio Frequency Amplifier
3
High Frequency OSC.
• Collector-Base Voltage V
• High Current Gain Bandwidth Product f
• Complement to FJX733
CBO
=60V
=300MHz (Typ)
T
2
1
SOT-323
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage 60 V
Collector-Emitter Voltage 50 V
Emitter-Base Voltage 5 V
Collector Current 150 mA
Collector Power Dissipation 200 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Tes t Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC=100mA, IB=10mA 0.15 0.3 V
V
CE
f
T
C
ob
NF Noise Figure V
Collector-Base Breakdown Voltage IC=100µA, IE=0 60 V
Collector-Emitter Breakdown Voltage IC=10mA, IB=0 50 V
Emitter-Base Breakdown Voltage IE=10µA, IC=0 5 V
Collector Cut-off Current VCB=40V, IE=0 0.1 µA
Emitter Cut-off Current VEB=3V, IC=0 0.1 µA
DC Current Gain VCE=6V, IC=1.0mA 40 700
Current Gain Bandwidth Product VCE=6V, IC=10mA 300 MHz
Output Capacitance VCB=6V, IE=0
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
f=1MHz
=6V, IE= -0.5mA
CE
f=1KHz, R
=500Ω
S
2.5 pF
4.0 dB
hFE Classification
Classification R O Y G L
h
FE
40 ~ 80 70 ~ 140 120 ~ 240 200 ~ 400 350 ~ 700
Marking
SAX
Grade
©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
Typical Characteristics
FJX945
100
IB = 400µA
80
60
IB = 350µA
IB = 300µA
IB = 250µA
IB = 200µA
40
20
[mA], COLLECTOR CURRENT
C
I
0
02468101214161820
IB = 150µA
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
1000
100
, DC CURRENT GAIN
FE
h
IB = 100µA
IB = 50µA
VCE = 6V
100
VCE = 6V
10
1
[mA], COLLECTOR CURRENT
C
I
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VBE[V], BASE-EMITTER VOLTAGE
Figure 2. Transfer Characteristic
VBE(sat)
IC = 10 I
B
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
VCE(sat)
10
1 10 100 1000
IC[mA], COLLECTOR CURRENT
Figure 3. DC current Gain
100
10
1
[pF], CAPACITANCE
ob
C
0.1
1 10 100 1000
VCB [V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance
©2002 Fairchild Semiconductor Corporation
(sat), V
BE
V
0.01
1 10 100 1000
IC[mA], COLLECTOR CURRENT
Figure 4. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
1000
IE = 0
f = 1MHz
100
10
1
[MHz], CURRENT GAIN BANDWIDTH PRODUCT
T
f
0.1 1 10 100
IC[mA], COLLECTOR CURRENT
VCE = 6V
Figure 6. Current Gain Bandwidth Product
Rev. A2, August 2002
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