Fairchild Semiconductor FJX733 Datasheet
FJX733
FJX733
Low Frequency Amplifier
• Collector-Base Voltage V
• Complement to FJX945
CBO
= -60V
1. Base 2. Emitter 3. Collector
3
2
1
SOT-323
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Ratings Units
Collector-Base Voltage -60 V
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Emitter Voltage -50 V
Emitter-Base Voltage -5 V
Collector Current -150 mA
Collector Power Dissipation 200 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Tes t Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
DC Current Gain VCE= -6V, IC= -1mA 40 700
h
FE
(sat) Collector-Emitter Saturation Voltage IC= -100mA, IB= -10mA -0.18 -0.3 V
V
CE
(on) Base-Emitter On Voltage VCE= -6V, IC= -1mA -0.50 -0.62 -0.80 V
V
BE
Current Gain Bandwidth Product VCE= -6V, IC= -10mA 50 180 MHz
f
T
C
ob
NF Noise Figure V
Collector-Base Breakdown Voltage IC= -100, IE=0 -60 V
Collector-Emitter Breakdown Voltage IC= -10mA. IB=0 -50 V
Emitter-Base Breakdown Voltage IE = -10. IC=0 - 5 V
Collector Cut-off Current VCB= -25V , IE=0 -100 nA
Emitter Cut-off Current VEB= -3V, IC=0 -100 nA
Output Capacitance VCB= -10V , IE = 0
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
f=1MHz
= -6V, IC= -0.3mA
CE
f=1MHz, Rs=10K
2.8 pF
6.0 20 dB
hFE Classification
Classification R O Y G L
h
FE
40 ~ 80 70 ~ 140 120 ~ 240 200 ~ 400 350 ~ 700
Marking
SBX
Grade
©2002 Fairchild Semiconductor Corporation Rev. B2, August 2002
Typical Characteristics
FJX733
-50
-45
-40
-35
-30
-25
-20
-15
-10
[mA], COLLECTOR CURRENT
C
I
-5
0
0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20
IB = -400µA
IB = -350µA
IB = -300µA
IB = -250µA
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
-10
-1
-0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
-0.01
-1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT
VBE(sat)
VCE(sat)
IB = -200µA
IB = -150µA
IB = -100µA
IB = -50µA
IC = 10 I
1000
VCE = -6V
100
10
, DC CURRENT GAIN
FE
h
1
-0.1 -1 -10 -100
IC[mA], COLLECTOR CURRENT
B
-100
-10
-1
[mA], COLLECTOR CURRENT
C
I
-0.1
0.0 -0.2 -0.4 - 0.6 -0.8 -1.0 -1.2
VCE = -6V
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
[pF], CAPACITANCE
ob
C
1
-1 -10 -100
VCB [V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation
Figure 4. Base-Emitter On Voltage
IE = 0
f = 1MHz
1000
100
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
T
f
10
-1 -10
IC[mA], COLLECTOR CURRENT
VCE = -6V
Rev. B2, August 2002
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