Fairchild Semiconductor FJX4012R Datasheet
FJX4012R
FJX4012R
Switching Application
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R=47KΩ)
• Complement to FJX3012R
(Bias Resistor Built In)
Marking
R62
3
1. Base 2. Emitter 3. Collector
Equivalent Circuit
R
B
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage -40 V
Collector-Emitter Voltage -40 V
Emitter-Base Voltage -5 V
Collector Current -100 mA
Collector Power Dissipation 200 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Ta=25°C unless otherwise noted
1
SOT-323
2
C
E
Electrical Characteristics
Symbol Parameter Tes t Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
I
CBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC= -10mA, IB= -1mA -0.3 V
V
CE
C
ob
f
T
R Input Resistor 32 47 62 KΩ
©2002 Fairchild Semiconductor Corporation Rev. A3, August 2002
Collector-Base Breakdown Voltage IC= -100µA, IE=0 -40 V
Collector-Emitter Breakdown Voltage IC= -1mA, IB=0 -40 V
Collector Cut-off Current VCB= -30V , IE=0 -0.1 µA
DC Current Gain VCE= -5V, IC= -1mA 100 600
Output Capacitance VCB= -10V , IE=0
Current Gain Bandwidth Product VCE= -10V , IC= -5mA 200 MHz
Ta=25°C unless otherwise noted
5.5 pF
f=1MHz
Package Dimensions
2.00±0.20
FJX4012R
SOT-323
3°
1.25±0.10 2.10±0.10
1.00±0.10
0.135
0.275±0.100
+0.04
–0.01
0.10 Min
0.95±0.15
0.05
3°
+0.05
–0.02
0.90
±0.10
1.30±0.10
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A3, August 2002