Fairchild Semiconductor FJX3013R Datasheet
FJX3013R
FJX3013R
Switching Application
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R
=2.2KΩ, R2=47KΩ)
1
(Bias Resistor Built In)
3
• Complement to FJX4013R
1. Base 2. Emitter 3. Collector
Marking
S13
Equivalent Circuit
R1
B
R2
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage 50 V
Collector-Emitter Voltage 50 V
Emitter-Base Voltage 10 V
Collector Current 100 mA
Collector Power Dissipation 200 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Ta=25°C unless otherwise noted
1
SOT-323
2
C
E
Electrical Characteristics
Ta=25°C unless otherwise noted
Symbol Parameter Tes t Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
I
CBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC=10mA, IB=0.5mA 0.3 V
V
CE
f
T
C
ob
V
(off) Input Off Voltage VCE=5V, IC=100µA0.5 V
I
(on) Input On Voltage VCE=0.2V, IC=5mA 1.1 V
V
I
R
1
R
1/R2
©2002 Fairchild Semiconductor Corporation Rev. A3, August 2002
Collector-Base Breakdown Voltage IC=10µA, IE=0 50 V
Collector-Emitter Breakdown Voltage IC=100µA, IB=0 50 V
Collector Cut-off Current VCB=40V, IE=0 0.1 µA
DC Current Gain VCE=5V, IC=5mA 68
Current Gain Bandwidth Product VCE=10V, IC=5mA 250 MHz
Output Capacitance VCB=10V, IE=0
3.7 pF
f=1.0MHz
Input Resistor 1.5 2.2 2. 9 KΩ
Resistor Ratio 0.042 0.047 0.052
Package Dimensions
2.00±0.20
FJX3013R
SOT-323
3°
1.25±0.10 2.10±0.10
1.00±0.10
0.135
0.275±0.100
+0.04
–0.01
0.10 Min
0.95±0.15
0.05
3°
+0.05
–0.02
0.90
±0.10
1.30±0.10
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A3, August 2002
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