Fairchild Semiconductor FJX3012R Datasheet
FJX3012R
FJX3012R
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R=47KΩ)
• Complement to FJX4012R
1. Base 2. Emitter 3. Collector
Marking
S12
3
Equivalent Circuit
R
B
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage 40 V
Collector-Emitter Voltage 40 V
Emitter-Base Voltage 5 V
Collector Current 100 mA
Collector Power Dissipation 200 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Ta=25°C unless otherwise noted
1
SOT-323
2
C
E
Electrical Characteristics
Symbol Parameter Tes t Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
I
CBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC=10mA, IB=1mA 0.3 V
V
CE
C
ob
f
T
R Input Resistor 32 47 62 KΩ
©2002 Fairchild Semiconductor Corporation Rev. A3, August 2002
Collector-Base Breakdown Voltage IC=100µA, IE=0 40 V
Collector-Emitter Breakdown Voltage IE=1mA, IB=0 40 V
Collector Cut-off Current VCB=30V, IE=0 0.1 µA
DC Current Gain VCE=5V, IC=1mA 100 600
Output Capacitance VCB=10V, IE=0
Current Gain Bandwidth Product VCE=10V, IC=5mA 250 MHz
Ta=25°C unless otherwise noted
3.7 pF
f=1MHz
Package Dimensions
2.00±0.20
FJX3012R
SOT-323
3°
1.25±0.10 2.10±0.10
1.00±0.10
0.135
0.275±0.100
+0.04
–0.01
0.10 Min
0.95±0.15
0.05
3°
+0.05
–0.02
0.90
±0.10
1.30±0.10
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A3, August 2002
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