Fairchild Semiconductor FJX3007R Datasheet
FJX3007R
FJX3007R
Switching Application (Bias Resistor Built In)
3
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R
=22KΩ, R2=47KΩ)
1
• Complement to FJX4007R
1. Base 2. Emitter 3. Collector
Marking
S07
Equivalent Circuit
R1
B
R2
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage 50 V
Collector-Emitter Voltage 50 V
Emitter-Base Voltage 10 V
Collector Current 100 mA
Collector Power Dissipation 200 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Ta=25°C unless otherwise noted
1
SOT-323
2
C
E
Electrical Characteristics
Ta=25°C unless otherwise noted
Symbol Parameter Tes t Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
I
CBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC=10mA, IB=0.5mA 0.3 V
V
CE
C
ob
f
T
(off) Input Off Voltage VCE=5V, IC=100µA0.4 V
V
I
(on) Input On Voltage VCE=0.3V, IC=2mA 2.5 V
V
I
R
1
R
1/R2
©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
Collector-Base Breakdown Voltage IC=10µΑ, IE=0 50 V
Collector-Emitter Breakdown Voltage IC=100µA, IB=0 50 V
Collector Cut-off Current VCB=40V, IE=0 0.1 µA
DC Current Gain VCE=5V, IC=5mA 68
Output Capacitance VCB=10V, IE=0
3.7 pF
f=1MHz
Current Gain Bandwidth Product VCE=10V, IC=5mA 250 MHz
Input Resistor 15 22 29 KΩ
Resistor Ratio 0.42 0.47 0.52
Typical Characteristics
FJX3007R
1000
100
10
, DC CURRENT GAIN
FE
h
1
0.1 1 10 100
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Input On Voltage
10k
1k
100
A], COLLECTOR CURRENT
10
µ
[
C
I
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VI(off)[V], INPUT OFF VOLTAGE
VCE = 5V
R1 = 22K
R2 = 47K
VCE = 5V
R1 = 22K
R2 = 47K
100
VCE = 0.3V
R1 = 22K
R2 = 47K
10
1
(on)[V], INPUT VOLTAGE
I
V
0.1
0.1 1 10 100
IC[mA], COLLECTOR CURRENT
400
350
300
250
200
150
100
[mW], POWER DISSIPATION
C
50
P
0
0 255075100125150175
Ta[oC], AMBIENT TEMPERATURE
Figure 3. Input Off Voltage Figure 4. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
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