Fairchild Semiconductor FJV992 Datasheet
FJV992
Audio Frequency Low Noise Amplifier
• Complement to FJV1845
PNP Epitaxial Silicon Transistor
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
FJV992
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage -120 V
Collector-Emitter Voltage -120 V
Emitter-Base Voltage -5 V
Collector Current -50 mA
Collector Power Dissipation 300 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Tes t Condition Min. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
EBO
h
FE1
h
FE2
(sat) Collector-Emitter Saturation Voltage IC= -10mA, IB= -1mA -300 mV
V
CE
(on) Base-Emitter On Voltage VCE= -6V, IC= -1mA -0.55 -0.65 V
V
BE
f
T
C
ob
NV Noise Voltage 40 mV
Collector-Base Breakdown Voltage IC= -100µA, IE=0 -120 V
Collector-Emitter Breakdown Voltage IC= -1mA, IB=0 -120 V
Emitter-Emitter Breakdown Voltage IE= -10µA, IC=0 -5 V
Emitter-Base Cutoff Current VEB= -6V, IC=0 -30 nA
DC Current Gain VCE= -6V, IC= -0.1mA
Current Gain Bandwidth Product VCE= -6V, IC= -1mA 50 MHz
Output Capacitance VCB= -30V, IE=0, f=1MHz 3 pF
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
V
= -6V, IC= -1mA
CE
150
200 800
h
Classification
FE2
Classification P F E
h
FE2
200 ~ 400 300 ~ 600 400 ~ 800
Marking
2JP
hFE Classification
©2002 Fairchild Semiconductor Corporation Rev. B, November 2002
Typical Characteristics
FJV992
-1.0
-0.8
-0.6
-0.4
-0.2
[mA], COLLECTOR CURRENT
C
I
0.0
0 -20 -40 -60 -80 -100
IB = -1.2µA
IB = -1.2µA
IB = -1.0µA
IB = 0
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. Static Characteristic
1000
Ta=1250C
Ta=250C
Ta=-250C
100
IB = -0.8µA
IB = -0.6µA
IB = -0.4µA
IB = -0.2µA
VCE=-6V
-10
IB = -24µA
-8
-6
-4
-2
[mA], COLLECTOR CURRENT
C
I
0
0-1-2-3-4-5
IB = -20µA
IB = -16µA
IB = -12µA
IB = -8µA
IB = -4µA
IB = 0
VCE[V], COLLECTOR-EMITTER VOLTAGE
-1
Ta=250C
Ta=1250C
-0.1
IC=10I
B
, DC CURRENT GAIN
FE
h
10
-1E-3 -0.01 -0.1
IC[mA], COLLECTOR CURRENT
Ta=-250C
(SAT)[V], SATURATION VOLTAGE
CE
V
-0.01
-1E-3 -0.01 -0.1
IC[mA], COLLECTOR CURRENT
Figure 3. DC current Gain Figure 4. Collector-Emitter Saturation Voltage
1
Ta=-250C
Ta=250C
Ta=1250C
(SAT)[V], SATURATION VOLTAGE
BE
V
0.1
1E-3 0.01 0.1
IC[mA], COLLECTOR CURRENT
IC=10I
-0.12
B
-0.10
-0.08
-0.06
-0.04
[A], COLLECTOR CURRENT
C
-0.02
I
-0.00
-0.2 -0.4 -0.6 -0.8 -1.0
VBE[V], BASE-EMITTER VOLTAGE
Ta=1250C
Ta=250C
Figure 5. Base-Emitter Saturation Voltage Figure 6. Base-Emitter Voltage
VCE=-6V
Ta=-250C
©2002 Fairchild Semiconductor Corporation
Rev. B, November 2002
Loading...