Fairchild Semiconductor FJV4114R Datasheet
FJV4114R
FJV4114R
Switching Application
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R
=4.7KΩ, R2=47KΩ)
1
(Bias Resistor Built In)
3
• Complement to FJV3114R
1. Base 2. Emitter 3. Collector
Marking
Equivalent Circuit
R1
R84
B
R2
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage -50 V
Collector-Emitter Voltage -50 V
Emitter-Base Voltage -10 V
Collector Current -100 mA
Collector Power Dissipation 200 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Ta=25°C unless otherwise noted
1
2
SOT-23
C
E
Electrical Characteristics
Ta=25°C unless otherwise noted
Symbol Parameter Tes t Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
I
CBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC= -10mA, IB= -0.5mA -0.3 V
V
CE
f
T
C
ob
Collector-Base Breakdown Voltage IC= -10µA, IE=0 -50 V
Collector-Emitter Breakdown Voltage IC= -100µA, IB=0 -50 V
Collector Cutoff Current VCB= -40V , IE=0 -0.1 µA
DC Current Gain VCE= -5V, IC= -5mA 68
Current Gain Bandwidth Product VCE= -10V , IC=-5mA 200 MHz
Output Capacitance VCB= -10V , IE=0
5.5 pF
f=1.0MHz
(off) Input Off Voltage VCE= -5V, IC= -100µA-0.5 V
V
I
(on) Input On Voltage VCE= -0.2V, IC= -5mA -1.3 V
V
I
R
1
R
1/R2
©2002 Fairchild Semiconductor Corporation Rev. A, August 2002
Input Resistor 3.2 4.7 6.2 KΩ
Resistor Ratio 0.09 0.1 0.11
Package Dimensions
0.40
±0.03
FJV4114R
SOT-23
0.20 MIN
0.45~0.60
0.95
2.90
±0.03
1.90
±0.10
0.95
±0.03
±0.03
±0.10
0.40
±0.03
0.97REF 1.30
0.508REF
±0.10
2.40
0.96~1.14
0.03~0.10
0.38 REF
+0.05
0.12
–0.023
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A, August 2002
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