Fairchild Semiconductor FJV4110R Datasheet
FJV4110R
FJV4110R
Switching Application
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R=10KΩ)
• Complement to FJV3110R
(Bias Resistor Built In)
Marking
R80
3
1. Base 2. Emitter 3. Collector
Equivalent Circuit
R
B
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage -40 V
Collector-Emitter Voltage -40 V
Emitter-Base Voltage -5 V
Collector Current -100 mA
Collector Power Dissipation 200 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Ta=25°C unless otherwise noted
1
2
SOT-23
C
E
Electrical Characteristics
Symbol Parameter Tes t Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
I
CBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC= -10mA, IB= -1mA -0.3 V
V
CE
C
ob
f
T
R Input Resistor 7 10 13 KΩ
©2002 Fairchild Semiconductor Corporation Rev. A, August 2002
Collector-Base Breakdown Voltage IC= -100µA, IE=0 -40 V
Collector-Emitter Breakdown Voltage IE= -1mA, IB=0 -40 V
Collector Cut-off Current VCB= -30V , IE=0 -0.1 µA
DC Current Gain VCE= -5V, IC= -1mA 100 600
Output Capacitance VCB= -10V , IE=0
Current Gain Bandwidth Product VCE= -10V , IC= -5mA 200 MHz
Ta=25°C unless otherwise noted
5.5 pF
f=1MHz
Typical Characteristics
FJV4110R
10k
1k
, DC CURRENT GAIN
100
FE
h
10
-0.1 -1 -10 -100
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation
280
240
200
160
120
VCE = - 5V
R = 10K
-1000
-100
-10
(sat)[mV], SATURATION VOLTAGE
CE
V
-1
-1 -10 -100 -1000
IC = 10I
B
R = 10k
IC[mA], COLLECTOR CURRENT
80
[mW], POWER DISSIPATION
C
40
P
0
0 255075100125150175
Ta[oC], AMBIENT TEMPERATURE
Figure 3. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. A, August 2002
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