Fairchild Semiconductor FJV3113R Datasheet
FJV3113R
FJV3113R
Switching Application
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R
=2.2KΩ, R2=47KΩ)
1
(Bias Resistor Built In)
3
• Complement to FJV4113R
1. Base 2. Emitter 3. Collector
Marking
R33
Equivalent Circuit
R1
B
R2
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage 50 V
Collector-Emitter Voltage 50 V
Emitter-Base Voltage 10 V
Collector Current 100 mA
Collector Power Dissipation 200 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Ta=25°C unless otherwise noted
1
2
SOT-23
C
E
Electrical Characteristics
Ta=25°C unless otherwise noted
Symbol Parameter Tes t Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
I
CBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC=10mA, IB=0.5mA 0.3 V
V
CE
f
T
C
ob
V
(off) Input Off Voltage VCE=5V, IC=100µA0.5 V
I
(on) Input On Voltage VCE=0.2V, IC=5mA 1.1 V
V
I
R
1
R
1/R2
©2002 Fairchild Semiconductor Corporation Rev. A, August 2002
Collector-Base Breakdown Voltage IC=10µA, IE=0 50 V
Collector-Emitter Breakdown Voltage IC=100µA, IB=0 50 V
Collector Cut-off Current VCB=40V, IE=0 0.1 µA
DC Current Gain VCE=5V, IC=5mA 68
Current Gain Bandwidth Product VCE=10V, IC=5mA 250 MHz
Output Capacitance VCB=10V, IE=0
3.7 pF
f=1.0MHz
Input Resistor 1.5 2.2 2. 9 KΩ
Resistor Ratio 0.042 0.047 0.052
Package Dimensions
0.40
±0.03
FJV3113R
SOT-23
0.20 MIN
0.45~0.60
0.95
2.90
±0.03
1.90
±0.10
0.95
±0.03
±0.03
±0.10
0.40
±0.03
0.97REF 1.30
0.508REF
±0.10
2.40
0.96~1.14
0.03~0.10
0.38 REF
+0.05
0.12
–0.023
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A, August 2002
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