Fairchild Semiconductor FJV3102R Datasheet
FJV3102R
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R
• Complement to FJV4102R
=10KΩ, R2=10KΩ)
1
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
FJV3102R
Equivalent Circuit
R1
B
R2
C
E
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Ta=25°C unless otherwise noted
Marking
R22
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Electrical Characteristics
Collector-Base Voltage 50 V
Collector-Emitter Voltage 50 V
Emitter-Base Voltage 10 V
Collector Current 100 mA
Collector Power Dissipation 200 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Ta=25°C unless otherwise noted
Symbol Parameter Tes t Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
I
CBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC=10mA, IB=0.5mA 0.3 V
V
CE
f
T
C
ob
Collector-Base Breakdown Voltage IC=10µA, IE=0 50 V
Collector-Emitter Breakdown Voltage IC=100µA, IB=0 50 V
Collector Cut-off Current VCB=40V, IE=0 0.1 µA
DC Current Gain VCE=5V, IC=5mA 30
Current Gain Bandwidth Product VCE=10V, IC=5mA 250 MHz
Output Capacitance VCB=10V, IE=0
3.7 pF
f=1.0MHz
V
(off) Input Off Voltage VCE=5V, IC=100µA0.5 V
I
(on) Input On Voltage VCE=0.3V, IC=10mA 3 V
V
I
R
R
1
1/R2
Input Resistor 7 10 13 KΩ
Resistor Ratio 0.9 1 1.1
©2002 Fairchild Semiconductor Corporation Rev. A, July 2002
Typical Characteristics
FJV3102R
1000
100
, DC CURRENT GAIN
FE
h
10
1 10 100 1000
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
1000
100
VCE = 5V
R1 = 10K
R2 = 10K
VCE = 5V
R1 = 10K
R2 = 10K
100
VCE =0.3V
R1 = 10 K
R2 = 10 K
10
1
(on)[V], INPUT VOLTAGE
I
V
0.1
0.1 1 10 100
IC[mA], COLLECTOR CURRENT
Figure 2. Input On Voltage
280
240
200
160
120
A], COLLECTOR CURRENT
µ
[
C
I
10
0.0 0.4 0.8 1.2 1.6 2.0 2.4
VI(off)[V], INPUT OF F VOLTAG E
Figure 3. Input Off Voltage
80
[mW], POW ER DI S SI PA T IO N
C
40
P
0
0255075100125150175
Ta[oC], AMBIENT TEMPERATURE
Figure 4. Power Derat ing
©2002 Fairchild Semiconductor Corporation
Rev. A, July 2002
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