Fairchild Semiconductor FJV1845 Datasheet
FJV1845
Amplifier Transistor
• Complement to FJV992
NPN Epitaxial Silicon Transistor
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
FJV1845
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
I
P
T
T
CBO
CEO
EBO
C
B
C
J
STG
Collector-Base Voltage 120 V
Collector-Emitter Voltage 120 V
Emitter-Base Voltage 5 V
Collector Current 50 mA
Base Current 10 mA
Collector Dissipation 300 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Tes t Condition Min. Typ. Max. Units
I
CBO
I
EBO
h
FE1
h
FE2
(on) Base-Emitter On Voltage VCE=6V, IC=1mA 0.55 0.59 0.65 V
V
BE
(sat) Collector-Emitter Saturation Voltage IC=10mA, IB=1mA 0.07 0.3 V
V
CE
f
T
C
ob
h
FE2
Collector Cut-off Current VCB=120V, IE=0 50 nA
Emitter Cut-off Current VEB=5V, IC=0 50 nA
DC Current Gain VCE=6V, IC=0.1mA
Current Gain Bandwidth Product VCE=6V, IC=1mA 50 110 MHz
Output Capacitance VCB=30V, IE=0, f=1MHz 1.6 2.5 pF
Classification
Classification P F E U
h
FE2
200 ~ 400 300 ~ 600 4 00 ~ 800 600 ~ 1200
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
V
=6V, IC=1mA
CE
150
200
580
600 1200
Marking
6E
hFE Classification
©2002 Fairchild Semiconductor Corporation Rev. B1, August 2002
Typical Characteristics
FJV1845
10
8
6
4
2
[mA], COLLECTOR CURRENT
C
I
0
012345
VCE[V], COLLECTOR-EMITTER VOLTAGE
IB=16µA
IB=14µA
IB=12µA
IB=10µA
IB=8µA
IB=6µA
IB=4µA
IB=2µA
1.0
0.8
0.6
0.4
0.2
[mA], COLLECTOR CURRENT
C
I
0.0
020406080100
IB=1.4µA
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. Static Characteristic
1000
900
800
700
600
500
400
300
, DC CURRENT GAIN
FE
h
200
100
0
0.01 0.1 1 10 100
IC[mA], COLLECTOR CURRENT
100
VCE = 6V
Pule Test
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
0.01
V
0.1 1 10 100
IC[mA], COLLECTOR CURRENT
VBE(sat)
VCE(sat)
IB=1.2µA
IB=1.0µA
IB=0.8µA
IB=0.6µA
IC=10I
Pulse Test
IB=0.4µA
IB=0.2µA
B
Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage
10
1
[pF], CAPACITANCE
ob
C
0.1
1 10 100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation
Collector-Emitter Saturation Voltage
10k
f=1MHz
I
=0
E
1k
[MHz],
T
f
100
10
CURRENT GAIN-BANDWIDTH PRODUCT
0.1 1 10 100
IE[mA], EMITTER CURRENT
VCE=6V
Rev. B1, August 2002
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