Fairchild Semiconductor FJU1615 Datasheet
FJU1615
For Output Amplifier of Electronic Flash Unit
• Low Collector-Emitter Saturation Voltage
• High Performance at Low Supply Voltage
FJU1615
1
I-PACK
1. Base 2. Collector 3. Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage -30 V
Collector-Emitter Voltage -20 V
Emitter-Base Voltage -7 V
Collector Current -10 A
Collector Dissipation 1 W
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Tes t Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
(sat) Collector-Emitter Saturation Voltage IC=-4A, IB=-0.05A -0.17 -0.25 V
V
CE
(sat) Base-Emitter Saturation Voltage IC=-4A, IB=-0.05A -0.9 -1.2 V
V
BE
f
T
C
ob
T
ON
T
STG
T
F
* Pulse Test : PW ≤ 350µs,Duty Cycle ≤ 2%
Collector-Base Breakdown Voltage IC=-100µA, IE=0 -30 V
Collector-Emitter Breakdown Voltage IC=-1mA, IB=0 -20 V
Emitter-Base Breakdown Voltage IC=-100µA, IC=0 -7 V
Collector Cut-off Current VCB=-20V, IE=0 -1.0 µA
Emitter Cut-off Current VEB=-7V, IC=0 -1.0 µA
DC Current Gain VCE=-2V, IC=-0.5A
Current Gain Band Width Product VCE=-5V, IC=-1.5A 180 MHz
Output Capacitance VCB=-10V, IE=0, f=1MHz 220 pF
Turn On Time IC=-5A, IB1=-IB2=-0.125A
Storage Time 300 ns
Fall Time 60 ns
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
V
=-2V, IC=-4A
CE
=2Ω, VCC=-10V
R
L
200
160
600
80 ns
h
Classification
FE1
Classification L K
h
FE1
© 2001 Fairchild Semiconductor Corporation Rev. A. February 2001
200 ~ 400 300 ~ 600
Typical Characteristics
FJU1615
-20
-15
-10
-5
[A], COLLECTOR CURRENT
C
I
-0
-2 -4 -6 -8 -10 -12 -14 -16 -18
VCE[V], COLLECTOR-EMITTER VOLTAGE
Fig. 1 Static Characteristic
1000
100
, DC CURRENT GAIN
FE
h
10
℃
Tc=125
-0.1 -1 -10 -100
℃
75
IC[A], COLLECTOR CURRENT
℃
25
IB=-100mA
IB=-50mA
IB=-20mA
IB=-10mA
VCE=-2.0V
-15
VCE=-2V
℃
Tc=125
℃
-10
-5
[A], COLLECTOR CURRENT
C
I
-0
-0.0 -0.4 -0.8 -1.2
75
℃
25
VBE[V], BASE-EMITTER VOLTAGE
Fig. 2 Transfer Characteristic
-10
-1
-0.1
(sat) [V], SATURATION VOLTAGE
CE
-0.01
V
-0.1 -1 -10 -100
IC/IB=80
IC [A], COLLECTOR CURRENT
IC/IB=40
Fig. 3 DC Current Gain
-10
-1
-0.1
(sat) [V], SATURATION VOLTAGE
BE
V
-0.01
-0.1 -1 -10 -100
IC[A], COLLECTOR CURRENT
Fig. 5 Base-Emitter Saturation Voltage
© 2001 Fairchild Semiconductor Corporation
Fig. 4 Collector-Emitter Saturation Voltage
IC/IB=80
500
400
300
200
[pF], CAPACITANCE
ob
C
100
0
-1 -10 -100
VCB[V], COLLECTOR-BASE VOLTAGE
VCB=-10V, IE=0
f=1MHz
Fig. 6 Output Capacitance
Rev. A. February 2001
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